IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0461844
(2003-06-12)
|
발명자
/ 주소 |
- Tse, Lawrence T.
- Davis, Michael A.
- Stratakos, Anthony J.
|
출원인 / 주소 |
- Volterra Semiconductor, Inc.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
2 |
초록
▼
A switching regulator that has first, second, third and fourth terminals, a first power transistor disposed between the first terminal and a first node, a second power transistor disposed between the first node and a second node, a filter including a capacitor and an inductor, and a controller. The
A switching regulator that has first, second, third and fourth terminals, a first power transistor disposed between the first terminal and a first node, a second power transistor disposed between the first node and a second node, a filter including a capacitor and an inductor, and a controller. The first power transistor is partitioned into a plurality of individually-addressable first transistor segments. The second node couples the second and fourth terminals. The second power transistor is partitioned into a plurality of individually-addressable second transistor segments. The inductor is disposed between the first node and the third terminal, and the capacitor is disposed between the third and fourth terminals. The controller is operable in a plurality of modes including a normal mode in which the controller opens and closes all of the first transistor segments and all of the second transistor segments, and a test mode in which the controller opens and closes less than all of the first transistor segments and all of the second transistor segments.
대표청구항
▼
1. A switching regulator having first, second, third and fourth terminals, comprising:a first power transistor disposed between the first terminal and a first node, the first power transistor being partitioned into a plurality of individually-addressable first transistor segments;a second power tran
1. A switching regulator having first, second, third and fourth terminals, comprising:a first power transistor disposed between the first terminal and a first node, the first power transistor being partitioned into a plurality of individually-addressable first transistor segments;a second power transistor disposed between the first node and a second node, the second node coupling the second and fourth terminals, the second power transistor being partitioned into a plurality of individually-addressable second transistor segments;a filter including a capacitor and an inductor, the inductor being disposed between the first node and the third terminal, and the capacitor being disposed between the third and fourth terminals; anda controller operable in a plurality of modes includinga normal mode in which the controller opens and closes all of the first transistor segments and all of the second transistor segments; anda test mode in which the controller opens and closes less than all of the first transistor segments and all of the second transistor segments. 2. The switching regulator of claim 1, wherein each first transistor segment has a source coupled to the first terminal, a drain coupled to the first node and a gate coupled to the controller through a segment control line. 3. The switching regulator of claim 1, wherein each second transistor segment has a source coupled to the first node, a drain coupled to the second node and a gate coupled to the controller through a segment control line. 4. The switching regulator of claim 1, wherein the controller operates in the normal mode in response to a substantially constant load. 5. The switching regulator of claim 4, wherein the controller is configured to switch to the test mode in response to a request to measure an on-resistance of a power transistor. 6. The switching regulator of claim 1, wherein the first power transistor is a p-channel MOSFET and the second power transistor is a n-channel MOSFET. 7. The switching regulator of claim 1, wherein all the second transistor segments have an equivalent transistor width. 8. The switching regulator of claim 1, wherein the test mode is a test mode in which the controller closes each of the first or second transistor segments one at a time to measure an on-resistance of the closed segment. 9. The switching regulator of claim 1, wherein each of the first transistor segments or second transistor segments includes one or more single transistors connected in parallel. 10. A method for measuring an on-resistance of a power transistor integrated onto an integrated circuit chip, comprising:providing a power transistor including a plurality of individually-addressable transistor segments;closing less than all of the transistor segments;measuring an on-resistance of the closed transistor segments; andderiving an on-resistance of the power transistor from the on-resistances of the transistor segments. 11. The method of claim 10, wherein each transistor segment includes one or more single transistors connected in parallel. 12. A switching regulator having first, second, third and fourth terminals, comprising:a first power transistor disposed between the first terminal and a first node, the first power transistor being partitioned into a plurality of individually-addressable first transistor segments;a second power transistor disposed between the first node and a second node, the second node coupling the second and fourth terminals, the second power transistor being partitioned into a plurality of individually-addressable second transistor segments;a filter including a capacitor and an inductor, the inductor being disposed between the first node and the third terminal, and the capacitor being disposed between the third and fourth terminals; anda controller operable in a plurality of modes includinga normal mode in which the controller opens and closes all of the first transistor segments and all of the second transistor segments; anda test mode in which the controller opens and closes less than all of the first transistor segments and all of the second transistor segments,wherein:the transistor segments are closed one at a time;an on-resistance of each closed transistor segment is measured; andan on-resistance of the power transistor is derived by averaging the on-resistances of all of the transistor segments. 13. A switching regulator having first, second, third and fourth terminals, comprising:a first power transistor disposed between the first terminal and a first node, the first power transistor being partitioned into a plurality of individually-addressable first transistor segments;a second power transistor disposed between the first node and a second node, the second node coupling the second and fourth terminals, the second power transistor being partitioned into a plurality of individually-addressable second transistor segments;a filter including a capacitor and an inductor, the inductor being disposed between the first node and the third terminal, and the capacitor being disposed between the third and fourth terminals; anda controller operable in a plurality of modes includinga normal mode in which the controller opens and closes all of the first transistor segments and all of the second transistor segments; anda test mode in which the controller opens and closes less than all of the first transistor segments and all of the second transistor segments,wherein the transistor segments have an equivalent width. 14. The switching regulator of claim 5, wherein a total number of transistor segments associated with the power transistor can be pre-selected to achieve a desired measurement accuracy of the on-resistance of the power transistor. 15. A method for measuring an on-resistance of a power transistor integrated onto an integrated circuit chip, comprising:providing a power transistor including a plurality of individually-addressable transistor segments;closing less than all of the transistor segments;measuring an on-resistance of the closed transistor segments;deriving an on-resistance of the power transistor from the on-resistances of the transistor segments;providing a test board including circuitry that includes a first capacitor with a first capacitance and a first inductor with a first inductance;increasing the first inductance relative to a second inductance of a corresponding second inductor on an application board designed for use with the power transistor;reducing the first capacitance relative to a second capacitance of a corresponding second capacitor on the application board; andmeasuring the on-resistance of the closed transistor segments with a reduced load current. 16. The method of claim 15, wherein the first inductance has a value that is equal to the second inductance multiplied by the number of the transistor segments. 17. The method of claim 15, wherein the first capacitance has a value that is equal to the second capacitance divided by the number of the transistor segments.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.