A semiconductor component for switching high currents. The semiconductor component includes an LIGBT arrangement having island-shaped p-wells and specially designed cathode regions for improving the latch-up strength of the semiconductor component.
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1. A field-controlled semiconductor component for use as a lateral-insulated gate bipolar transistor, the component comprising:a p-layer;an n-region having at least one p-well and an anode region, the n-region being arranged on a front side of the p-layer and the at least one p-well having a channel
1. A field-controlled semiconductor component for use as a lateral-insulated gate bipolar transistor, the component comprising:a p-layer;an n-region having at least one p-well and an anode region, the n-region being arranged on a front side of the p-layer and the at least one p-well having a channel region controllable by a gate electrode; andat least one strongly n-doped cathode region being embedded in the at least one p-well, wherein:the at least one strongly n-doped cathode region is in a ring shape and runs parallel to an edge of the at least one p-well,the at least one strongly n-doped cathode region has at least one of an interruption and a recess in at least one location, andthe at least one strongly n-doped cathode region of the at least one p-well adjacent to the anode region has an interruption along an entire side facing the anode region. 2. The component of claim 1, wherein:one of the at least one p-well is at least one of rectangular and square in shape; andthe at least one of an interruption and a recess in the cathode region is arranged at at least one corner. 3. The component of claim 1, including a p-channel embedded in the n-region between the at least one p-well and the anode region. 4. The component of claim 1, including:a first group of channel regions controllable by a clamp gate; anda second group of channel regions controllable by a control gate electrically insulated from the clamp gate. 5. The component of claim 4, further comprising:an external inductive load coupled in series;a control circuit having a control input for receiving a control signal; anda clamp circuit coupled to an anode terminal;wherein at least one of the clamp gate and the control gate is controllable as a function of an anode potential and the control signal by using at least one of the clamp circuit and the control circuit. 6. The component of claim 1, further comprising:an insulation arrangement, wherein:the at least one p-well and the anode region are completely surrounded laterally by the insulation arrangement; andthe insulation arrangement having a strongly p-doped wall completely enclosing the anode region, permeating surrounding n-regions, being coupled to the p-layer and being short-circuited with the at least one strongly n-doped cathode region, the strongly p-doped wall having two partial walls in sections for enclosing an intermediate region receiving a positive protection potential. 7. A field-controlled semiconductor component for use as a lateral-insulated gate bipolar transistor, the component comprising:a p-layer;an n-region having at least one p-well and an anode region, the n-region being arranged on a front side of the p-layer and the at least one p-well having a channel region controllable by a gate electrode; andat least one strongly n-doped cathode region being embedded in the at least one p-well, wherein:the at least one strongly n-doped cathode region is in a ring shape and runs parallel to an edge of the at least one p-well,the at least one strongly n-doped cathode region has at least one of an interruption and a recess in at least one location, andthe at least one strongly n-doped cathode region of the at least one p-well adjacent to the anode region has an interruption along an entire side facing the anode region; wherein:the n-region has a strongly p-doped wall permeating surrounding n-regions, being coupled to the p-layer and being short-circuited with the at least one strongly n-doped cathode region, the strongly p-doped wall being part of an insulation arrangement completely laterally surrounding the at least one p-well and the anode region; andthe p-layer is covered on a side opposite the n-region by a strongly p-doped region so that at least part of the strongly p-doped region functions as a part of the insulation arrangement so that holes for electrically insulating a region surrounding the insulation arrangement are drawable off by the strongly p-doped wall and also over the strongly p-doped r egion. 8. The component of claim 7, wherein the strongly p-doped wall has two partial walls in sections for enclosing an intermediate region receiving a positive protection potential. 9. The component of claim 7, wherein:n-dopings and p-dopings of the component are exhanged; andall potentials deviating from a ground reference potential have an opposite polarity. 10. A field-controlled semiconductor component comprising:a p-layer;an n-region having at least one p-well and an anode region, the n-region being arranged on a front side of the p-layer and the at least one p-well having a channel region controllable by a gate electrode; andan n-doped cathode region being embedded in the at least one p-well, wherein:the n-doped cathode region is in a ring shape and runs parallel to an edge of the at least one p-well,the n-doped cathode region has at least one of an interruption and a recess in at least one location, andthe n-doped cathode region of the at least one p-well adjacent to the anode region has an interruption along a side facing the anode region. 11. The component of claim 1, wherein:n-dopings and p-dopings of the component are exchanged; andall potentials deviating from a ground reference potential have an opposite polarity. 12. The component of claim 10, wherein:n-dopings and p-dopings of the component are exchanged; andall potentials deviating from a ground reference potential have an opposite polarity. 13. The component of claim 1, including a p-channel embedded in the n-region between the at least one p-well and the anode region;wherein:one of the at least one p-well is at least one of rectangular and square in shape; andthe at least one of an interruption and a recess in the cathode region is arranged at at least one corner. 14. The component of claim 13, including:a first group of channel regions controllable by a clamp gate; anda second group of channel regions controllable by a control gate electrically insulated from the clamp gate. 15. The component of claim 14, further comprising:an external inductive load coupled in series;a control circuit having a control input for receiving a control signal; anda clamp circuit coupled to an anode terminal;wherein at least one of the clamp gate and the control gate is controllable as a function of an anode potential and the control signal by using at least one of the clamp circuit and the control circuit. 16. The component of claim 1, wherein the gate electrode is made of polysilicon. 17. The component of claim 1, wherein the lateral-insulated gate bipolar transistor is a lateral-vertical-insulated gate bipolar transistor.
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