IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0118729
(2002-04-08)
|
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
Blackwell Sanders Peper Martin LLP
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
20 |
초록
▼
The present invention is directed to a novel semiconductor device, which can be efficiently fabricated for use in Zener diode applications. Precision Zener diodes and the method for manufacturing the same are provided. The Zener diodes of the present invention are made from a semiconductor substrate
The present invention is directed to a novel semiconductor device, which can be efficiently fabricated for use in Zener diode applications. Precision Zener diodes and the method for manufacturing the same are provided. The Zener diodes of the present invention are made from a semiconductor substrate layer having a range or resistivity, on which is grown an epitaxial layer. The epitaxial layer has a resistivity greater than that of the substrate. The diode also has an interior region of doped semiconductor material of the same conductivity type as the substrate. The interior region extends through the epitaxial layer and into the substrate layer. The diode also has a junction layer of a conductivity type different from the substrate. The junction layer is formed in the epitaxial surface, and the junction layer forms an interior P/N junction with the interior region and a peripheral P/N junction with a peripheral portion of the device. An additional device can optionally be produced in which a low contact resistance layer is implanted into an exterior surface of the junction layer.
대표청구항
▼
1. A semiconductor device having a first electrode and a second electrode, the device comprising:a semiconductor substrate layer of a substrate conductivity type and of a substrate resistivity;an epitaxial layer having a resistivity of at least approximately 5 ohm-cm, grown on the substrate layer, t
1. A semiconductor device having a first electrode and a second electrode, the device comprising:a semiconductor substrate layer of a substrate conductivity type and of a substrate resistivity;an epitaxial layer having a resistivity of at least approximately 5 ohm-cm, grown on the substrate layer, the epitaxial layer having an epitaxial layer conductivity type consistent with the substrate conductivity type, the epitaxial layer having an epitaxial layer resistivity greater than the substrate resistivity, the epitaxial layer having an epitaxial surface opposite to the substrate layer;an interior region of doped semiconductor material having an interior conductivity type consistent with the substrate conductivity type, the interior region extending into the epitaxial layer; anda junction layer of a junction conductivity type different from the substrate conductivity type formed in the epitaxial surface, the junction layer forming an interior P/N junction with the interior region and the junction layer forming a peripheral P/N junction with a peripheral portion of the device. 2. The device as set forth in claim 1, wherein the first electrode is an anode and the second electrode is a cathode. 3. The device as set forth in claim 1, wherein the substrate conductivity type is N-type. 4. The device as set forth in claim 3, wherein the substrate layer is doped with arsenic. 5. The device as set forth in claim 3, wherein the substrate layer is doped with antimony. 6. The device as set forth in claim 1, wherein the epitaxial layer is of a thickness ranging from about 6 microns to about 15 microns. 7. The device as set forth in claim 1, wherein the substrate resistivity is in the range of about 1E-3 ohm-cm to about 5E-3 ohm-cm. 8. The device as set forth in claim 1, wherein the interior region is produced by ion implantation of phosphorous. 9. The device as set forth in claim 1, wherein the junction layer is produced by ion implantation of boron. 10. The device as set forth in claim 1, wherein the interior P/N junction has an interior breakdown voltage lower than a peripheral breakdown voltage associated with the peripheral P/N junction. 11. A semiconductor device having a first electrode and a second electrode, the device comprising:a semiconductor substrate layer of a substrate conductivity type and of a substrate resistivity;an epitaxial layer grown on the substrate layer, the epitaxial layer having an epitaxial layer conductivity type consistent with the substrate conductivity type, the epitaxial layer having an epitaxial layer resistivity greater than the substrate resistivity, the epitaxial layer having an epitaxial surface opposite to the substrate layer;an interior region of doped semiconductor material having an interior conductivity type consistent with the substrate conductivity type, the interior region extending into the epitaxial layer;a junction layer of a junction conductivity type different from the substrate conductivity type formed in the epitaxial surface, the junction layer forming an interior P/N junction with the interior region and the junction layer forming a peripheral P/N junction with a peripheral portion of the device; anda low contact resistance layer implanted into an exterior surface of the junction layer. 12. The device as set forth in claim 11, wherein the epitaxial layer is of a thickness ranging from about 6 microns to about 15 microns. 13. The device as set forth in claim 11, wherein the substrate resistivity is in the range of about 1E-3 ohm-cm to about 5E-3 ohm-cm. 14. The device as set forth in claim 11, wherein the interior region is produced by ion implantation of phosphorous. 15. The device as set forth in claim 11, wherein the junction layer is produced by ion implantation of baron. 16. The device as set forth in claim 11, wherein the interior P/N junction has an interior breakdown voltage lower than a peripheral breakdown voltage associated with the peripheral P/N junction. 17. A Zener diode h aving an anode and a cathode, the diode having conductive leads electrically coupled to the anode and to the cathode respectively, the diode comprising:a semiconductor base layer of a base layer conductivity type and of a base layer resistivity;a surface layer having a resistivity of at least approximately 5 ohm-cm grown on the base layer, the surface layer having a surface layer conductivity type the same as the base layer conductivity type, the surface layer having a surface layer resistivity greater than the base layer resistivity, the surface layer in contact with the base layer and having an exterior surface opposite to the base layer;an internal region of semiconductor material having an internal region conductivity type consistent with the base layer conductivity type, the internal region extending through the surface layer and into the base layer; anda contact layer of a contact conductivity type opposite to the base layer conductivity type implanted at the exterior surface, the contact layer completing a central semiconductor junction with the internal region and the contact layer completing an edge semiconductor junction with edge portions of the base layer. 18. The diode as set forth in claim 17, wherein the base layer is an epitaxial layer. 19. A consumer electronic product having among other components a Zener diode, the Zener diode comprising:a semiconductor substrate layer of a substrate conductivity type and of a substrate resistivity of approximately 5 ohm-cm;an epitaxial layer grown on the substrate layer, the epitaxial layer having an epitaxial layer conductivity type consistent with the substrate conductivity type, the epitaxial layer having an epitaxial layer resistivity greater than the substrate resistivity, the epitaxial layer having an epitaxial surface opposing the substrate layer;an interior region of doped semiconductor material having an interior conductivity type consistent with the substrate conductivity type, the interior region extending through the epitaxial layer and into the substrate layer; anda junction layer of a junction conductivity type different from the substrate conductivity type formed in the epitaxial surface, the junction layer forming an interior P/N junction with the interior region and the junction layer forming a peripheral P/N junction with a peripheral portion of the device. 20. A semiconductor device having a first electrode and a second electrode, the device comprising:a semiconductor substrate layer of a substrate conductivity type and of a substrate resistivity;an epitaxial layer having a resistivity of at least approximately 5 ohm-cm, grown on the substrate layer, the epitaxial layer having an epitaxial layer conductivity type consistent with the substrate conductivity type, the epitaxial layer having an epitaxial layer resistivity greater than the substrate resistivity, the epitaxial layer having an epitaxial surface opposite to the substrate layer;an interior region of doped semiconductor material having an interior conductivity type consistent with the substrate conductivity type, the interior region extending into the epitaxial layer;a junction layer of a junction conductivity type different from the substrate conductivity type formed in the epitaxial surface, the junction layer forming an interior low breakdown voltage P/N junction with the interior region and the junction layer forming a peripheral high breakdown voltage P/N junction with a peripheral portion of the device; andan oxide layer grown for receiving a metal contact contact layer. 21. The device as set forth in claim 20, wherein said contact layer is an aluminum alloy including approximately 1% silicon.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.