초록 ▼

Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in

Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.

대표청구항 ▼

1. A method of forming a thin film on a substrate, the method comprising:physically generating vapor from at least one source material, which is within a chamber with a substrate; andintroducing at least one boron containing precursor to the chamber, which combines with the vapor from the at least o

1. A method of forming a thin film on a substrate, the method comprising:physically generating vapor from at least one source material, which is within a chamber with a substrate; andintroducing at least one boron containing precursor to the chamber, which combines with the vapor from the at least one source material to form a boride containing thin film from the combined precursor and source material on the substrate. 2. The method of claim 1, comprising introducing a carrier gas to the chamber prior to, during, or after introducing the precursor. 3. The method of claim 2, wherein the carrier gas contains hydrogen. 4. The method of claim 1, comprising maintaining a pressure of about 100 to about 700 Torr in the chamber during formation of the thin film on the substrate. 5. The method of claim 1, comprising heating the at least one source material to a temperature of about 20° C. to about 900° C. to physically generate vapor of the at least one source material. 6. The method of claim 1, comprising maintaining a distance of no less than several inches between the substrate and the at least one source material while physically generating vapor from the at least one source material. 7. The method of claim 1, wherein the boron containing precursor is boron trichloride, boron tribromide, diborane, trimethylboron, boron trifluoride, or any combination thereof. 8. The method of claim 1, comprising physically generating vapor from a material consisting of magnesium, calcium, titanium, lanthanide, strontium, a lanthanide metal and alloys thereof as the at least one source material. 9. A method of forming a thin film on a substrate, the method comprising:physically generating vapor from at least one source material, which is within a chamber with a substrate; andintroducing at least one precursor to the chamber, which combines with the vapor from the at least one source material to form a thin film from the combined precursor and source material on the substrate while maintaining a pressure of 1 to 1,000 Torr in the chamber during formation of the thin film on the substrate. 10. The method of claim 9, comprising heating the at least one source material to a temperature of 20° C. to 120° C. to physically generate vapor of the at least one material. 11. The method of claim 9, comprising physically generating the vapor of the source material thermally, or by a pulsed laser. 12. The method of claim 9, comprising physically generating magnesium vapor from a magnesium source as the at least one source material, introducing a boron containing compound to the chamber as the precursor, introducing a carrier gas to the chamber along with the boron containing compound, and forming a magnesium boride film as the thin film on the substrate. 13. The method of claim 3, comprising:physically generating magnesium vapor from a magnesium source as the at least one source material;introducing diborane to the chamber as the precursor; and forming a magnesium diboride film as the thin film on the substrate. 14. The method of claim 1, comprising maintaining a distance of about several mm to about several inches between the substrate and the at least one source material while physically generating vapor from the at least one source material. 15. The method of claim 13, comprising forming an epitaxial magnesium diboride thin film as the thin film on the substrate.