Use of slurry waste composition to determine the amount of metal removed during chemical mechanical polishing, and system for accomplishing same
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/66
H01L-021/302
출원번호
US-0909112
(2001-07-19)
발명자
/ 주소
Oey Hewett, Joyce S.
Pasadyn, Alexander J.
출원인 / 주소
Advanced Micro Devices, Inc.
대리인 / 주소
Williams, Morgan & Amerson, P.C.
인용정보
피인용 횟수 :
0인용 특허 :
4
초록▼
In general, the present invention is directed to a method of using slurry waste composition to determine the amount of metal removed during chemical mechanical polishing processes, and a system for accomplishing same. In one embodiment, the method comprises providing a substrate having a metal layer
In general, the present invention is directed to a method of using slurry waste composition to determine the amount of metal removed during chemical mechanical polishing processes, and a system for accomplishing same. In one embodiment, the method comprises providing a substrate having a metal layer formed thereabove, performing a chemical mechanical polishing process on the layer of metal in the presence of a polishing slurry, measuring at least a concentration of a material comprising the metal layer in the polishing slurry used during said polishing process after at least some of said polishing process has been performed, and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the metal layer. In another embodiment, the present invention is directed to a system that is comprised of a chemical mechanical polishing tool for performing a chemical mechanical polishing process on a metal layer in the presence of a polishing slurry, a concentration monitor for measuring a concentration of a material comprising the metal layer in the polishing slurry after at least one of the polishing process has been performed, and a controller for receiving the measured concentration and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the layer of metal.
대표청구항▼
1. A method, comprising:providing a substrate having a metal layer comprised of copper formed thereabove;performing a chemical mechanical polishing process on said layer of metal in the presence of a polishing slurry;measuring at least a concentration of copper in said polishing slurry used during s
1. A method, comprising:providing a substrate having a metal layer comprised of copper formed thereabove;performing a chemical mechanical polishing process on said layer of metal in the presence of a polishing slurry;measuring at least a concentration of copper in said polishing slurry used during said polishing process after at least some of said polishing process has been performed, wherein said polishing slurry used during said polishing process is collected in a waste slurry reservoir, and said step of measuring at least a concentration of copper is performed on said slurry in said waste slurry reservoir; anddetermining a thickness of said layer of metal removed during said polishing process based upon at least said measured concentration of copper. 2. The method of claim 1, further comprising adjusting at least one parameter of said polishing process based upon said calculated thickness of said layer of metal removed during said polishing process. 3. The method of claim 1, further comprising measuring a volume of said polishing slurry used during said polishing process. 4. The method of claim 3, further comprising calculating a thickness of said layer of metal removed during said polishing process based upon at least the measured volume of said polishing slurry used during said polishing operation. 5. The method of claim 3, further comprising calculating a thickness of said layer of metal removed during said polishing process based upon at least the measured volume of said polishing slurry used during said polishing operation and said measured concentration of said copper. 6. The method of claim 1, wherein measuring a concentration of copper comprises measuring a concentration of copper using a concentration monitor. 7. The method of claim 3, wherein measuring a volume of said polishing slurry used during said polishing process comprises measuring a volume of said polishing slurry used during said polishing process using a volumetric meter. 8. The method of claim 1, wherein said step of determining a thickness of said layer of metal removed during said polishing process comprises accessing a model comprised of data correlating said measured concentration of said material comprising said layer of metal and a thickness of a layer of material comprised of the same material as said layer of metal. 9. The method of claim 1, wherein said step of determining a thickness of said layer of metal removed during said polishing process comprises calculating a thickness of said layer of metal removed during said polishing process based upon at least said measured concentration. 