초록 ▼

A power field effect transistor utilizes a retrograded-doped transition region to enhance forward on-state and reverse breakdown voltage characteristics. Highly doped shielding regions may also be provided that extend adjacent the transition region and contribute to depletion of the transition regio

A power field effect transistor utilizes a retrograded-doped transition region to enhance forward on-state and reverse breakdown voltage characteristics. Highly doped shielding regions may also be provided that extend adjacent the transition region and contribute to depletion of the transition region during both forward on-state conduction and reverse blocking modes of operation. In a vertical embodiment, the transition region has a peak first conductivity type dopant concentration at a first depth relative to a surface on which gate electrodes are formed. A product of the peak dopant concentration and a width of the transition region at the first depth is preferably in a range between 1×10 12 cm −2 and 7×10 12 cm −2 .

대표청구항 ▼

1. A vertical power device, comprising:a semiconductor substrate having first and second trenches and a drift region of first conductivity type therein that extends into a mesa defined by the first and second trenches;first and second insulated electrodes in the first and second trenches;first and s

1. A vertical power device, comprising:a semiconductor substrate having first and second trenches and a drift region of first conductivity type therein that extends into a mesa defined by the first and second trenches;first and second insulated electrodes in the first and second trenches;first and second base regions of second conductivity type that extend adjacent sidewalls of the first and second trenches, respectively, and in the mesa;first and second source regions of first conductivity type in said first and second base regions, respectively;an insulated gate electrode that extends on a surface of said semiconductor substrate and opposite said first base region; anda transition region of first conductivity type that extends between said first and second base regions, forms a non-rectifying junction with the drift region and has a vertically retrograded first conductivity type doping profile relative to the surface. 2. The device of claim 1, wherein a peak first conductivity type dopant concentration in said transition region is at least ten times greater than a value of the retrograded first conductivity type doping profile at the surface. 3. The device of claim 1, wherein said first and second insulated electrodes are electrically connected to said first and second source regions. 4. The device of claim 3, wherein said first insulated electrode ohmically contacts said first base region and said first source region at the sidewall of the first trench. 5. The device of claim 1, wherein said transition region has a peak first conductivity type dopant concentration therein at a first depth relative to the surface; and wherein a product of the peak first conductivity type dopant concentration in said transition region and a width of said transition region at the first depth is in a range between 1×10 12 cm −2 and 7×10 12 cm −2 . 6. The device of claim 5, wherein the peak first conductivity type dopant concentration in said transition region is greater than about 1×10 17 cm −3 ; wherein the surface defines an interface between said insulated gate electrode and said transition region; and wherein a first conductivity type dopant concentration in said transition region is less than about 2×10 16 cm −3 at the surface. 7. The device of claim 1, wherein said transition region has a peak first conductivity type dopant concentration therein at a first depth relative to the surface; and wherein a product of the peak first conductivity type dopant concentration in said transition region and a width of said transition region at the first depth is in a range between 3.5×10 12 cm −2 and 6.5×10 12 cm −2 . 8. The device of claim 1, wherein said transition region has a peak first conductivity type dopant concentration therein at a first depth relative to the surface; and wherein a product of the peak first conductivity type dopant concentration in said transition region and a width of the non-rectifying junction is in a range between 1×10 12 cm −2 and 7×10 12 cm −2 . 9. The device of claim 1, wherein said transition region has a peak first conductivity type dopant concentration therein at a first depth relative to the surface; and wherein a product of the peak first conductivity type dopant concentration in said transition region, a width of said transition region at the first depth and a width of the mesa is less than 2×10 15 cm −1 . 10. The device of claim 1, wherein said first source region and said first base region are self-aligned to said insulated gate electrode. 11. The device of claim 1, further comprising:a first shielding region of second conductivity type that extends between said first base region and the drift region and is more highly doped than said first base region; anda second shielding region of second conductivity type that extends between said second base region and the drift region and is more highly doped than said second base region. 12. The device of claim 11, wherein said first and second shielding regions form respective P-N rectifying junctions with said transition region; wherein said transition region has a peak first conductivity type dopant concentration therein at a first depth relative to the surface; and wherein a product of the peak first conductivity type dopant concentration in said transition region and a width between said first and second shielding regions is in a range between 1×10 12 cm −2 and 7×10 12 c −2 . 13. The device of claim 11, wherein the non-rectifying junction extends between said first and second shielding regions. 14. The device of claim 1, wherein the drift region has a vertically retrograded first conductivity type doping profile therein relative to the surface. 15. The device of claim 1, wherein said insulated gate electrode extends opposite said first and second source regions, said first and second base regions and said transition region. 16. The device of claim 1, further comprising a third trench in said semiconductor substrate, said second and third trenches defining a dummy mesa therebetween into which the drift region extends. 17. The device of claim 16, further comprising a third base region of second conductivity type that extends in the dummy mesa and is electrically connected to said first and second source regions. 18. The device of claim 17, wherein a width of the dummy mesa extending between said second and third trenches equals a with of the mesa extending between said first and second trenches. 19. The device of claim 16, further comprising:a third insulated electrode in said third trench;a field plate insulating layer on the dummy mesa; anda source electrode that extends on said field plate insulating layer and is electrically connected to said first, second and third insulated electrodes. 20. The device of claim 19, wherein a spacing between said first and second trenches is unequal to the spacing between said second and third trenches. 21. A vertical power device, comprising:a semiconductor substrate having first and second trenches and a drift region of first conductivity type therein that extends into a mesa defined by the first and second trenches;first and second insulated electrodes in the first and second trenches;first and second base regions of second conductivity type that extend adjacent sidewalls of the first and second trenches, respectively, and in the mesa;first and second source regions of first conductivity type in said first and second base regions, respectively;an insulated gate electrode that extends on a surface of said semiconductor substrate and opposite said first base region; anda transition region of first conductivity type that extends between said first and second base regions and forms a non-rectifying junction with the drift region, said transition region having a peak first conductivity type dopant concentration therein at a first depth relative to a surface of said substrate; and wherein a product of the peak first conductivity type dopant concentration in said transition region and a width of said transition region at the first depth is in a range between 3.5×10 12 cm −2 and 6.5×10 12 cm −2 . 22. The vertical power device of claim 21, wherein a product of a width of the mesa and a quantity of first conductivity type charge in a portion of the mesa extending below the transition region is preferably in a range between 2×10 9 cm −1 and 2×10 10 cm −1 . 23. The vertical power device of claim 21, further comprising third and fourth trenches in said semiconductor substrate, said second and third trenches defining a first dummy mesa therebetween into which the drift region extends and said third and fourth trenches defining a second dummy mesa therebetween into which th drift region extends.