[특허]Photocatalytic reactor system for treating flue effluents

Photocatalytic reactor system for treating flue effluents 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	B01J-019/08 B01J-019/12
출원번호	US-0041519 (2002-01-08)
발명자 / 주소	Elliott, David J. Thompson, Allan R. Whitten, George D. Camp, Jonathan C. Krajewski, Mark T.
출원인 / 주소	UVTech Systems, Inc.
대리인 / 주소	Iandiorio & Teska
인용정보	피인용 횟수 : 0 인용 특허 : 115

초록 ▼

A photocatalytic reactor system consisting of a photonic energy source to remove undesirable contaminants from an effluent stream. The device includes a photonic energy source, a beam delivery system, and a reaction chamber into which the photonic energy is transmitted. The contaminated effluent flo

대표청구항 ▼

1. A photocatalytic reactor system for treating flue effluents containing at least one contaminant comprising:at least one reactor vessel;an effluent inlet connected to the reactor vessel for receiving an effluent stream;at least one photonic energy source coupled to the reactor vessel for introducing photonic energy into the effluent stream, said photonic energy source being a laser; andan effluent outlet connected to the reactor vessel for discharging a treated effluent stream,wherein the photonic energy catalyzes a reaction in the effluent stream to reduce contaminant emissions. 2. The photocatalytic reactor system of claim 1 in which said photonic energy source includes an ultraviolet (UV) energy source. 3. The photocatalytic reactor system of claim 1 further comprising a plurality of reactor vessels connected in parallel with each other to react with a greater flow of the effluent stream. 4. The photocatalytic reactor system of claim 1 further comprising a plurality of reactor vessels connected in series to react with a greater flow of the effluent stream. 5. The photocatalytic reactor system of claim 1 further comprising a plurality of reactor vessels connected in a matrix of series and parallel configurations. 6. The photocatalytic reactor system of claim 1 in which the reactor vessel is cylindrical. 7. The photocatalytic reactor system of claim 1 in which said reactor vessel is spherical. 8. The photocatalytic reactor system of claim 1 in which said reactor vessel is quadrangular. 9. The photocatalytic reactor system of claim 1 in which the contaminant in the effluent stream is sulfur dioxide. 10. The photocatalytic reactor system of claim 9 in which the sulfur dioxide is converted to sulfur trioxide by the photonic energy. 11. The photocatalytic reactor system of claim 1 further comprising a reactant inlet connected to the reactor vessel for injecting at least one reactant into the reactor vessel. 12. The photocatalytic reactor system of claim 11 wherein said reactant is an inert gas. 13. The photocatalytic reactor system of claim 11 wherein said reactant is an inert chemical or chemical mixture. 14. The photocatalytic reactor system of claim 11 wherein said reactant is a reactive gas. 15. The photocatalytic reactor system of claim 11 wherein said reactant is a reactive chemical or chemical mixture. 16. The photocatalytic reactor system of claim 11 wherein said reactant accelerates the conversion of sulfur dioxide to sulfur trioxide. 17. The photocatalytic reactor system of claim 1 further comprising a plurality of photonic energy sources connected to said reactor vessel for increasing the amount of photonic energy introduced into the effluent stream. 18. An ultraviolet catalytic reactor system for treating an effluent stream containing at least one contaminant comprising:at least one reactor vessel;an effluent inlet connected to the reactor vessel for receiving the effluent stream;at least one ultraviolet energy source coupled to the reactor vessel for introducing ultraviolet energy into the effluent stream, said ultraviolet energy source being a laser; andan effluent outlet connected to the reactor vessel for discharging a treated effluent stream,wherein the ultraviolet energy catalyzes a reaction in the effluent stream to reduce contaminant emissions. 19. The ultraviolet catalytic reactor system of claim 18 further comprising a plurality of reactor vessels connected in parallel with each other to react with a greater flow of the effluent stream. 20. The ultraviolet catalytic reactor system of claim 18 further comprising a plurality of reactor vessels connected in series to react with a greater flow of the effluent stream. 