10. A method, comprising:providing a substrate having a metal layer comprised of copper formed thereabove;performing a chemical mechanical polishing process on said layer of metal in the presence of a polishing slurry;measuring at least a concentration of copper in said polishing slurry used during said polishing process after at least some of said polishing process has been performed, wherein said polishing slurry used during said polishing process is collected in a waste slurry reservoir, and said step of measuring at least a concentration of copper is performed on said slurry in said waste slurry reservoir; andcalculating a thickness of said layer of metal removed during said polishing process based upon at least said measured concentration of copper. 11. The method of claim 10, further comprising adjusting at least one parameter of said polishing process based upon said calculated thickness of said layer of metal removed during said polishing process. 12. The method of claim 10, further comprising measuring a volume of said polishing slurry used during said polishing process. 13. The method of claim 12, further comprising calculating a thickness of said layer of metal removed during said polishing process based upon at least the measured volume of said polishing slurry used during said polishing operation. 14. The method of claim 12, further comprising calc ulating a thickness of said layer of metal removed during said polishing process based upon at least the measured volume of said polishing slurry used during said polishing operation and said measured concentration of copper. 15. The method of claim 10, wherein measuring a concentration of copper comprises measuring a concentration of copper using a concentration monitor. 16. The method of claim 12, wherein measuring a volume of said polishing slurry used during said polishing process comprises measuring a volume of said polishing slurry used during said polishing process using a volumetric meter. 17. A method, comprising:providing a substrate having a metal layer comprised of copper formed thereabove;performing a chemical mechanical polishing process on said layer of metal in the presence of a polishing slurry;measuring at least a concentration of copper in said polishing slurry used during said polishing process after at least some of said polishing process has been performed, wherein said polishing slurry used during said polishing process is collected in a waste slurry reservoir, and said step of measuring at least a concentration of copper is performed on said slurry in said waste slurry reservoir; anddetermining a thickness of said layer of metal removed during said polishing process by accessing a model comprised of data correlating said measured concentration of copper and a thickness of a layer of copper. 18. The method of claim 17, further comprising adjusting at least one parameter of said polishing process based upon said determined thickness of said layer of metal removed during said polishing process. 19. The method of claim 17, wherein measuring a concentration of copper comprises measuring a concentration of copper using a concentration monitor. 20. A method, comprising:providing a substrate having a metal layer comprised of copper formed thereabove;performing a chemical mechanical polishing process on said layer of metal in the presence of a polishing slurry;measuring a volume of said polishing slurry used during said polishing process after at least some of said polishing process has been performed;measuring a concentration of copper in said measured volume of polishing slurry, wherein said polishing slurry used during said polishing process is collected in a waste slurry reservoir, and said step of measuring at least a concentration of copper and said step of measuring a volume of said polishing slurry is performed on said slurry in said waste slurry reservoir; andcalculating a thickness of said layer of metal removed during said polishing process based upon at least said measured volume of polishing slurry and said measured concentration of copper. 21. The method of claim 20, further comprising adjusting at least one parameter of said polishing process based upon said calculated thickness of said layer of metal removed during said polishing process. 22. The method of claim 20, wherein measuring a volume of polishing slurry used during said polishing process comprises collecting said polishing slurry used during said polishing process in a reservoir having a known value. 23. The method of claim 20, wherein measuring a concentration of copper comprises measuring a concentration of copper using a concentration monitor. 24. The method of claim 20, wherein measuring a volume of said polishing slurry used during said polishing process comprises measuring a volume of said polishing slurry used during said polishing process using a volumetric meter.
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이 특허에 인용된 특허 (4)
Yu Chris C. (Austin TX) Yu Tat-Kwan (Austin TX) Klein Jeffrey L. (Austin TX), Acoustically regulated polishing process.
Miller Matthew Kilpatrick ; Morgan Clifford Owen ; Rutten Matthew Jeremy ; Walton Erick G. ; Wright Terrance Monte, Polishing pad with controlled release of desired micro-encapsulated polishing agents.
Murarka Shyam P. (Clifton Park NY) Gutmann Ronald J. (Troy NY) Duquette David J. (Loudonville NY) Steigerwald Joseph M. (Aloha OR), Systems for performing chemical mechanical planarization and process for conducting same.
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