초록

A halogen gas plasma-resistant member to be exposed to a halogen gas plasma, includes a main body of said member, and a corrosion-resistant film formed at least a surface of said main body, wherein a peeling resistance of the corrosive film to said main body is not less than 15 MPa.

대표청구항 ▼

1. A laminate comprising an alumina substrate and a yttrium compound film formed on said alumina substrate, wherein a reaction product between said alumina and said yttrium compound exists along an interface between said alumina substrate and said yttrium compound film. 2. A laminate comprising an a

1. A laminate comprising an alumina substrate and a yttrium compound film formed on said alumina substrate, wherein a reaction product between said alumina and said yttrium compound exists along an interface between said alumina substrate and said yttrium compound film. 2. A laminate comprising an alumina substrate, a yttrium compound film formed on said substrate, and an intermediate layer along an interface between said alumina substrate and said yttrium compound film, said intermediate layer being made of a reaction product between said alumina and said yttrium compound. 3. The laminate set forth in claim 1, wherein said yttrium compound comprises yttria. 4. The laminate set forth in claim 1, wherein said yttrium compound comprises yttrium fluoride. 5. The laminate set forth in claim 2, wherein said reaction product comprises a crystalline phase composed of a composite oxide of yttria and alumina. 6. The laminate set forth in claim 5, wherein said reaction product comprises a crystalline phase composed of Y 3 Al 5 O 12 . 7. The laminate set forth in claim 5, wherein said reaction product comprises a crystalline phase composed of Y 4 Al 2 O 9 . 8. A laminate comprising a substrate made of alumina, a film of a yttrium compound formed on said substrate, and an intermediate layer present along an interface between said alumina substrate and said yttrium compound film, said intermediate layer comprising a crystalline phase of a composite oxide of alumina and yttria. 9. The laminate set forth in claim 8, wherein said yttrium compound comprises yttria. 10. The laminate set forth in claim 8, wherein said yttrium compound comprises yttrium fluoride. 11. The laminate set forth in claim 8, wherein said reaction product comprises a crystalline phase composed of Y 3 Al 5 O 12 . 12. The laminate set forth in claim 8, wherein said reaction product comprises a crystalline phase composed of Y 4 Al 2 O 9 . 13. The laminate set forth in claim 8, further comprising a microstructure along an interface between said intermediate layer and said substrate, said microstructure comprising fine particles made of a material identical to that of said intermediate layer and voids existing among said fine particles. 14. The laminate set forth in claim 1, wherein a surface of said yttrium compound film has a center-line average surface roughness in a range of 3 to 6 μm and a surface waveness in a range of 1 to 3 μm. 15. The laminate set forth in claim 1, wherein a peeling resistance of the yttrium compound film to the substrate is not less than 15 MPa when measured in a Sebastans test with a diameter of a bonded surface being 5.2 mm. 16. A corrosion-resistant member comprising the laminate set forth in claim 1. 17. A halogen gas plasma-resistant member to be exposed to a halogen gas plasma, comprising the laminate set forth in claim 1 as a substrate. 18. A halogen gas plasma-resistant member to be exposed to a halogen gas plasma, comprising a main body and a corrosion-resistant oxide ceramic film formed at least on a surface of said main body, wherein a peeling resistance of said corrosion-resistant film to said main body is not less than 15 MPa, and wherein a center-line average surface roughness Ra of an underlying face of said corrosion-resistant film is not less than 1.2 mm. 19. A halogen gas plasma-resistant member to be exposed to a halogen gas plasma, comprising a main body and a corrosion-resistant oxide ceramic film formed at least on a surface of said main body, said member further comprising an intermediate layer between said main body and said corrosion-resistant film, said intermediate layer having a coefficient of thermal expansion between that of said member main body and said corrosion-resistant film, wherein a peeling resistance of said corrosion-resistant film to said main body is not less than 15 MPa. 20. A halogen gas plasma-resistant member to be exposed to a halogen gas plasma, comprising a main body and a cor rosion-resistant oxide ceramic film formed at least on a surface of said main body, said member further comprising an intermediate layer between said main body and said corrosion-resistant film, said intermediate layer comprising a mixture, a solid solution or a reaction product of a material of said corrosion-resistant film and a material of said main body, wherein a peeling resistance of said corrosion-resistant film to said main body is not less than 15 MPa. 21. The member set forth in claim 18, wherein a relative density of said corrosion-resistant film is not less than 90%. 