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Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-035/00
  • C23C-016/00
출원번호 US-0024471 (2001-12-21)
우선권정보 JP-0401550 (2000-12-28)
발명자 / 주소
  • Kondo, Hiroyuki
  • Oguri, Emi
  • Hirose, Fusao
  • Nakamura, Daisuke
  • Okamoto, Atsuto
  • Sugiyama, Naohiro
출원인 / 주소
  • Denso Corporation
대리인 / 주소
    Posz & Bethards, PLC
인용정보 피인용 횟수 : 16  인용 특허 : 17

초록

It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front

대표청구항

1. An apparatus for producing a silicon carbide single crystal where a silicon carbide single crystal substrate that is a seed crystal is disposed inside a container and a source material for the silicon carbide single crystal is supplied to grow the silicon carbide single crystal on the silicon car

이 특허에 인용된 특허 (17)

  1. Balakrishna Vijay ; Augustine Godfrey ; Gaida Walter E. ; Thomas R. Noel ; Hopkins Richard H., Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide.
  2. Barrett Donovan L. (Penn Hills Township PA) Seidensticker ; deceased Raymond G. (late of Forest Hills PA by Joan Seidensticker ; heir ) Hopkins Richard H. (Murrysville PA), Apparatus for growing large silicon carbide single crystals.
  3. Vodakov, Yury Alexandrovich; Ramm, Mark Grigorievich; Mokhov, Evgeny Nikolaevich; Roenkov, Alexandr Dmitrievich; Makarov, Yury Nikolaevich; Karpov, Sergei Yurievich; Ramm, Mark Spiridonovich; Helava,, Apparatus for growing low defect density silicon carbide.
  4. Vehanen Asko Erkki,FIX ; Yakimova Rositza Todorova,SEX ; Tuominen Marko,SEX ; Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Device for epitaxially growing objects.
  5. Volkl Johannes,DEX ; Lanig Peter,DEX, Device for producing SiC single crystals.
  6. Barrett Donovan L. ; Hopkins Richard H., Feedstock arrangement for silicon carbide boule growth.
  7. Vodakov, Yury Alexandrovich; Mokhov, Evgeny Nikolaevich; Ramm, Mark Grigorievich; Roenkov, Alexandr Dmitrievich; Makarov, Yury Nikolaevich; Karpov, Sergei Yurievich; Ramm, Mark Spiridonovich; Temkin,, Low defect axially grown single crystal silicon carbide.
  8. Kazukuni Hara JP; Kouki Futatsuyama JP; Shoichi Onda JP; Fusao Hirose JP; Emi Oguri JP; Naohiro Sugiyama JP; Atsuto Okamoto JP, Method and apparatus for fabricating high quality single crystal.
  9. Barrett Donovan L. ; Seidensticker ; deceased Raymond G. ; Hopkins Richard H., Method for growing large silicon carbide single crystals.
  10. Dmitriev Vladimir A. (Fuquay-Varina NC) Rendakova Svetlana V. (St. Petersburg RUX) Ivantsov Vladimir A. (St. Petersburg RUX) Carter ; Jr. Calvin H. (Cary NC), Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structu.
  11. Hiromu Shiomi JP; Shigehiro Nishino JP, Method of making SiC single crystal and apparatus for making SiC single crystal.
  12. Shiomi Hiromu,JPX ; Nishino Shigehiro,JPX, Method of making SiC single crystal and apparatus for making SiC single crystal.
  13. Kitou Yasuo,JPX ; Sugiyama Naohiro,JPX ; Okamoto Atsuto,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX, Method of producing single crystals and a seed crystal used in the method.
  14. Masashi Shigeto JP; Kotaro Yano JP; Nobuyuki Nagato JP, Process for producing silicon carbide single crystal and production apparatus therefor.
  15. Volkl Johannes,DEX ; Stein Rene,DEX, Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers.
  16. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
  17. Vodakov, Yury Alexandrovich; Mokhov, Evgeny Nikolaevich; Ramm, Mark Grigorievich; Roenkov, Alexandr Dmitrievich; Makarov, Yury Nikolaevich; Karpov, Sergei Yurievich; Ramm, Mark Spiridonovich; Temkin,, Tantalum crucible fabrication and treatment.

이 특허를 인용한 특허 (16)

  1. Kato,Tomohisa; Nishizawa,Shinichi; Hirose,Fusao, Apparatus for manufacturing single crystal.
  2. Madar, Roland; Pons, Michel; Baillet, Francis; Charpentier, Ludovic; Pernot, Etienne; Chaussende, Didier; Turover, Daniel, Formation of single-crystal silicon carbide.
  3. Zwieback, Ilya; Gupta, Avinash K.; Semenas, Edward; Anderson, Thomas E., Guided diameter SiC sublimation growth with multi-layer growth guide.
  4. Loboda, Mark; Drachev, Roman; Hansen, Darren; Sanchez, Edward, Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion.
  5. Loboda, Mark, Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion.
  6. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan; Tsvetkov, Valeri F., Method for producing semi-insulating resistivity in high purity silicon carbide crystals.
  7. Oyanagi, Naoki; Syounai, Tomohiro; Sakaguchi, Yasuyuki, Method for producing silicon carbide single crystal.
  8. Gupta, Avinash K.; Zwieback, Ilya; Chen, Jihong; Getkin, Marcus; Stepko, Walter R. M.; Semenas, Edward, Method of annealing a sublimation grown crystal.
  9. Nishiguchi, Taro; Sasaki, Makoto; Harada, Shin, Method of manufacturing single crystal.
  10. Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., Method of producing high quality silicon carbide crystal in a seeded growth system.
  11. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan Georg; Brady, Mark; Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valerl F., One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer.
  12. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan Georg; Brady, Mark; Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., One hundred millimeter single crystal silicon carbide wafer.
  13. Leonard,Robert Tyler; Powell,Adrian; Mueller,Stephan Georg; Tsvetkov,Valeri F., One hundred millimeter single crystal silicon carbide wafer.
  14. Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface.
  15. Nishino,Shigehiro; Murata,Kazutoshi; Chinone,Yoshiharu, Production method of α-SiC wafer.
  16. Loboda, Mark, Reaction cell for growing SiC crystal with low dislocation density.
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