METHOD FOR REDUCING THE CONTACT RESISTANCE IN ORGANIC FIELD-EFFECT TRANSISTORS BY APPLYING A REACTIVE INTERMEDIATE LAYER WHICH DOPES THE ORGANIC SEMICONDUCTOR LAYER REGION-SELECTIVELY IN THE CONTACT
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0285049
(2002-10-31)
|
우선권정보 |
DE-0053656 (2001-10-31) |
발명자
/ 주소 |
- Klauk, Hagen
- Schmid, Gü
- nter
- Kriem, Tarik
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
10 인용 특허 :
1 |
초록
▼
A semiconductor device is fabricated and contains a first body made of an organic semiconductor material and a second body made of an electrically conductive contact material, that form a common contact area. First, a body is produced on a substrate, which body may be composed of the contact materia
A semiconductor device is fabricated and contains a first body made of an organic semiconductor material and a second body made of an electrically conductive contact material, that form a common contact area. First, a body is produced on a substrate, which body may be composed of the contact material or the organic semiconductor material, and an intermediate layer is applied thereon, the intermediate layer containing a reactive dopant. Afterward, a body made of the organic semiconductor material or the contact material is fabricated on the intermediate layer. The dopant contained in the intermediate layer effects a region-selective doping of the organic semiconductor material and, as a consequence, a significant reduction of the contact resistance for the transition of charge carriers between the contact material and the organic semiconductor material.
대표청구항
▼
1. A method for fabricating a semiconductor device, which comprises the steps of:providing a first body;providing a dopant on at least one section of an area of the first body; anddepositing a second body on the section of the area of the first body resulting in a formation of a contact area, one of
1. A method for fabricating a semiconductor device, which comprises the steps of:providing a first body;providing a dopant on at least one section of an area of the first body; anddepositing a second body on the section of the area of the first body resulting in a formation of a contact area, one of the first and second bodies formed from an organic semiconductor material and another of the first and second bodies formed from an electrically conductive contact material, a region-selective doping being introduced at the contact area by the dopant into regions of the organic semiconductor material adjoining the contact area. 2. The method according to claim 1, which comprises applying the dopant as a layer on the one section of the area of the first body. 3. The method according to claim 2, which comprises forming the layer as a monomolecular layer. 4. The method according to claim 1, which comprises:forming the first body from the electrically conductive contact material resulting in the one section of the area of the first body being activated; andforming the second body from the electrically organic semiconductor material, on at least the one section of the area of the first body, to form the contact area between the first and second bodies, and activated sections of the area of the first body introducing a region-selective doping into regions of the organic semiconductor material adjoining the contact area. 5. The method according to claim 4, which comprises doping the first body constructed from the electrically conductive contact material with the dopant, and, after a formation of the contact area, the dopant diffusing from the first body formed from the electrically conductive contact material and is doped with the dopant into regions adjacent to the contact area of the second body constructed from the organic semiconductor material and effecting a stationary doping of the organic semiconductor material in the regions adjoining the contact area. 6. The method according to claim 5, which comprises forming the dopant as an acid and the electrically conductive contact material having strongly basic properties. 7. The method according to claim 1, which comprises forming the dopant as one of a protonic acid and a base which protonates or deprotonates the organic semiconductor material with a salt formation. 8. The method according to claim 1, which comprises forming the dopant as one of an oxidizing agent and a reducing agent for oxidizing or reducing the organic semiconductor material. 9. The method according to claim 1, wherein the dopant has complexing properties. 10. The method according to claim 1, wherein the dopant forms a covalent bond with the organic semiconductor material. 11. The method according to claim 1, wherein the dopant has a group with which the dopant coordinates to sections of the area of the body constructed from the electrically conductive contact material. 12. The method according to claim 4, which comprises applying an at least bifunctional ligand to at least sections of an area of the first body which is constructed from the electrically conductive contact material, the bifunctional ligand having a functional group for coordination to the area of the first body which is constructed from the electrically conductive contact material, and a functional group which coordinates to the dopant, and the dopant being coordinated to the bifunctional ligand. 13. The method according to claim 1, which comprises forming the semiconductor device to be part of an organic field-effect transistor having a source electrode, a drain electrode and a path made of the organic semiconductor material disposed between the source electrode and the drain electrode, at least one of the source electrode and the drain electrode forming the body constructed from the electrically conductive contact material and the path made of the organic semiconductor material forming the body constructed from the organic semiconductor material.
이 특허에 인용된 특허 (1)
-
Tommie W. Kelley ; Dawn V. Muyres ; Mark J. Pellerite ; Timothy D. Dunbar ; Larry D. Boardman ; Terrance P. Smith, Surface modifying layers for organic thin film transistors.
이 특허를 인용한 특허 (10)
-
Crofton-Sleigh, Richard; Haas, Leslie M., Carrier for bottles, cans, beverages, food containers, or the like.
-
Crofton-Sleigh, Richard; Haas, Leslie M., Carrier for bottles, cans, beverages, food containers, or the like.
-
Kelber, Jeffry A.; Lei, Jipu; Magtoto, Noel P.; Rudenja, Sergei, Conductor structures including penetrable materials.
-
Arai, Tadashi; Saito, Shinichi, Manufacturing method of semiconductor device having organic semiconductor film.
-
Dimmler,Klaus; Rotzoll,Robert R., Non-quasistatic phase lock loop frequency divider circuit.
-
Kang, Minsoo; Son, Sae Hwan; Choi, Hyeon; Jang, Jun Gi; Jeon, Sang Young; Kim, Yeon Hwan; Yoon, Seokhee; Han, Young Kyu, Organic electronic device.
-
Nomoto, Kazumasa; Yoneya, Nobuhide; Ohe, Takahiro, Organic thin film transistor, production method thereof, and electronic device.
-
Chabinyc, Michael L.; Lujan, Rene A; Arias, Ana Claudia; Ho, Jackson H., Organic thin-film transistor backplane with multi-layer contact structures and data lines.
-
Wu, Yiliang; Ong, Beng S.; Liu, Ping, Organic thin-film transistors.
-
Maeda, Takahiko; Kawakami, Haruo; Kato, Hisato; Sekine, Nobuyuki; Kato, Kyoko, Process for producing thin film field-effect transistor.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.