초록 ▼

A substrate processing apparatus consists of: a processing container; a first processing gas supply unit and a second processing gas supply unit, countering each other, prepared on both sides of a substrate-to-be-processed to the processing container; and a first slit-shaped exhaust opening and a se

A substrate processing apparatus consists of: a processing container; a first processing gas supply unit and a second processing gas supply unit, countering each other, prepared on both sides of a substrate-to-be-processed to the processing container; and a first slit-shaped exhaust opening and a second slit-shaped exhaust opening provided one on each side of the substrate-to-be-processed approximately perpendicular to the flow of the first processing gas and the second processing gas, countering the first processing gas supply unit and the second processing gas supply unit, respectively. The first processing gas is passed along the surface of the substrate-to-be-processed from the first processing gas supply unit to the first exhaust opening, and is adsorbed by the surface of the substrate-to-be-processed. Then, the second processing gas is passed along the surface of the substrate-to-be-processed from the second processing gas supply unit to the second exhaust opening, the second processing gas reacts with molecules of the first processing gas previously adsorbed, and a high dielectric film of a single-molecule layer is formed.

대표청구항 ▼

1. A substrate processing apparatus comprising:a processing container,a substrate holding stand for holding a substrate-to-be-processed provided in the processing container,a first processing gas supply unit provided on a first side of the substrate holding stand in the processing container for supp