21. The ultraviolet catalytic reactor system of claim 18 further comprising a plurality of reactor vessels connected in a matrix of series and parallel configurations. 22. The ultraviolet catalytic reactor system of claim 18 in which said reactor vessel is cylindrical. 23. The ultraviolet catalyt ic reactor system of claim 18 in which said reactor vessel is spherical. 24. The ultraviolet catalytic reactor system of claim 18 in which said reactor vessel is quadrangular. 25. The ultraviolet catalytic reactor system of claim 18 in which the contaminant in the effluent stream is sulfur dioxide. 26. The ultraviolet catalytic reactor system of claim 25 which the sulfur dioxide is converted to sulfur trioxide by the ultraviolet energy. 27. The ultraviolet catalytic reactor system of claim 18 further comprising a reactant inlet connected to said reactor vessel for injecting a reactant into the reactor vessel. 28. The ultraviolet catalytic reactor system of claim 27 wherein said reactant is an inert gas. 29. The ultraviolet catalytic reactor system of claim 27 wherein said reactant is an inert chemical or chemical mixture. 30. The ultraviolet catalytic reactor system of claim 27 wherein said reactant is a reactive gas. 31. The ultraviolet catalytic reactor system of claim 27 wherein said reactant is a reactive chemical or chemical mixture. 32. The ultraviolet catalytic reactor system of claim 27 wherein said reactant accelerates the conversion of sulfur dioxide to sulfur trioxide. 33. The ultraviolet catalytic reactor system of claim 18 further comprising a plurality of ultraviolet energy sources connected to said reactor vessel for increasing the amount of ultraviolet energy introduced into the effluent stream. 34. An ultraviolet catalytic reactor system for treating an effluent stream containing at least one contaminant comprising:at least one reaction chamber including an annular ring including a first opening for receiving an effluent stream and a second opening for discharging a treated effluent stream;a plurality of ultraviolet energy inlets in the annular ring for introducing ultraviolet energy into the effluent stream; andat least one ultraviolet energy source connected to the plurality of ultraviolet energy inlets,wherein the ultraviolet energy catalyzes a reaction in the effluent stream to reduce contaminant emissions. 35. The ultraviolet catalytic reactor system of claim 34 wherein said at least one ultraviolet energy source is connected to said plurality of ultraviolet energy inlets by a plurality of optical fibers. 36. The ultraviolet catalytic reactor system of claim 34 wherein said annular ring includes a plurality of injection nozzles for injecting a reactant into said reaction chamber. 37. The ultraviolet catalytic reactor system of claim 36 wherein said plurality of injection nozzles is connected to a manifold for delivery of said reactant. 38. The ultraviolet catalytic reactor system of claim 36 wherein said reactant is an inert gas. 39. The ultraviolet reactor system of claim 36 wherein said reactant is an inert chemical or chemical mixture. 40. The ultraviolet catalytic reactor system of claim 36 wherein said reactant is a reactive gas. 41. The ultraviolet catalytic reactor system of claim 36 wherein said reactant is a reactive chemical or chemical mixture. 42. The ultraviolet catalytic reactor system of claim 36 wherein said reactant accelerates the conversion of sulfur dioxide to sulfur trioxide. 43. The ultraviolet catalytic reactor system of claim 34 wherein the contaminant is sulfur dioxide. 44. The ultraviolet catalytic reactor system of claim 34 wherein said ultraviolet energy source is a laser. 45. The ultraviolet catalytic reactor system of claim 34 wherein said ultraviolet energy source is a lamp. 46. A photocatalytic reactor system for treating flue effluents containing at least one contaminant comprising:a plurality of reactor vessels connected in parallel with each other;an effluent inlet connected to the plurality of reactor vessels for receiving an effluent stream;at least one photonic energy source coupled to the plurality of reactor vessels for introducing photonic energy into the effluent stream; andan effluent outlet connected to the plurality of reactor vessels for discharging a treated effluent stream,wherein the photonic energy catalyzes a reaction in the effluent stream to reduce contaminant emissions. 