초록 ▼

A method wherein a thermal gradient over a substrate enhances Chemical Vapor Deposition (CVD) at low pressures. An upper heat source is positioned above the substrate and a lower heat source is positioned below the substrate. The upper and lower heat sources are operated to raise the substrate tempe

A method wherein a thermal gradient over a substrate enhances Chemical Vapor Deposition (CVD) at low pressures. An upper heat source is positioned above the substrate and a lower heat source is positioned below the substrate. The upper and lower heat sources are operated to raise the substrate temperature to 400-700° and cause a heat gradient of 100-200° C. between the upper and lower heat sources. This heat gradient causes an increase in the deposition rate for a given reactant gas flow rate and chamber pressure. The preferred parameters for implementation of the present invention for poly crystalline silicon deposition include the temperature of the upper heat source 100-200° C. above the lower heat source, a substrate temperature in the range of 400-700° C., a reactant gas pressure between 250 and 1000 mTorr, and a gas flow rate of 200-800 sccm. The substrate is rotated, with 5 RPM being a typical rate. A deposition rate of 2000 angstroms per minute deposition of poly crystalline silicon is achieved with a 200° C. temperature differential, substrate temperature of 650° C., pressure of 250 mTorr and silane flow of 500 sccm.

대표청구항 ▼

1. A method of chemical vapor deposition on a substrate comprising:a) placing a substrate on a carrier in a deposition chamber;b) rotating said substrate;c) heating said substrate, said heating applied to create a temperature gradient in the range of 50° C. to 100° C. per inch above a depo

1. A method of chemical vapor deposition on a substrate comprising:a) placing a substrate on a carrier in a deposition chamber;b) rotating said substrate;c) heating said substrate, said heating applied to create a temperature gradient in the range of 50° C. to 100° C. per inch above a deposition surface of said substrate wherein the temperature increases with increasing distance from said deposition surface; andd) providing a flow of process gas across a surface of said substrate by injecting said process gas at said surface with a plurality of gas injectors so as to concentrate said gas at said surface,thereby enhancing the deposition rate on said substrate over the deposition rate in an isothermal environment. 2. A method as recited in claim 1 wherein said heating is accomplished with a first heater radiating toward said deposition surface, and with a second heater radiating toward a back surface of said substrate. 3. A method as recited in claim 2 wherein said first heater radiates a different amount of heat energy than said second heater. 4. A method as recited in claim 3 wherein said heating includes a first thermal plate between said first heater and said substrate, and a second thermal plate between said second heater and said substrate. 5. A method as recited in claim 4 wherein said temperature gradient includes a temperature difference in the range of 100° C. to 200° C. between said first plate and said second plate. 6. A method as recited in claim 1 wherein said providing includes supplying said process gas at a flow rate in the range of 200 sccm to 800 sccm. 7. A method as recited in claim 1 wherein said providing includes passing said process gas over said substrate at a gas velocity in excess of 100 cm/sec. 8. A method as recited in claim 1 wherein said gas injectors are temperature controlled. 9. A method as recited in claim 1 wherein said gas injectors are directed at said deposition surface.