초록 ▼

A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI s

A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.

대표청구항 ▼

1. A method of fabricating a semiconductor device, said method comprising the steps of: preparing a single crystal semiconductor substrate having a main surface of a {110} plane; forming an oxide layer in the single semiconductor substrate; adding hydrogen into the single semiconductor substrate f

1. A method of fabricating a semiconductor device, said method comprising the steps of: preparing a single crystal semiconductor substrate having a main surface of a {110} plane; forming an oxide layer in the single semiconductor substrate; adding hydrogen into the single semiconductor substrate from a side of the main surface through the oxide layer to form a hydrogen-containing layer in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a supporting substrate to each other; separating the single crystal semiconductor substrate by a first heat treatment along the hydrogen-containing layer; polishing a single crystal semiconductor layer remaining on the supporting substrate and having a main surface of a {110} plane; and forming an active layer of a thin film transistor by using the single crystal semiconductor layer. 2. A method of fabricating a semiconductor device, said method comprising the steps of: preparing a single crystal semiconductor substrate having a main surface of a {110} plane; first oxidizing the single crystal semiconductor substrate to form a porous semiconductor layer; carrying out a first heat treatment on the porous semiconductor layer in a reducing atmosphere; carrying our an epitaxial growth of a first single crystal semiconductor layer having a main surface of a {110} plane on the porous semiconductor layer; second oxidizing the first single crystal semiconductor layer to form an oxide layer, wherein a remaining portion in the first single crystal semiconductor layer which is not oxidized in the second oxidizing step is defined as a second single crystal semiconductor layer; bonding the single crystal semiconductor substrate and a supporting substrate to each other; polishing the single crystal semiconductor substrate until the porous semiconductor layer is exposed; removing the porous semiconductor layer to expose the second single crystal semiconductor layer; and forming an active layer of a thin film transistor by using the single crystal semiconductor layer over the supporting substrate. 3. A method of fabricating a semiconductor device, said method comprising the steps of: preparing a single crystal semiconductor substrate having a main surface of a {110} plane; adding oxygen ions into the single semiconductor substrate from a side of the main surface to form an oxygen-containing layer in the single crystal semiconductor substrate; converting the oxygen-containing layer into a buried oxide layer by a heat treatment, wherein a single crystal semiconductor layer having a main surface of a {110} plane remains on the buried oxide layer; and patterning the single crystal semiconductor layer to form an active layer of a thin film transistor. 4. A method according to claim 1, wherein the single crystal semiconductor layer is a single crystal silicon layer. 5. A method according to claim 1, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, an EC display device, and a photoelectric conversion device. 6. A method according to claim 1, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection TV, a goggle type display, a car navigation system, a personal computer, and a portable information terminal. 7. A method according to claim 2, wherein the single crystal semiconductor layer is a single crystal silicon layer. 8. A method according to claim 3, wherein the single crystal semiconductor layer is a single crystal silicon layer. 9. A method according to claim 2, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, an EC display device, and a photoelectric conversion device. 10. A method according to claim 3, wherein the semiconductor device is one selected from the group consisting of a liquid crystal d isplay device, an EL display device, an EC display device, and a photoelectric conversion device. 11. A method according to claim 2, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection TV, a goggle type display, a car navigation system, a personal computer, and a portable information terminal. 12. A method according to claim 3, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection TV, a goggle type display, a car navigation system, a personal computer, and a portable information terminal. 13. A method according to claim 1 further comprising the step of: carrying out a second heat treatment at a temperature of not lower than 900° C. 14. A method according to claim 2 further comprising the step of: carrying out a second heat treatment at a temperature of not lower than 900° C.