47. A photocatalytic reactor system for treating flue effluents containing at least one contaminant comprising:a plurality of reactor vessels connected in a matrix of series and parallel configurations;an effluent inlet connected to the plurality of reactor vessels for receiving an effluent stream;at least one photonic energy source coupled to the plurality of reactor vessels for introducing photonic energy into the effluent stream; andan effluent outlet connected to the plurality of reactor vessels for discharging a treated effluent stream,wherein the photonic energy catalyzes a reaction in the effluent stream to reduce contaminant emissions. 48. A photocatalytic reactor system for treating flue effluents containing at least one contaminant comprising:at least one reactor vessel;an effluent inlet connected to the reactor vessel for receiving an effluent stream;at least one photonic energy source coupled to the reactor vessel for introducing photonic energy into the effluent stream;an effluent outlet connected to the reactor vessel for discharging a treated effluent stream; anda reactant inlet connected to the reactor vessel for injecting at least one reactant into the reactor vessel;wherein the photonic energy catalyzes a reaction in the effluent stream to reduce contaminant emissions. 49. An ultraviolet catalytic reactor system for treating an effluent stream containing at least one contaminant comprising:a plurality of reactor vessels connected in parallel with each other;an effluent inlet connected to the plurality of reactor vessels for receiving the effluent stream;at least one ultraviolet energy source coupled to the plurality of reactor vessels for introducing ultraviolet energy into the effluent stream; andan effluent outlet connected to the plurality of reactor vessels for discharging a treated effluent stream,wherein the ultraviolet energy catalyzes a reaction in the effluent stream to reduce contaminant emissions. 50. An ultraviolet catalytic reactor system for treating an effluent stream containing at least one contaminant comprising:a plurality of reactor vessels connected in a matrix of series and parallel configurations;an effluent inlet connected to the plurality of reactor vessels for receiving the effluent stream;at least one ultraviolet energy source coupled to the plurality of reactor vessels for introducing ultraviolet energy into the effluent stream; andan effluent outlet connected to the plurality of reactor vessels for discharging a treated effluent stream,wherein the ultraviolet energy catalyzes a reaction in the effluent stream to reduce contaminant emissions. 51. An ultraviolet catalytic reactor system for treating an effluent stream containing at least one contaminant comprising:at least one reactor vessel;an effluent inlet connected to the reactor vessel for receiving the effluent stream;at least one ultraviolet energy source coupled to the reactor vessel for introducing ultraviolet energy into the effluent stream;an effluent outlet connected to the reactor vessel for discharging a treated effluent stream; anda reactant inlet connected to said reactor vessel for injecting a reactant into thereactor vessel;wherein the ultraviolet energy catalyzes a reaction in the effluent stream to reduce contaminant emissions.

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Nishiki Akihiko,JPX, Alignment method and system for use in manufacturing an optical filter.
상세보기
Tabatabaie-Raissi Ali ; Muradov Nazim Z. ; Peng Peter H., Apparatus and method for photocatalytic conditioning of flue gas fly-ash particles.
상세보기
Savas Stephen E., Apparatus and method for pulsed plasma processing of a semiconductor substrate.
상세보기
Dong Junchang (Brookline MA) Berman Elliot (Quincy MA), Apparatus and method for the photopromoted catalyzed degradation of compounds in a fluid stream.
상세보기
Harada Koji,JPX, Apparatus for eliminating impurities by ozone generated in space above substrate surface and film forming method and system therewith.
상세보기
Peter W. Lee ; Stuardo Robles ; Anand Gupta ; Virendra V. S. Rana ; Amrita Verma, Apparatus for improving film stability of halogen-doped silicon oxide films.
상세보기
Hiatt C. Fred (Burnsville MN) Gray David C. (Sunnyvale CA) Butterbaugh Jeffery W. (Chanhassen MN), Apparatus for surface conditioning.
상세보기
Boitnott Charles A. ; Shepherd ; Jr. Robert A., Backside etch process chamber and method.