22. The member set forth in claim 19, wherein a relative density of said corrosion-resistant film is not less than 90%. 23. The member set forth in claim 18, wherein a center-line average surface roughness Ra of said corrosion-resistant film is not more than 1.5 mm. 24. The member set forth in claim 19, wherein a center-line average surface roughness Ra of said corrosion-resistant film is not more than 1.5 mm. 25. The member set forth in claim 20, wherein a center-line average surface roughness Ra of said corrosion-resistant film is not more than 1.5 mm. 26. The member set forth in claim 18, wherein a center-line average surface roughness Ra of said corrosion-resistant film is not less than 1.2 mm. 27. The member set forth in claim 19, wherein a center-line average surface roughness Ra of said corrosion-resistant film is not less than 1.2 mm. 28. The member set forth in claim 20, wherein a center-line average surface roughness Ra of said corrosion-resistant film is not less than 1.2 mm. 29. The member set forth in claim 18, said corrosion-resistant film having a waveness of not less than 1.2 mm. 30. The member set forth in claim 19, said corrosion-resistant film having a waveness of not less than 1.2 mm. 31. The member set forth in claim 20, said corrosion-resistant film having a waveness of not less than 1.2 mm. 32. The member set forth in claim 18, wherein an underlying face of said corrosion-resistant film is porous. 33. The member set forth in claim 19, wherein an underlying face of said corrosion-resistant film is porous. 34. The member set forth in claim 20, wherein an underlying face of said corrosion-resistant film is porous. 35. The member set forth in claim 18, wherein said center-line average surface roughness Ra of said underlying face of the corrosion-resistant film is not more than 2 mm. 36. The member set forth in claim 18, wherein an open porosity of said corrosion-resistant film is not more than 1.5 vol %. 37. The member set forth in claim 18, wherein said corrosion-resistant film is free from cracks having lengths greater than or equal to 3 mm and/or widths greater than or equal to 0.1 mm. 38. The member set forth in claim 19, wherein said corrosion-resistant film is free from cracks having lengths greater than or equal to 3 mm and/or widths greater than or equal to 0.1 mm. 39. The member set forth in claim 20, wherein said corrosion-resistant film is free from cracks having lengths greater than or equal to 3 mm and/or widths greater than or equal to 0.1 mm. 40. The member set forth in claim 19, wherein a thickness of said intermediate layer is not more than 20 mm. 41. The member set forth in claim 20, wherein a concentration ratio of said material of said corrosion-resistant film to said material of said main body in said intermediate layer increases in a direction from a side of said main body to that of said corrosion-resistant film. 42. The member set forth in claim 19, wherein said material of said corrosion-resistant film comprises a yttrium compound. 43. The member set forth in claim 20, wherein said material of said corrosion-resistant film comprises a yttrium compound. 44. The member set forth in claim 19, wherein a concentration of iron atoms contained in said corrosion-resistant film is not more than 30 ppm. 45. The member set forth in claim 20, wherein a concentration of iron atoms contained in said corrosion-resistant fil m is not more than 30 ppm. 46. The member set forth in claim 19, wherein said material of said main body is alumina. 47. The member set forth in claim 20, wherein said material of said main body is alumina. 48. A method for producing the halogen gas plasma-resistant member set forth in claim 18, comprising the steps of preparing said main body of said member, and forming said corrosion-resistant film on at least a surface of said main body by melting a material of said corrosion-resistant film and spraying said melted material of said corrosion-resistant film onto said surface of said main body to form a spray film on said surface of said main body. 49. The method set forth in claim 48, wherein said material of said corrosion-resistant film is sprayed in a low-pressure state. 50. The method set forth in claim 48, wherein said spray film is thermally treated. 51. The method set forth in claim 48, wherein said material of said corrosion-resistant film comprises a yttrium compound. 52. The method set forth in claim 50, wherein said thermal treatment is effected at a temperature of 1400 to 1600° C. 53. The method set forth in claim 48, wherein pores located at a surface portion of said sprayed film are reduced by depositing said material of said corrosion-resistant film on said spray film according to a chemical gas phase growth method or an electrochemical gas phase growth method. 54. A method for producing the halogen gas plasma-resistant member set forth in claim 18, comprising the steps of preparing said main body of said member, and forming said corrosion-resistant film on at least a surface of said main body according to a chemical gas phase growth method or an electrochemical gas phase growth method.