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Disposing the light absorption layer formed in contact with a polycrystal silicon layer of a bottom gate type polycrystal silicon TFT allows a depletion layer formed between drain and channel forming regions to extend further into the inside of the light absorption layer, resulting in collection of

Disposing the light absorption layer formed in contact with a polycrystal silicon layer of a bottom gate type polycrystal silicon TFT allows a depletion layer formed between drain and channel forming regions to extend further into the inside of the light absorption layer, resulting in collection of photo carriers produced in the depletion layer into the channel forming region. The photo carriers collected into the channel forming region are subsequently collected into the source region to be output as large photocurrents by high mobility of the polycrystal silicon.

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1. An image sensor comprising:an optical sensor comprising a gate electrode over a substrate, a polycrystal semiconductor layer formed over said gate electrode with a gate insulating film interposed therebetween, and an amorphous semiconductor layer formed on said polycrystal semiconductor layer;a t

1. An image sensor comprising:an optical sensor comprising a gate electrode over a substrate, a polycrystal semiconductor layer formed over said gate electrode with a gate insulating film interposed therebetween, and an amorphous semiconductor layer formed on said polycrystal semiconductor layer;a thin film transistor electrically connected to said optical sensor in series; anda capacitor having a first electrode and a second electrode, wherein said first electrode of said capacitor is electrically connected to said optical sensor and said thin film transistor. 2. An image sensor of claim 1 wherein said image sensor is a linear image sensor. 3. An image sensor of claim 1 wherein a gate electrode of said thin film transistor is electrically connected to a shift register circuit. 4. An image sensor of claim 1 wherein said thin film transistor is electrically connected to a signal output terminal. 5. An image sensor comprising:an optical sensor comprising a gate electrode over a substrate, a polycrystal semiconductor layer formed over said gate electrode with a gate insulating film interposed therebetween, and an amorphous semiconductor layer formed on said polycrystal semiconductor layer;a thin film transistor electrically connected to said optical sensor in series;a capacitor having a first electrode and a first electrode, wherein said first electrode of said capacitor is electrically connected to said optical sensor and said thin film transistor; andan amplifier electrically connected to said thin film transistor in series. 6. An image sensor of claim 5 wherein said image sensor is a linear image sensor. 7. An image sensor of claim 5 wherein a gate electrode of said thin film transistor is electrically connected to at least one shift register circuit. 8. An image sensor of claim 5 wherein said amplifier is electrically connected to a signal output terminal. 9. An image sensor comprising:an optical sensor comprising a gate electrode over a substrate, a polycrystal semiconductor layer formed over said gate electrode with a gate insulating film interposed therebetween, and an amorphous semiconductor layer formed on said polycrystal semiconductor layer;a thin film transistor electrically connected to said optical sensor; anda capacitor having a first electrode and a second electrode, wherein said first electrode of said capacitor is electrically connected to said optical sensor and said thin film transistor. 10. An image sensor of claim 9 wherein said image sensor is a linear image sensor. 11. An image sensor of claim 9 wherein a gate electrode of said thin film transistor is electrically connected to a shift register circuit. 12. An image sensor of claim 9 wherein said thin film transistor is electrically connected to a signal output terminal. 13. An image sensor comprising:an optical sensor comprising a gate electrode over a substrate, a polycrystal semiconductor layer formed over said gate electrode with a gate insulating film interposed therebetween, and an amorphous semiconductor layer formed on said polycrystal semiconductor layer;a thin film transistor electrically connected to said optical sensor;a capacitor having a first electrode and a first electrode, wherein said first electrode of said capacitor is electrically connected to said optical sensor and said thin film transistor; andan amplifier electrically connected to said thin film transistor in series. 14. An image sensor of claim 13 wherein said image sensor is a linear image sensor. 15. An image sensor of claim 13 wherein a gate electrode of said thin film transistor is electrically connected to at least one shift register circuit. 16. An image sensor of claim 13 wherein said amplifier is electrically connected to a signal output terminal. 17. An image sensor comprising:an optical sensor comprising a gate electrode over a substrate, a polycrystal semiconductor layer formed over said gate electrode with a gate insulating film interposed therebetween, and an amorphou s semiconductor layer formed on said polycrystal semiconductor layer; anda thin film transistor electrically connected to said optical sensor. 18. An image sensor of claim 17 wherein said image sensor is a linear image sensor. 19. An image sensor of claim 17 wherein a gate electrode of said thin film transistor is electrically connected to a shift register circuit. 20. An image sensor of claim 17 wherein said thin film transistor is electrically connected to a signal output terminal. 21. An image sensor comprising:an optical sensor comprising a gate electrode over a substrate, a polycrystal semiconductor layer formed over said gate electrode with a gate insulating film interposed therebetween, and an amorphous semiconductor layer formed on said polycrystal semiconductor layer;a thin film transistor electrically connected to said optical sensor; andan amplifier electrically connected to said thin film transistor in series. 22. An image sensor of claim 21 wherein said image sensor is a linear image sensor. 23. An image sensor of claim 21 wherein a gate electrode of said thin film transistor is electrically connected to at least one shift register circuit. 24. An image sensor of claim 21 wherein said amplifier is electrically connected to a signal output terminal.