상세보기
Mountsier Thomas Weller, Chemical vapor deposition of low density silicon dioxide films.
상세보기
Monkowski Joseph R. (Carlsbad CA) Logan Mark A. (Carlsbad CA), Chemical vapor deposition reactor and method of use thereof.
상세보기
Trussell David ; Koemtzopoulos C. Robert ; Kozakevich Felix, Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports.
상세보기
Denison Dean R. ; Pirkle David R. ; Harrus Alain, Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing s.
상세보기
Grant Robert W. (Excelsior MN) Novak Richard E. (Plymouth MN), Cluster tool dry cleaning system.
상세보기
Uzoh Cyprian E., Continuous highly conductive metal wiring structures and method for fabricating the same.
상세보기
Miller Kenneth C. (Mountain View CA) Broadbent Eliot K. (San Jose CA), Cooling method and apparatus for magnetron sputtering.
상세보기
Kaschmitter James L. (Pleasanton CA) Truher Joel B. (Palo Alto CA) Weiner Kurt H. (Campbell CA) Sigmon Thomas W. (Beaverton OR), Crystallization and doping of amorphous silicon on low temperature plastic.
상세보기
Elliott David J. (Wayland MA) Shafer David (Fairfield CT), Deep ultraviolet microlithography system.
상세보기
Elliott David J. (Wayland MA) Hollman Richard F. (Chelmsford MA) Shafer David (Fairfield CT), Deep ultraviolet optical imaging system for microlithography and/or microfabrication.
상세보기
Chen Liang-Yuh ; Tao Rong ; Guo Ted ; Mosely Roderick Craig, Dual damascene metallization.
상세보기
Dubin Valery M. ; Shacham-Diamand Yosef ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K., Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications.
상세보기
Wu Chung P. (Mercerville NJ), Electromagnetic radiation annealing of semiconductor material.
상세보기
Syverson Daniel J. (Robbinsdale MN) Novak Richard E. (Plymouth MN) Haak Eugene L. (Plymouth MN), Etch chamber with gas dispersing membrane.
상세보기
Hinke Joseph,CAX ; Hinke Thomas V.,CAX, Flue gas scrubbing and waste heat recovery system.
상세보기
McMillin Brian ; Nguyen Huong ; Barnes Michael ; Ni Tom, Gas injection system for plasma processing.
상세보기
van de Ven Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA) Benzing Jeffrey C. (San Jose CA) Chin Barry L. (Sunnyvale CA) Burkhart Christopher W. (San Jose CA), Gas-based substrate protection during processing.
상세보기
Reif L. Rafael (Newton MA) Fonstad ; Jr. Clifton G. (Arlington MA), Growth of epitaxial films by plasma enchanced chemical vapor deposition (PE-CVD).
상세보기
Bar-Gadda Ronny, Hydrocarbon-enhanced dry stripping of photoresist.
상세보기
Savas Stephen E., ICP reactor having a conically-shaped plasma-generating section.
상세보기
Holland John Patrick ; Barnes Michael S., Inductively coupled planar source for substantially uniform plasma flux.
상세보기
Li Li, Ion-implanted resist removal method.
상세보기
Delfino, Michelangelo, Laser treatment of silicon nitride.
상세보기
Mannava Seetha R. (Cincinnati OH) Cooper ; Jr. Ernest B. (Cincinnati OH), Laser-assisted chemical vapor deposition.
상세보기
Savas Stephen E. (Newark CA), Low frequency inductive RF plasma reactor.
상세보기
Kennedy William S. ; Lamm Albert J. ; Wicker Thomas E. ; Maraschin Robert A., Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber.
상세보기
Morishige Yukio,JPX, Method and apparatus for correcting defects in photomask.
상세보기
Grosshart Paul F., Method and apparatus for enhancing outcome uniformity of direct-plasma processes.
상세보기
Murakami Shingo,JPX, Method and apparatus for film formation by chemical vapor deposition.
상세보기
Berrian Donald W. ; Kaim Robert ; Pollock John D., Method and apparatus for flowing gases into a manifold at high potential.
