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Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material ( 10 ) is placed at one end of a reaction chamber ( 2 ) opposite a seed crystal ( 13 ). Separate heating elements ( 16 and 60; 20 and 62

Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material ( 10 ) is placed at one end of a reaction chamber ( 2 ) opposite a seed crystal ( 13 ). Separate heating elements ( 16 and 60; 20 and 62 ) are positioned at opposite ends of the reaction chamber. The reaction chamber ( 2 ) is placed in a growth chamber ( 26 ). By appropriately controlling the pressure in the growth chamber ( 26 ) and the temperature of the heating elements ( 16, 20 ), including the temperature differential therebetween, a uniaxial temperature gradient is generated in the reaction chamber ( 2 ). In this manner, planar isotherms are generated and a high quality crystal can be grown through a physical vapor transport process.

대표청구항 ▼

1. A method for producing large size, single crystals in a physical vapor transport reactor, said method comprising the steps of:(a) placing a quantity of source material at a first location in a reaction chamber;(b) placing a seed crystal in the reaction chamber at a second location therein and spa

1. A method for producing large size, single crystals in a physical vapor transport reactor, said method comprising the steps of:(a) placing a quantity of source material at a first location in a reaction chamber;(b) placing a seed crystal in the reaction chamber at a second location therein and spaced from the source material;(c) placing a first heating element outside the reaction chamber and adjacent the source material;(d) placing a second element outside the reaction chamber and adjacent the seed crystal;(e) placing the reaction chamber, with the source material and seed crystal therein, and the first and second heating elements, in a growth chamber;(f) evacuating the growth chamber to levels suitable for crystal growth; and(g) heating the first and second heating elements to sufficient levels suitable for crystal growth, and maintaining a temperature difference between the first heating element and the second heating element to provide a uniaxial heat flow within the reaction chamber from the source material to the seed crystal and to provide planar isotherms so as to permit high quality crystal growth from the source material to the seed crystal through a physical vapor transport process. 2. The method of claim 1 wherein the source material and the seed crystal are silicon carbide and the method produces large size, single crystals of silicon carbide. 3. The method of claim 2 wherein the growth chamber is evacuated to between 2 and 30 torr. 4. The method of claim 1 further including the step of surrounding the reaction chamber with a heat prevention means for minimizing radial heat loss from the reaction chamber. 5. The method of claim 4 wherein the heat loss prevention means includes insulation material surrounding the reaction chamber and first and second heating elements adjacent thereto. 6. The method of claim 4 wherein the heat loss prevention means includes a guard heater surrounding the reaction chamber and extending axially along the length of the reaction chamber, and insulation material surrounding the ends of the reaction chamber and the first and second heating elements. 7. The method of claim 1 wherein the first and second heating elements are each induction heating elements having a susceptor adjacent the reaction chamber and an associated induction coil. 8. The method of claim 7 wherein the susceptors and the induction coils of the induction heating elements are all positioned within the growth chamber. 9. The method of claim 7 wherein the susceptors of the induction heating elements are positioned within the growth chamber and the induction coils are positioned outside the growth chamber. 10. The method of claim 1 wherein the temperature of the first heating element is maintained at between 2050 and 2300° C., the temperature of the second heating element is maintained at between 2000 and 2250° C., and a temperature difference between the heating elements is maintained at between 5 and 150° C. 11. The method of claim 1 wherein the temperature of the heating elements is maintained so as to establish a thermal gradient between the seed crystal and the source material of between 5 and 50° C. per centimeter. 12. An apparatus for producing large size, single crystals in a physical vapor transport reactor, said apparatus comprising:(a) a reaction chamber having an axis therethrough and configured to receive a source material at a first end thereof and a seed crystal at a second end of the reaction chamber spaced from and opposite the first end;(b) a planar first heating element positioned outside the reaction chamber, perpendicular to the axis of the reaction chamber and adjacent the source material, such that the first heating element is configured to heat the first end of the reaction chamber which receives the source material;(c) a planar second heating element positioned outside the reaction chamber, perpendicular to the axis of the reaction chamber and adjacent the seed crystal, such t hat the second heating element is configured to heat the second end of the reaction chamber which receives the seed crystal;(d) a heat loss prevention means surrounding the reaction chamber and first and second heaters for minimizing radial heat loss from the reaction chamber;(e) a growth chamber surrounding the reaction chamber, first and second heaters and heat loss prevention means;(f) a heat controller for heating the first and second heating elements to different temperature levels so as to maintain a temperature drop from the first heating element to the second heating element; and(g) a vacuum controller for establishing a desired vacuum in the growth chamber, such that the heat controller and the vacuum controller are operable to provide a uniaxial heat flow from the source material to the seed crystal and planar isotherms so as to establish temperature and vacuum conditions in the reaction chamber to permit high quality crystal growth from the source material to the seed crystal through physical vapor transport. 13. The apparatus of claim 12 wherein the first and second heating elements are each induction heating elements having a susceptor adjacent the reaction chamber and an associated induction coil. 14. The apparatus of claim 13 wherein the susceptors and the induction coils of the induction heating elements are all positioned within the growth chamber. 15. The apparatus of claim 13 wherein the susceptors of the induction heating elements are positioned within the growth chamber and the induction coils are positioned outside the growth chamber. 16. The apparatus of claim 12 wherein the first and second heating elements are each resistance heaters. 17. The apparatus of claim 12 wherein the heat loss prevention means includes insulation material surrounding the reaction chamber and first and second heating elements adjacent thereto. 18. The apparatus of claim 12 wherein the heat loss prevention means includes a guard heater surrounding the reaction chamber and extending axially along the length of the reaction chamber, and insulation material surrounding the ends of the reaction chamber and the first and second heating elements. 19. The apparatus of claim 12 further including means for cooling the growth chamber. 20. The apparatus of claim 19 wherein the growth chamber includes spaced end plates at both an upper and lower end thereof and wherein the apparatus includes means for circulating cooling liquid in the spacing between the spaced end plates at the upper and lower ends. 21. The apparatus of claim 12 wherein the heat controller maintains the first heating element at a temperature of between 2050 and 2300° C., maintains the second heating element at a temperature of between 2000 and 2250° C., and maintains a temperature difference between the heating elements of between 5 and 150° C. 22. The apparatus of claim 21 wherein the heat controller maintains the temperature of the heating elements so as to establish a thermal gradient between the seed crystal and the source material of between 5 and 50° C. per centimeter. 23. The apparatus of claim 12 wherein the large size, single crystals are silicon carbide. 24. The apparatus of claim 12 wherein the vacuum in the growth chamber is between 2 and 30 torr.