초록 ▼

A technique for forming a film of crystalline material, preferably silicon. The technique creates a sandwich structure with a weakened region at a selected depth underneath the surface. The weakened region is a layer of porous silicon with high porosity. The high porosity enclosed layer is formed by

A technique for forming a film of crystalline material, preferably silicon. The technique creates a sandwich structure with a weakened region at a selected depth underneath the surface. The weakened region is a layer of porous silicon with high porosity. The high porosity enclosed layer is formed by (1) forming a porous silicon layer with low porosity on surface of the substrate, (2) epitaxial growth of a non-porous layer over the low-porous layer (3) increasing of porosity of the low-porous layer making the said layer hi-porous, (4) cleaving the semiconductor substrate at said high porous layer. The porosity of the buried low-porous layer is increased by hydrogenation techniques, for example, by processing in hydrogen plasma. The process is preferentially used to produce silicon-on-insulator wafers.

대표청구항 ▼

1. A method comprising:forming a porous layer with low porosity on a single crystalline substrate growing the single-crystal layer on the surface of said porous layer then increasing of porosity of the said porous layer by hydrogenation of the substrate in hydrogen plasmaseparating said non-porous l

1. A method comprising:forming a porous layer with low porosity on a single crystalline substrate growing the single-crystal layer on the surface of said porous layer then increasing of porosity of the said porous layer by hydrogenation of the substrate in hydrogen plasmaseparating said non-porous layer from said substrate by cleaving the wafer along the layer with increased porosity. 2. The method of claim 1 wherein said plasma processing comprises RF hydrogen plasma or DC hydrogen plasma. 3. The method of claim 2 wherein said plasma hydrogenation is performed at hydrogen platelet growth conditions. 4. The method of claim 3 wherein said plasma hydrogenation is performed at temperature 250° C. or less for a duration of at least 30 minutes. 5. The method of claim 2 wherein said plasma hydrogenation is performed to achieve pore growth conditions. 6. The method of claim 4 wherein said plasma hydrogenation is performed at temperature in a range 250° C. to 350° C. during at least 10 minutes.