상세보기
Singh Vikram ; McMillin Brian ; Ni Tom ; Barnes Michael ; Yang Richard, Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing.
상세보기
Krogh Ole (San Francisco CA), Method and apparatus for low pressure plasma.
상세보기
Fong Gary L. ; Truong Quoc ; Sivaramakrishman Visweswaren, Method and apparatus for self-cleaning a blocker plate.
상세보기
Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T. ; Siefering Kevin ; Heitzinger John ; Hiatt Fred C., Method and apparatus for surface conditioning.
상세보기
Aitchison Kenneth Allen, Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors.
상세보기
Johnson Dennis Wayne ; Bhat Pervaje Ananda ; Goots Thomas Robert, Method and system for SO2 and SO3 control by dry sorbent/reagent injection and wet scrubbing.
상세보기
Kawamura Seiichiro (Tokyo JPX), Method for annealing by a high energy beam to form a single-crystal film.
상세보기
Denison Dean R. ; Lam James, Method for depositing fluorine doped silicon dioxide films.
상세보기
Dubin Valery ; Ting Chiu, Method for fabricating copper-aluminum metallization.
상세보기
Fan John C. C. (Chestnut Hill MA) Zeiger Herbert J. (Chestnut Hill MA), Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof.
상세보기
Kamgar Avid (Millington NJ) Labate Ernest (South Plainfield NJ) Ligenza Joseph R. (Flanders NJ) Sze Simon M. (New Providence NJ), Method for making semiconductor crystal films.
상세보기
Benda John A. (Amston CT) Parasco Aristotle (Bolton CT), Method for performing multiple beam laser sintering employing focussed and defocussed laser beams.
상세보기
Fujimura Shuzo (Tokyo JPX) Konno Junichi (Kawasaki JPX), Method for removing an ion-implanted organic resin layer during fabrication of semiconductor devices.
상세보기
Hayasaka Nobuo (Kanagawa JPX) Arikado Tsunetoshi (Tokyo JPX) Okano Haruo (Tokyo JPX) Horioka Keiji (Kanagawa JPX), Method for removing composite attached to material by dry etching.
상세보기
Penn Thomas C. (Richardson TX), Method for removing resist layer from substrate with combustible gas burnoff.
상세보기
Keller David J. (Boise ID), Method for selectively etching polysilicon to gate oxide using an insitu ozone photoresist strip.
상세보기
Sato Junichi (Tokyo JPX) Kadomura Shingo (Kanagawa JPX), Method of ashing.
상세보기
MacLeish Joseph H. ; Sanganeria Mahesh K., Method of cleaning wafer substrates.
상세보기
Fan John C. C. (Chestnut Hill MA) Zieger Herbert J. (Chestnut Hill MA), Method of crystallizing amorphous material with a moving energy beam.
상세보기
Gaul Stephen J. (Melbourne FL), Method of fabrication of surface mountable integrated circuits.
상세보기
Liu Chung-Shi,TWX ; Yu Chen-Hua,TWX, Method of forming a smooth copper seed layer for a copper damascene structure.
상세보기
Hong Qi-Zhong ; Jeng Shin-Puu ; Hsu Wei-Yung, Method of forming diffusion barriers encapsulating copper.
상세보기
Noguchi Takashi (Kanagawa JPX) Ogawa Tohru (Kanagawa JPX) Ikeda Yuji (Kanagawa JPX), Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation.
상세보기
Benzing Jeffrey C. (Saratoga CA) Broadbent Eliot K. (San Jose CA) Rough J. Kirkwood H. (San Jose CA), Method of generating plasma having high ion density for substrate processing operation.
상세보기
Nogami Takeshi,JPX ; Brown Dirk D. ; Lopatin Sergey, Method of improving Cu damascene interconnect reliability by laser anneal before barrier polish.
상세보기
Barnes Michael S. (San Francisco CA) Yasuda Arthur Kenichi (Belmont CA), Method of in situ cleaning a vacuum plasma processing chamber.
상세보기
Young Nigel D. (Redhill GB2), Method of manufacturing a thin film transistor.
