Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0042060
(2002-01-07)
|
우선권정보 |
DE-0031333 (1999-07-07) |
발명자
/ 주소 |
- Kuhn, Harald
- Stein, Rene
- Voelkl, Johannes
|
출원인 / 주소 |
- Siemens Aktiengesellschaft
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
6 인용 특허 :
3 |
초록
▼
A method for the sublimation growth of an SiC single crystal, involving heating up under growth pressure, is described. In the method for the sublimation growth of the SiC single crystal, a crucible holding a stock of solid SiC and an SiC seed crystal, onto which the SiC single crystal grows, is eva
A method for the sublimation growth of an SiC single crystal, involving heating up under growth pressure, is described. In the method for the sublimation growth of the SiC single crystal, a crucible holding a stock of solid SiC and an SiC seed crystal, onto which the SiC single crystal grows, is evacuated during a starting phase which precedes the actual growth phase and is then filled with an inert gas, until a growth pressure is reached in the crucible. Moreover, the crucible is initially heated to an intermediate temperature and then, in a heat-up phase, is heated to a growth temperature at a heat-up rate of at most 20° C./min. As a result, controlled seeding on the SiC seed crystal is achieved even during the heat-up phase.
대표청구항
▼
1. A method for a sublimation growth of at least one SiC single crystal, which comprise the steps of:introducing a stock of solid SiC into a storage area of a crucible;introducing at least one SiC seed crystal into at least one crystal area of the crucible;bringing the crucible to growth conditions
1. A method for a sublimation growth of at least one SiC single crystal, which comprise the steps of:introducing a stock of solid SiC into a storage area of a crucible;introducing at least one SiC seed crystal into at least one crystal area of the crucible;bringing the crucible to growth conditions during a starting phase;initially evacuating the crucible, and then filling the crucible with an inert gas, until a growth pressure is reached in the crucible, during the starting phase;during the starting phase, initially heating the crucible to an intermediate temperature and then, in a heat-up phase, starting from the intermediate temperature, heating the crucible to a growth temperature at a heating rate of at most 20° C./min; andgrowing the SiC single crystal, during a growth phase, by the stock of solid SiC being at least partially sublimed and converted into an SiC gas phase with SiC gas-phase components and the SiC gas-phase components being at least partially transported to the SiC seed crystal, where the SiC gas-phase components are deposited for growing the SiC single crystal. 2. The method according to claim 1, which comprises during the starting phase, a minimum concentration of the SiC gas-phase components, above which crystal growth on the SiC seed crystal begins, is established in the SiC gas phase prevailing at the SiC seed crystal. 3. The method according to claim 1, which comprises during the heat-up phase, a temperature gradient of at most 20° C./cm is established between the storage area and the SiC seed crystal. 4. The method according to claim 1, which comprises starting from an initial level, the heat-up rate during the heat-up phase is reduced to a level of at most 10° C./min. 5. The method according to claim 4, which comprises during the heat-up phase the heat-up rate is reduced in steps starting from the initial level. 6. The method according to claim 1, which comprises filling the crucible, after the evacuating step, with at least one inert gas selected from the group consisting of argon, helium and hydrogen. 7. The method according to claim 1, which comprises setting the growth pressure to a value of between 1 and 20 mbar. 8. The method according to claim 1, which comprises setting the growth temperature to a value of between 2100° C. and 2300° C. 9. The method according to claim 1, which comprises during the starting phase the crucible is heated to the intermediate temperature of between 1000° C. and 1400° C.
이 특허에 인용된 특허 (3)
-
Barrett Donovan L. ; Thomas Richard N. ; Seidensticker ; deceased Raymond G. ; Hopkins Richard H., Method of producing large diameter silicon carbide crystals.
-
Kitoh Yasuo,JPX ; Suzuki Masahiko,JPX ; Sugiyama Naohiro,JPX, Process for growing single crystal.
-
Takahaski Jun (Sagamihara JPX) Kanaya Masatoshi (Sagamihara JPX), Sublimation growth of single crystal SiC.
이 특허를 인용한 특허 (6)
-
Fujiwara, Shinsuke; Nishiguchi, Taro; Hori, Tsutomu; Ooi, Naoki; Ueta, Shunsaku, Method of manufacturing silicon carbide substrate.
-
Straubinger, Thomas; Vogel, Michael; Wohlfart, Andreas, Monocrystalline SiC substrate with a non-homogeneous lattice plane course.
-
Straubinger, Thomas; Vogel, Michael; Wohlfart, Andreas, Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution.
-
Straubinger, Thomas; Vogel, Michael; Wohlfart, Andreas, Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course.
-
Straubinger, Thomas; Vogel, Michael; Wohlfart, Andreas, Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course.
-
Gupta, Avinash; Chakrabarti, Utpal K.; Chen, Jihong; Semenas, Edward; Wu, Ping, SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.