IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0110064
(2000-10-04)
|
우선권정보 |
DE-0048206 (1999-10-07) |
국제출원번호 |
PCT/EP00/09678
(2000-10-04)
|
국제공개번호 |
WO01/25144
(2001-04-12)
|
발명자
/ 주소 |
- Bü
- ttner, Werner
- Hostalek, Martin
- Kan, Ching-Jung
- Lu, Chih-Peng
|
출원인 / 주소 |
|
대리인 / 주소 |
Millen, White, Zelano & Branigan, P.C.
|
인용정보 |
피인용 횟수 :
7 인용 특허 :
7 |
초록
This invention relates to a novel method, which can be carried out according to industrial standards, for producing high-purity hydrochloric acid with a very low particle content, for use in the production of semiconductors.
대표청구항
▼
1. A process for producing a high purity hydrochloric acid for use in the semiconductor industry, comprising:a) expelling hydrogen chloride gas from a hydrochloric acid having a hydrogen chloride content of more than 21% by heating,b) passing the hydrogen chloride gas initially at or slightly above
1. A process for producing a high purity hydrochloric acid for use in the semiconductor industry, comprising:a) expelling hydrogen chloride gas from a hydrochloric acid having a hydrogen chloride content of more than 21% by heating,b) passing the hydrogen chloride gas initially at or slightly above atmospheric pressure through a retention column to remove liquid fractions and a demister operating under adiabatic condition, each comprising fluorinated or perfluorinated polyolefin, andc) passing the gas directly into an absorption column wherein the gas is subsequently dissolved in an ultrapure water in the absorption column to form hydrochloric acid and a hydrogen chloride solution descending from an upper column section is cooled and then fed back into a lower column section to obtain a hydrochloric acid having a concentration >32%. 2. A process according to claim 1, further comprising passing HCl-containing water vapor escaping at the top of the absorption column into a packed column and condensed condensing in a downstream column. 3. A process according to claim 1, further comprising determining the concentration of the hydrogen chloride solution by conductivity measurement. 4. A process according to claim 1, wherein the process is carried out at a pressure in the range from atmospheric pressure to an overpressure of 500 mm of hydrostatic head, and constant conditions. 5. A process according to claim 1, wherein the hydrogen chloride solution is recycled into an absorption column to produce a hydrochloric acid having a concentration of >32%. 6. A process according to claim 1, wherein the hydrogen chloride solution is recycled into the absorption column to produce a hydrochloric acid having a concentration of 35-38%. 7. A process according to claim 1, wherein the hydrochloric acid solution is adjusted to the desired concentration by addition of the ultrapure water. 8. A process according to claim 1, further comprising removing formed particles prior to filling in a suitable transit container by filtration using a 2- to 3-stage filter unit. 9. A process according to claim 8, wherein filtration is effected using in succession filters of decreasing pore size of 1.0-0.05 μm. 10. A process according to claim 1, wherein the process is conducted at a pressure of less than 200 mm of hydrostatic head. 11. A process according to claim 1, wherein the absorption column comprises fluorinated or perfluorinated polyolefin. 12. A process according to claim 1, wherein the fluorinated or perfluorinated polyolefin is polyvinylidene fluoride, perfluoroalkoxy resin, polytetrafluoroethylene or PTFE-TFM. 13. A process according to claim 1, wherein the hydrochloric acid from c) comprises: 4 3 4 4 14. A process according to claim 1, wherein the hydrochloric acid from c) comprises less than 0.05 ppb for each of As, Ba, Be, Bi, Cd, Cr, Co, Cu, Ga, Ge, Au, In, Pb, Li, Mn, Mo, Ni, Nb, K, Ag, Sr, Ta, Tl, V, Zn, and Zr. 15. A process according to claim 8, wherein the filtration occurs after c). 16. A process according to claim 1, wherein the retention column removes liquid droplets of HCl. 17. A process according to claim 1, wherein the process is conducted at 0-500 mm of hydrostatic head.
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