상세보기
Lam Hon W. (Dallas TX), Method of producing monocrystal on insulator.
상세보기
Fujimura Shuzo (Tokyo JPX) Motoki Yasunari (Kawasaki JPX) Kato Yoshikazu (Mizusawa JPX), Method of removing photoresist on a semiconductor wafer.
상세보기
Schmidt Dieter (Steinbreite 16a D-3400 Goettingen DEX) Delitzsch Volkmar (Immanuel-Kant-Str. 32 D-3400 Goettingen DEX), Method of visualizing the flow pattern of a fluid using optically active, radioactive or chemically active particles of.
상세보기
Abraham Susan C., Methods and apparatus for etching semiconductor wafers and layers thereof.
상세보기
Vanderpot John W. ; Pollock John D., Microfeature wafer handling apparatus and methods.
상세보기
Caughran James W. (Lodi CA), Modular gas box system.
상세보기
Zajac, John P., Modular plasma reactor with local atmosphere.
상세보기
Boitnott Charles A. ; Caughran James W. ; Egbert Steve, Modular process system.
상세보기
Schachameyer Steven R. (Whitefish Bay WI) Benjamin James A. (Waukesha WI) Pardee John B. (Milwaukee WI) Hoppie Lyle O. (Birmingham MI), Multi-layer semiconductor processing with scavenging between layers by excimer laser.
상세보기
Maher, Jr., Joseph A.; Zafiropoulo, Arthur W., Multi-planar electrode plasma etching.
상세보기
Doering Kenneth ; Galewski Carl J., Multipurpose processing chamber for chemical vapor deposition processes.
상세보기
McNeilly Michael A. ; deLarios John M. ; Nobinger Glenn L. ; Krusell Wilbur C. ; Kao Dah-Bin ; Manriquez Ralph K. ; Fan Chiko, Organic preclean for improving vapor phase wafer etch uniformity.
상세보기
Elliott David J. ; Hollman Richard F., Photoreactive surface cleaning.
상세보기
Elliott David J. (Wayland MA) Hollman Richard F. (Chelmsford MA) Yans Francis M. (Concord MA) Singer Daniel K. (Natick MA), Photoreactive surface processing.
상세보기
Maher ; Jr. Joseph A. (Hamilton MA) Zafiropoulo Arthur W. (Manchester MA), Plasma cassette etcher.
상세보기
Williams Larry (Milpitas CA) Pirkle David R. (Soquel CA) Harshbarger William (San Jose CA) Ebel Timothy (San Jose CA), Plasma cleaning method for removing residues in a plasma process chamber.
상세보기
Fior Gianni O. (Albany CA), Plasma etch isotropy control.
상세보기
DeOrnellas Stephen P. ; Cofer Alferd ; Vail Robert C., Plasma etch reactor and method for emerging films.
상세보기
Leibovich Vladimir E. ; Zucker Martin L., Plasma etch system.
상세보기
Zafiropoulo Arthur W. (Manchester MA) Mayer ; Jr. Joseph A. (Hamilton MA), Plasma etchant mixture.
상세보기
Giapis Konstantinos P. (Maplewood NJ) Gottscho Richard A. (Maplewood NJ) Scheller Geoffrey R. (Allentown PA), Plasma etching apparatus and method.
상세보기
Kuo So-Wen,TWX ; Hou Chin-Shan,TWX ; Chang Yung Jung,TWX, Plasma method for stripping ion implanted photoresist layers.
상세보기
DeOrnellas Stephen P. ; Ditizio Robert A., Plasma reactor with a deposition shield.
상세보기
Fujimura Shuzo (Tokyo JPX) Takeuchi Tetsuya (Koube JPX) Miyanaga Takeshi (Ono JPX) Nakano Yoshimasa (Akashi JPX) Matoba Yuji (Koube JPX), Plasma treating method using hydrogen gas.
상세보기
Ting Chiu ; Dubin Valery, Plated copper interconnect structure.
상세보기
Olson Darin S., Point-of-use vaporization system and method.
