초록 ▼

A power MOSFET includes a semiconductor substrate having a drift region therein and a transition region that extends between the drift region and a first surface of the semiconductor substrate. The transition region has a vertically retrograded doping profile therein that peaks at a first depth rela

A power MOSFET includes a semiconductor substrate having a drift region therein and a transition region that extends between the drift region and a first surface of the semiconductor substrate. The transition region has a vertically retrograded doping profile therein that peaks at a first depth relative to the first surface. An insulated gate electrode is provided that extends on the first surface and has first and second opposing ends. First and second base regions of second conductivity type are provided in the substrate. The first and second base regions are self-aligned to the first and second ends of the insulated gate electrode, respectively, and form respective P-N junctions with opposing sides of an upper portion of the transition region extending adjacent the first surface. First and second source regions are provided in the first and second base regions, respectively. First and second base shielding regions are also provided and these regions are more highly doped and formed deeper than the first and second base regions. The first and second base shielding regions also extend laterally towards each other in the substrate to thereby constrict a neck of the upper portion of the transition region to a minimum width at a second depth relative to the first surface that is deeper than the first and second base regions.

대표청구항 ▼

1. A vertical power device, comprising:a semiconductor substrate having a drift region of first conductivity type therein and a transition region of first conductivity type that extends between the drift region and a first surface of said semiconductor substrate, said transition region having a vert

1. A vertical power device, comprising:a semiconductor substrate having a drift region of first conductivity type therein and a transition region of first conductivity type that extends between the drift region and a first surface of said semiconductor substrate, said transition region having a vertically retrograded first conductivity type doping profile therein that peaks at a first depth relative to the first surface;an insulated gate electrode that extends on the first surface and has first and second opposing ends;first and second base regions of second conductivity type that are self-aligned to the first and second ends of said insulated gate electrode, respectively, and form respective P-N junctions with opposing sides of an upper portion of said transition region extending adjacent the first surface;first and second source regions of first conductivity type in said first and second base regions, respectively; andfirst and second base shielding regions of second conductivity type that are more highly doped than said first and second base regions and extend laterally towards each other in said semiconductor substrate to thereby constrict a neck of the upper portion of said transition region to a minimum width at a second depth relative to the first surface. 2. The device of claim 1, wherein a product of the peak first conductivity type dopant concentration in said transition region and a width of said transition region at the first depth is in a range between about 1×10 12 cm −2 and about 7×10 12 cm −2 . 3. The device of claim 1, wherein a product of the peak first conductivity type dopant concentration in said transition region and a width of said transition region at the first depth is in a range between about 3.5×10 12 cm −2 and about 6.5×10 12 cm −2 . 4. The device of claim 1, wherein said first and second base shielding regions are self-aligned to the first end second opposing ends of said insulated gate electrode. 5. The device of claim 4, wherein a product of the peak first conductivity type dopant concentration in said transition region and a width of said transition region at the second depth is in a range between about 1×10 12 cm −2 and about 7×10 12 cm −2 . 6. The device of claim 4, wherein a product of the peak first conductivity type dopant concentration in said transition region and a width of said transition region at the second depth is in a range between about 3.5×10 12 cm −2 and about 6.5×10 12 cm −2 . 7. A vertical power device, comprising:a semiconductor substrate having a drift region of first conductivity type therein and a transition region of first conductivity type that extends between the drift region and a first surface of said semiconductor substrate;an insulated gate electrode that extends on a portion of the first surface located opposite an upper portion of said transition region;first and second regions of second conductivity type that are self-aligned to first and second opposing ends of said insulated gate electrode, respectively, form respective P-N junctions with opposing sides of said transition region and constrict a neck of the upper portion of said transition region to a minimum width at a first depth relative to the first surface that is greater than about 0.25 microns; andfirst and second source regions of first conductivity type in said first and second regions of second conductivity type, respectively; andwherein a product of a first conductivity type dopant concentration in said transition region at the first depth and a width of said transition region at the first depth is in a range between about 1×10 12 cm 12 and about 7×10 12 cm −2 . 8. The device of claim 7, further comprising a source electrode that is electrically connected to said first and second source regions and forms a Schottky rectifying junction with said semiconductor substrate.