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A field effect transistor composed of:an insulating layer;a gate electrode;a semiconductor layer including an organic semiconductor material and a binder resin;a source electrode; anda drain electrode,wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, an

A field effect transistor composed of:an insulating layer;a gate electrode;a semiconductor layer including an organic semiconductor material and a binder resin;a source electrode; anda drain electrode,wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.

대표청구항 ▼

1. A field effect transistor comprising:an insulating layer;a gate electrode;a semiconductor layer including an organic semiconductor material and a binder resin;a source electrode; anda drain electrode,wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode,

1. A field effect transistor comprising:an insulating layer;a gate electrode;a semiconductor layer including an organic semiconductor material and a binder resin;a source electrode; anda drain electrode,wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer. 2. The field effect transistor of claim 1, wherein the semiconductor layer further comprises a dispersing agent. 3. The field effect transistor of claim 1, wherein the semiconductor layer further comprises a dispersing agent that is present in an amount ranging from about 0.1% to about 50% of the weight of the binder resin. 4. The field effect transistor of claim 1, wherein the semiconductor layer further comprises a dispersing agent that is present in an amount ranging from about 1% to about 10% of the weight of the binder resin. 5. The field effect transistor of claim 1, wherein the organic semiconductor material in the semiconductor layer has a particle size ranging from about 10 nm to about 1,000 nm. 6. The field effect transistor of claim 1, wherein the organic semiconductor material in the semiconductor layer has a particle size ranging from about 50 nm to about 250 nm. 7. The field effect transistor of claim 1, wherein the organic semiconductor material is a n-type material. 8. The field effect transistor of claim 1, wherein the organic semiconductor material is dibromoanthanthrone and the resin binder is polyvinylbutyral. 9. The field effect transistor of claim 1, wherein the organic semiconductor material is a p-type material. 10. The field effect transistor of claim 1, wherein the organic semiconductor material is present in the semiconductor layer in an amount ranging from about 20% to about 99.5% by weight based on the total weight of the organic semiconductor material and the binder resin. 11. The field effect transistor of claim 1, wherein the organic semiconductor material is present in the semiconductor layer in an amount ranging from about 60% to about 95% by weight based on the total weight of the organic semiconductor material and the binder resin. 12. The field effect transistor of claim 1, wherein the binder resin is present in the semiconductor layer in an amount ranging from about 80% to less than about 1% by weight based on the total weight of the organic semiconductor material and the binder resin. 13. The field effect transistor of claim 1, wherein the binder resin is present in the semiconductor layer in an amount ranging from about 40% to about 5% by weight based on the total weight of the organic semiconductor material and the binder resin. 14. The field effect transistor of claim 1, wherein the source electrode and the drain electrodes have a thickness ranging from about 40 nm to about 1 micrometer.