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There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a

There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.

대표청구항 ▼

1. A method of manufacturing an organic semiconductor device which includes a drain electrode, a source electrode, a gate electrode, an organic semiconductor film provided between the drain electrode and the source electrode, and an insulation film provided between the gate electrode and both of the

1. A method of manufacturing an organic semiconductor device which includes a drain electrode, a source electrode, a gate electrode, an organic semiconductor film provided between the drain electrode and the source electrode, and an insulation film provided between the gate electrode and both of the drain electrode and the source electrode as components of the organic semiconductor device, the method comprising:a step of forming the insulation film under an atmospheric pressure environment of 20 kPa to 110 kPa by employing a plasma processing on at least one of the components. 2. The method of claim 1, wherein a reactive gas is excited into plasma by a discharging operation under, the atmospheric pressure condition. 3. The method of claim 1, wherein said organic semiconductor device is fabricated on a supporting substrate; andwherein, after said source electrode and said drain electrode are formed on said supporting substrate, a field-effect active layer, made of said organic semiconductor film, is fabricated between them, and then, said insulation film and said gate electrode are successively formed on said field-effect active layer. 4. The method of claim 3,wherein said organic semiconductor device is fabricated on a supporting substrate; andwherein, after said gate electrode is formed on said supporting substrate, said insulation film is formed so as to cover said gate electrode, and then, said source electrode, said drain electrode and a field-effect active layer, made of said organic semiconductor film, are successively formed on said insulation film. 5. The method of claim 1,wherein said insulation film comprises either oxide compounds or nitride compounds. 6. The method of claim 5,wherein said insulation film comprises anyone of silicon oxide, aluminum oxide, tantalum oxide and titanium oxide. 7. The method of claim 5,wherein said insulation film comprises silicon nitride. 8. The method of claim 1,wherein said organic semiconductor film is made of π-conjugated polymers. 9. The method of claim 1,wherein said organic semiconductor device is fabricated on a supporting substrate; andwherein said supporting substrate is a sheet made of a resin material. 10. The method of claim 9, wherein said sheet is a plastic film. 11. The method of claim 1,wherein said organic semiconductor device is fabricated on a supporting substrate; andwherein said supporting substrate is made of polymers. 12. The method of claim 1,wherein said organic semiconductor device is fabricated on a supporting substrate; and further comprising the steps of:forming said source electrode and said drain electrode on said supporting substrate; andforming said gate electrode on said insulation film. 13. The method of claim 1,wherein said organic semiconductor device is a transistor. 14. The method of claim 1,wherein said organic semiconductor device is fabricated on a supporting substrate being a sheet made of a resin material, andwherein the method further comprises steps in the following order;(1) a step of forming the gate electrode on the supporting substrate;(2) the step of forming the insulation film on the gate electrode under an atmospheric pressure environment of 20 kPa to 110 kPa by employing the plasma processing;(3) a step of forming the organic semiconductor film, the drain electrode and the source electrode on the insulation film. 15. The method of claim of claim 14, wherein in the step (3), the drain electrode and the source electrode are formed on the insulation film, thereafter the organic semiconductor film is formed between the drain electrode and the source electrode. 16. The method of claim of claim 14, wherein in the step (3), the organic semiconductor film is formed on the insulation film, thereafter the drain electrode and the source electrode are formed on the organic semiconductor film. 17. The method of claim of claim 1, wherein the plasma processing comprising steps of:introducing a processing gas between at least two dischargin g electrodes which are placed to face each other with a space under the atmospheric pressure environment;conveying a component of the organic semiconductor device into the space between the two discharging electrodes; andapplying electric voltage between the two discharging electrodes while conveying the component in the space.