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Method and apparatus to remove additives and contaminants from a supercritical processing solution 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B01D-015/00
출원번호 US-0099555 (2002-03-13)
발명자 / 주소
  • Humayun, Raashina
  • Joyce, Patrick Christopher
출원인 / 주소
  • Novellus Systems, Inc.
대리인 / 주소
    Beyer Weaver & Thomas LLP
인용정보 피인용 횟수 : 67  인용 특허 : 3

초록

The present invention pertains to methods and apparatus for removal of one or more solutes from a supercritical process solution. Solute additives and contaminants are removed from supercritical processing solutions via a contaminant removal system that is either part of the process vessel itself or

대표청구항

1. An apparatus for removing one or more solutes from a supercritical solution, the apparatus comprising:a process vessel configured to treat semiconductor wafers with the supercritical solution;a supercritical solution generator directly connected to the process vessel;a recirculation loop coupled

이 특허에 인용된 특허 (3)

  1. Whitlock David R. (64 Royal Rd. Belmont MA 02198), Method for separating solutes in gaseous solvents.
  2. Jeffrey J. Spiegelman ; Daniel Alvarez, Jr. ; Peter K. Shogren ; Joshua T. Cook, Self-regenerative process for contaminant removal from liquid and supercritical CO2 fluid streams.
  3. Whitlock David R. (138 Vassal La. Cambridge MA 02138), Separation of solutes in gaseous solvents.

이 특허를 인용한 특허 (67)