상세보기
Finn Chris J. (Maple Grove MN) Youngner Daniel W. (Maple Grove MN), Process for controlling mobile ion contamination in semiconductor devices.
상세보기
Grant Robert W. (Excelsior MN) Torek Kevin (State College PA) Novak Richard E. (Plymouth MN) Ruzyllo Jerzy (State College PA), Process for etching oxide films in a sealed photochemical reactor.
상세보기
Gelatos Avgerinos V. (Austin TX) Fiordalice Robert W. (Austin TX), Process for forming copper interconnect structure.
상세보기
Haslbeck John L., Processes and apparatus for removing acid gases from flue gas.
상세보기
Ni Tuqiang ; Collison Wenli, Processing chamber with optical window cleaned using process gas.
상세보기
Ridinger Michael R. (Boylston MA), Radiation melting of semiconductor surface areas through a remote mask.
상세보기
Battles Richard L. ; Lentz Michael J. ; Wright Robert A., SO3 flue gas conditioning system with catalytic converter temperature control by injection of water.
상세보기
Koyama Mitsutoshi,JPX ; Kubota Takeshi,JPX, Semiconductor device with pure copper wirings and method of manufacturing a semiconductor device with pure copper wiring.
상세보기
Noguchi Takashi (Kanagawa JPX), Semiconductor layer annealing method using excimer laser.
상세보기
Hawkins Gilbert A. (Mendon NY), Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal.
상세보기
Schachameyer Steven R. (Whitefish Bay WI) Benjamin James A. (Waukesha WI) Pardee John B. (Milwaukee WI) Hoppie Lyle O. (Birmingham MI), Semiconductor processing technique for generating dangling surface bonds and growing epitaxial layer by excimer laser.
상세보기
Boitnott Charles A., Short-coupled-path extender for plasma source.
상세보기
Williams Norman (Newark CA), Showerhead for uniform distribution of process gas.
상세보기
Broadbent Eliot K. (San Jose CA) Miller Kenneth C. (Mountain View CA), Sweeping method and magnet track apparatus for magnetron sputtering.
상세보기
Meyer Anthony S. ; Mallon Thomas G. ; Withers Bradley ; Young Douglas W., Technique for improving within-wafer non-uniformity of material removal for performing CMP.
상세보기
Wicker Thomas E. ; Cook Joel M. ; Maraschin Robert A. ; Kennedy William S. ; Benjamin Neil, Temperature controlling method and apparatus for a plasma processing chamber.
상세보기
Johnsgard Kristian E. ; McDiarmid James, Thermal processing system with supplemental resistive heater and shielded optical pyrometry.
상세보기
Barbee Steven G. (Dover Plains NY) Leas James M. (Washington DC) Lloyd James R. (Fishkill NY) Nagarajan Arunachala (Wappingers Falls NY), Thin film semiconductor device and method for manufacture.
상세보기
Carey David H. (Austin TX), Trenching techniques for forming vias and channels in multilayer electrical interconnects.
상세보기
Sevcik Edward Scott (Carol Stream IL), UV curing/drying apparatus with interlock.
상세보기
Gray David C. (Sunnyvale CA) Butterbaugh Jeffery W. (Chanhassen MN), UV-enhanced dry stripping of silicon nitride films.
상세보기
Fayfield Robert T. ; Schwab Brent D., UV/halogen treatment for dry oxide etching.
상세보기
Shawver Michael J. (Hayward CA) Lobianco Robert T. (Sunnyvale CA), Vacuum chamber gate valve.
상세보기
Chen Ching-Hwa (Milpitas CA) Pirkle David (Soquel CA) Inoue Takashi (Tokyo JPX) Inoue Takashi (Nishinomiya JPX) Miyahara Shunji (Itami JPX) Tanaka Masahiko (Amagasaki JPX), Window for microwave plasma processing device.
상세보기

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

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Photocatalytic reactor system for treating flue effluents 원문보기

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Photocatalytic reactor system for treating flue effluents 원문보기

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