Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
H01L-021/48
H01L-021/50
출원번호
US-0353752
(2003-01-28)
발명자
/ 주소
Farnworth, Warren M.
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
TraskBritt
인용정보
피인용 횟수 :
4인용 특허 :
63
초록▼
A stereolithographically fabricated, substantially hermetic package surrounds at least a portion of a semiconductor die so as to substantially hermetically seal the same. Stereolithographic processes may be used to fabricate at least a portion of the substantially hermetic package from thermoplastic
A stereolithographically fabricated, substantially hermetic package surrounds at least a portion of a semiconductor die so as to substantially hermetically seal the same. Stereolithographic processes may be used to fabricate at least a portion of the substantially hermetic package from thermoplastic glass, other types of glass, ceramics, or metals. The substantially hermetic package may be used with semiconductor device assemblies or with bare or minimally packaged semiconductor dice, including dice that have yet to be singulated from a wafer. The stereolithographic method may include use of a machine vision system including at least one camera operably associated with a computer controlling a stereolithographic application of material so that the system may recognize the position, orientation, and features of a semiconductor device assembly, semiconductor die, or other substrate on which the substantially hermetic package is to be fabricated.
대표청구항▼
1. A method for fabricating a substantially hermetic package for a semiconductor device, comprising:providing a first layer of substantially hermetic packaging material;defining at least boundaries of a corresponding, first layer of the substantially hermetic package in said first layer;superimposin
1. A method for fabricating a substantially hermetic package for a semiconductor device, comprising:providing a first layer of substantially hermetic packaging material;defining at least boundaries of a corresponding, first layer of the substantially hermetic package in said first layer;superimposing an additional layer of substantially hermetic packaging material over said first layer;defining at least boundaries of a corresponding, additional layer of the substantially hermetic package in said additional layer; andsecuring said additional layer to said first layer. 2. The method of claim 1, wherein said providing said first layer comprises providing a sheet of substantially hermetic packaging material. 3. The method of claim 2, wherein said providing said sheet comprises providing a sheet comprising thermoplastic glass. 4. The method of claim 2, wherein said defining at least boundaries of said corresponding, first layer comprises employing a laser to define at least boundaries of said corresponding, first layer of the substantially hermetic package. 5. The method of claim 1, wherein said superimposing said additional layer comprises superimposing a sheet of substantially hermetic packaging material over said first layer. 6. The method of claim 5, wherein said superimposing said additional layer comprises superimposing a sheet comprising thermoplastic glass over said first layer. 7. The method of claim 5, wherein said defining at least boundaries of said corresponding, additional layer comprises employing a laser to define at least boundaries of said additional layer of the substantially hermetic package. 8. The method of claim 1, wherein said superimposing is effected prior to said defining at least boundaries of said corresponding, additional layer. 9. The method of claim 1, wherein said securing is effected prior to said defining at least boundaries of said corresponding, additional layer. 10. The method of claim 1, wherein said providing said first layer comprises providing a layer comprising substantially unconsolidated hermetic packaging material. 11. The method of claim 10, wherein said defining at least boundaries of said corresponding, first layer of the substantially hermetic package includes selectively consolidating regions of said first layer at said boundaries. 12. The method of claim 11, wherein said defining at least boundaries of said corresponding, first layer of the substantially hermetic package further includes selectively consolidating regions of said first layer confined within said boundaries. 13. The method of claim 10, wherein said superimposing said additional layer comprises forming said additional layer from substantially unconsolidated packaging material. 14. The method of claim 13, wherein said defining at least boundaries of said corresponding, additional layer of the substantially hermetic package includes selectively consolidating regions of said additional layer at said boundaries. 15. The method of claim 14, wherein said defining at least boundaries of said corresponding, additional layer of the substantially hermetic package further includes selectively consolidating regions of said additional layer confined within said boundaries. 16. The method of claim 1, further comprising:repeating said superimposing and said defining at least boundaries of said corresponding, additional layer at least once. 17. A method for fabricating a substantially hermetic package for a semiconductor device, comprising:forming a first layer of the substantially hermetic package;forming at least one additional layer of the substantially hermetic package;superimposing said at least one additional layer over said first layer; andsecuring said at least one additional layer to said first layer. 18. The method of claim 17, wherein at least one of said forming said first layer and said forming said at least one additional layer comprises forming a layer of the substantially hermetic package from a preformed sheet of s ubstantially hermetic packaging material. 19. The method of claim 17, wherein at least one of said forming said first layer and said forming said at least one additional layer comprises:forming a layer comprising substantially unconsolidated hermetic packaging material; andselectively consolidating regions of said layer. 20. The method of claim 19, wherein said superimposing is effected concurrently with said forming said layer. 21. The method of claim 19, wherein said securing is effected concurrently with said selectively consolidating.
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Farnworth, Warren M., Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages.
Farnworth, Warren M., Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages.
Warren M. Farnworth, Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages.
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Akram,Salman, Semiconductor devices having stereolithographically fabricated protective layers thereon through which contact pads are exposed and assemblies including the same.
Farnworth, Warren M., Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages.
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