  1. Yokomizo,Kenji, Apparatus and method of securing a workpiece during high-pressure processing.
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  3. Varadarajan, Bhadri N.; McLaughlin, Kevin M.; van Schravendijk, Bart, Carbon containing low-k dielectric constant recovery using UV treatment.
  4. Varadarajan, Bhadri; Jiang, Gengwei; Reddy, Sirish K.; Sims, James S., Cascaded cure approach to fabricate highly tensile silicon nitride films.
  5. Varadarajan, Bhadri; Jiang, Gengwei; Reddy, Sirish K.; Sims, James S., Cascaded cure approach to fabricate highly tensile silicon nitride films.
  6. Clark, Shan C.; Ramachandrarao, Vijayakumar S.; Turkot, Jr., Robert B., Cleaning residues from semiconductor structures.
  7. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  8. Draeger, Nerissa S.; Ray, Gary William, Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles.
  9. Draeger,Nerissa S.; Gray,Gary William, Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles.
  10. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
  11. Jones, William D., High pressure fourier transform infrared cell.
  12. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  13. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  14. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  15. McLaughlin, Kevin M.; Pharkya, Amit; Reddy, Kapu Sirish, Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing.
  16. Cho,Seon Mee; Srinivasan,Easwar; Lu,Brian G.; Mordo,David, Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties.
  17. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
  18. Gopinath, Sanjay; Van Cleemput, Patrick A.; Schulberg, Michelle; Ramanathan, Sasangan; Juarez, Francisco; Joyce, Patrick, Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor.
  19. Fox, Keith; Srinivasan, Easwar; Mordo, David; Wu, Qingguo, Method for improving mechanical properties of low dielectric constant materials.
  20. Kelman, Maxim; Shrinivasan, Krishnan; Wang, Feng; Lu, Victor; Chang, Sean; Lu, Guangquan, Method for reducing stress in porous dielectric films.
  21. Markel, Eric J.; Agapiou, Agapios K., Method of maintaining heat transfer capacity in a polymerization reaction system.
  22. Tipton,Adrianne K.; Lu,Brian G.; Van Cleemput,Patrick A.; Schulberg,Michelle T.; Wu,Qingguo; Fu,Haiying; Wang,Feng, Method of porogen removal from porous low-k films using UV radiation.
  23. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  24. Bandyopadhyay, Ananda K.; Cho, Seon Mee; Fu, Haiying; Srinivasan, Easwar; Mordo, David, Method to improve mechanical strength of low-K dielectric film using modulated UV exposure.
  25. Bandyopadhyay, Ananda K.; Cho, Seon-Mee; Fu, Haiying; Srinivasan, Easwar; Mordo, David, Method to improve mechanical strength of low-K dielectric film using modulated UV exposure.
  26. Bandyopadhyay, Ananda K.; Cho, Seon-Mee; Fu, Haiying; Srinivasan, Easwar; Mordo, David, Method to improve mechanical strength of low-K dielectric film using modulated UV exposure.
  27. Bandyopadhyay,Ananda K.; Cho,Seon Mee; Fu,Haiying; Srinivasan,Easwar; Mordo,David, Method to improve mechanical strength of low-k dielectric film using modulated UV exposure.
  28. Wu,Qingguo; Niu,Dong; Wang,Honghong; Fu,Haiying, Methods for improving integration performance of low stress CDO films.
  29. Niu,Dong; Fu,Haiying; Lu,Brian; Wang,Feng, Methods for improving the cracking resistance of low-k dielectric materials.
  30. Niu,Dong; Fu,Haiying; Lu,Brian; Wang,Feng, Methods for improving the cracking resistance of low-k dielectric materials.
  31. Wu,Qingguo; Fu,Haiying; Smith,David C.; Mordo,David, Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups.
  32. Wu,Qingguo; Fu,Haiying; Tang,Xingyuan, Methods for producing low-k CDO films.
  33. Wu,Qingguo; Niu,Dong; Fu,Haiying, Methods for producing low-k CDO films with low residual stress.
  34. Wu, Qingguo; Fu, Haiying; Niu, Dong; Bandyopadhyay, Ananda K.; Mordo, David, Methods for producing low-k carbon doped oxide films with low residual stress.
  35. Fox, Keith; Mars, Carole; Kirkpatrick, Willis; Srinivasan, Easwar, Methods for producing low-stress carbon-doped oxide films with improved integration properties.
  36. Haverkamp, Jason Dirk; Hausmann, Dennis M.; McLaughlin, Kevin M.; Shrinivasan, Krishnan; Rivkin, Michael; Smargiassi, Eugene; Sabri, Mohamed, Multi-station sequential curing of dielectric films.
  37. Haverkamp, Jason; Hausmann, Dennis; McLaughlin, Kevin; Shrinivasan, Krishnan; Rivkin, Michael; Smargiassi, Eugene; Sabri, Mohamed, Multi-station sequential curing of dielectric films.
  38. Shrinivasan, Krishnan; Rivkin, Michael; Smargiassi, Eugene; Sabri, Mohamed, Multi-station sequential curing of dielectric films.
  39. Shrinivasan, Krishnan; Rivkin, Michael; Smargiassi, Eugene; Sabri, Mohamed, Multi-station sequential curing of dielectric films.
  40. Chen,Jian; Rajagopal,Ramasubramaniam, Nanocomposites and methods thereto.
  41. Wang,Feng; Schulberg,Michelle T.; Sun,Jianing; Humayun,Raashina; Van Cleemput,Patrick A., Plasma detemplating and silanol capping of porous dielectric films.
  42. Chen, Jian; Liu, Haiying, Polymer and method for using the polymer for noncovalently functionalizing nanotubes.
  43. Chen,Jian; Liu,Haiying, Polymer and method for using the polymer for noncovalently functionalizing nanotubes.
  44. Chen, Jian; Liu, Haiying, Polymer and method for using the polymer for solubilizing nanotubes.
  45. Chen,Jian; Liu,Haiying, Polymer and method for using the polymer for solubilizing nanotubes.
  46. Ait Haddou,Hassan; Rutkofsky,Marni Loriel, Polymers for enhanced solubility of nanomaterials, compositions and methods therefor.
  47. Wuester,Christopher D., Process flow thermocouple.
  48. Varadarajan, Bhadri N., Progressive UV cure.
  49. Subramonium, Pramod; Fang, Zhiyuan; Henri, Jon, Pulsed PECVD method for modulating hydrogen content in hard mask.
  50. Subramonium,Pramod; Fang,Zhiyuan; Henri,Jon, Pulsed PECVD method for modulating hydrogen content in hard mask.
  51. Smargiassi, Eugene; Lau, Stephen Yu-Hong; Kamian, George D.; Xi, Ming, Purging of porogen from UV cure chamber.
  52. Smargiassi, Eugene; Lau, Stephen Yu-Hong; Kamian, George D.; Xi, Ming, Purging of porogen from UV cure chamber.
  53. Smargiassi, Eugene; Lau, Stephen Yu-Hong; Kamian, George D.; Xi, Ming, Purging of porogen from UV cure chamber.
  54. Smargiassi, Eugene; Lau, Stephen Yu-Hong; Kamian, George D.; Xi, Ming, Purging of porogen from UV cure chamber.
  55. Smargiassi, Eugene; Lau, Stephen Yu-Hong; Kamian, George D.; Xi, Ming, Purging of porogen from UV cure chamber.
  56. Tarafdar, Raihan M.; Papasouliotis, George D.; Rulkens, Ron; Hausmann, Dennis M.; Tobin, Jeff; Tipton, Adrianne K.; Nie, Bunsen, Sequential deposition/anneal film densification method.
  57. Shrinivasan, Krishna; Wang, Feng; Kamian, George; Gentile, Steve; Yam, Mark, Single-chamber sequential curing of semiconductor wafers.
  58. Chen,Jian; Dyer,Mark J., System and method for manipulating nanotubes.
  59. Varadarajan, Bhadri; Chang, Sean; Sims, James S.; Lu, Guangquan; Mordo, David; Ilcisin, Kevin; Pandit, Mandar; Carris, Michael, Tensile dielectric films using UV curing.
  60. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  61. Varadarajan, Bhadri; Antonelli, George A.; van Schravendijk, Bart, UV and reducing treatment for K recovery and surface clean in semiconductor processing.
  62. van Schravendijk, Bart; Crew, William, UV treatment for carbon-containing low-k dielectric repair in semiconductor processing.
  63. van Schravendijk, Bart; Cho, Seon Mee, UV treatment of STI films for increasing tensile stress.
  64. van Schravendijk, Bart; Denisse, Christian, UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement.
  65. van den Hoek, Willibrordus Gerardus Maria; Draeger, Nerissa S.; Humayun, Raashina; Hill, Richard S.; Sun, Jianing; Ray, Gary, VLSI fabrication processes for introducing pores into dielectric materials.
  66. van den Hoek, Willibrordus Gerardus Maria; Draeger, Nerissa S.; Humayun, Raashina; Hill, Richard S.; Sun, Jianing; Ray, Gary William, VLSI fabrication processes for introducing pores into dielectric materials.
  67. van den Hoek,Willibrordus Gerardus Maria; Draeger,Nerissa S.; Humayun,Raashina; Hill,Richard S.; Sun,Jianing; Ray,Gary William, VLSI fabrication processes for introducing pores into dielectric materials.
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