1. A substrate processing apparatus comprising:a processing container,a substrate holding stand for holding a substrate-to-be-processed provided in the processing container,a first processing gas supply unit provided on a first side of the substrate holding stand in the processing container for supplying a first processing gas such that the first processing gas flows from the first side to a second side that counters the first side, the first processing gas flowing along the surface of the substrate-to-be-processed on the substrate holding stand,a first exhaust opening provided on the second side of the substrate holding stand in the processing container,a second processing gas supply unit provided on the second side of the substrate holding stand in the processing container for supplying a second processing gas that is different from the first processing gas such that the second processing gas flows from the second side to the first side, the second processing gas flowing along the surface of the substrate-to-be-processed on the substrate holding stand,a second exhaust opening provided on the first side of the substrate holding stand in the processing container,a first exhaust volume adjustment valve mechanism that connects the first exhaust opening to an exhaust apparatus, anda second exhaust volume adjustment valve mechanism that connects the second exhaust opening to the exhaust apparatus. 2. The substrate processing apparatus as claimed in claim 1, wherein the processing container further comprises an outer container, and an inner container prepared in the inside of the outer container, the substrate holding stand being prepared in the inner container. 3. The substrate processing apparatus as claimed in claim 2, wherein the substrate holding stand is capable of moving vertically, and the inner container comprises an inner container extension part that surrounds a concave area in which the substrate holding stand vertically moves. 4. The substrate processing apparatus as claimed in claim 3, wherein the surface of the substrate-to-be-processed substantially corresponds to the bottom of the inner processing container when the substrate holding stand is elevated the highest. 5. The substrate processing apparatus as claimed in claim 3, wherein a guard ring is prepared along the circumference of the substrate holding stand so that the perimeter edge of the substrate-to-be-processed is surrounded, the guard ring having a perimeter corresponding to the inner circumference of the inner container extension part, and a substantially constant clearance is formed between the perimeter of the guard ring and the inner circumference of the inner container extension part. 6. The substrate processing apparatus as claimed in claim 2, wherein a gas in the space between the outer container and the inner container is exhausted independently of the inner container. 7. The substrate processing apparatus as claimed in claim 2, wherein the inner container is made of quartz. 8. The substrate processing apparatus as claimed in claim 2, the inner container further comprising a bottom part consisting of a flat quartz plate and a quartz cover prepared on the bottom such that the bottom is covered, with the substrate-to-be-processed on the substrate holding stand being exposed in an opening provided to the quartz plate, and the exposed surface of the substrate-to-be-processed forms a plane substantially in agreement with the surface of the quartz plate. 9. The substrate processing apparatus as claimed in claim 2, further comprising a heating mechanism that is prepared in the space between the inner container and the outer container. 10. The substrate processing apparatus as claimed in claim 1, wherein the substrate holding stand is equipped with a heating mechanism. 11. The substrate processing apparatus as claimed in claim 1, further comprising a rotation mechanism for rotating the substrate holding stand. 12. The substrate processing apparatus as cla imed in claim 11, wherein the rotation mechanism comprises a shaft for holding the substrate holding stand, and a magnetic seal that holds the shaft rotation-free, the magnetic seal holding the shaft vertical-movement-free in a space surrounded by bellows, and the space being decompressed to a higher vacuum state than the inside of the inner container. 13. The substrate processing apparatus as claimed in claim 1, wherein the first exhaust opening comprises a first slit that extends in a direction approximately perpendicular to the flowing direction of the first processing gas, and the second exhaust opening comprises a second slit that extends in a direction approximately perpendicular to the flowing direction of the second processing gas. 14. The substrate processing apparatus as claimed in claim 1, wherein the first exhaust opening comprises a first slit that extends in a direction approximately perpendicular to the flowing direction of the first processing gas, and the second exhaust opening comprises a second slit that extends in a direction approximately perpendicular to the flowing direction of the second processing gas, wherein exhaust from the processing container is carried out in a direction approximately perpendicular to the flow direction of the first processing gas and the second processing gas, and the extension direction of the first slit and the second slit. 15. The substrate processing apparatus as claimed in claim 13, wherein the first slit and the second slit have substantially a constant slit width. 16. The substrate processing apparatus as claimed in claim 13, wherein slit width at the central part of each of the first slit and the second slit is different from both ends of the slit. 17. The substrate processing apparatus as claimed in claim 13, wherein each of the first slit and the second slit is covered by a cover plate, and a plurality of openings are formed to the cover plate in the longitudinal direction of the slit. 18. The substrate processing apparatus as claimed in claim 17, wherein the dimensions of the openings at the central part of the slit are different from both ends of the slit. 19. The substrate processing apparatus as claimed in claim 17, wherein the density of the openings of the cover plate at the central part of the slit is different from both ends of the slit. 20. The substrate processing apparatus as claimed in claim 1, wherein the first processing gas supply unit comprises a first storing unit for storing the first processing gas, and a first discharging opening consisting of a flat slit provided to the first storing unit, and extended in a direction approximately perpendicular to the direction of the flow of the first processing gas, and the second processing gas supply unit comprises a second storing unit for storing the second processing gas, and a second discharging opening consisting of a flat slit provided to the second storing unit, extended in a direction approximately perpendicular to the direction of the flow of the second processing gas. 21. The substrate processing apparatus as claimed in claim 20, wherein the width of the flat slit at the central part of the first discharging opening and the second discharging opening differs from both ends. 22. The substrate processing apparatus as claimed in claim 20, wherein a diffusion plate that has a plurality of openings is provided to each of the first discharging opening and the second discharging opening, and the dimensions of the openings at the central part of the diffusion plate differ from the dimensions on both ends of the diffusion plate. 23. The substrate processing apparatus as claimed in claim 20, wherein a diffusion substrate that has a plurality of openings is provided to each of the first discharging opening and the second discharging opening, and the density of the openings at the central part of the diffusion plate differs from both ends. 24. The substrate processing apparatus as claimed in claim 2, wherein a sp ace between the external container and the internal container is depressurized to a higher vacuum than the inside of the internal container. 25. The substrate processing apparatus as claimed in claim 1, wherein the first processing gas is supplied to the first processing gas supply unit from a first material container through a first material switching valve, and the second processing gas is supplied to the second processing gas supply unit from a second material container through a second material switching valve. 26. The substrate processing apparatus as claimed in claim 25, wherein the first exhaust opening comprises: a first slit that extends in a direction approximately perpendicular to the flow of the first processing gas; the second exhaust opening comprises a second slit that extends in a direction approximately perpendicular to the flow of the second processing gas; the first exhaust volume adjustment valve mechanism, further comprising a pair of exhaust volume adjustment valves that are controlled to substantially the same aperture, and connected to both ends of the first slit; and the second exhaust volume adjustment valve mechanism, further comprising a pair of exhaust volume adjustment valves that are controlled to substantially the same aperture, and connected to both ends of the second slit. 27. The substrate processing apparatus as claimed in claim 25, wherein the first exhaust opening comprises a first slit that extends in a direction approximately perpendicular to the flow of the first processing gas, the second exhaust opening comprises a second slit that extends in a direction approximately perpendicular to the flow of the second processing gas, and the first exhaust volume adjustment valve mechanism is commonly connected to both ends of the first slit through a duct. 28. The substrate processing apparatus as claimed in claim 27, wherein the second exhaust volume adjustment valve mechanism is commonly connected to the both ends of the second slit through a duct. 29. The substrate processing apparatus as claimed in claim 26, wherein the substrate holding stand is prepared vertical-movement free between a processing position that is the most elevated position and a substrate in-and-out position that is the least elevated position, and the substrate-to-be-processed is taken in-to and out from the processing container along a substrate transportation way that passes through the space between the pair of exhaust volume adjustment valves that constitute the first exhaust volume adjustment valve mechanism. 30. The substrate processing apparatus as claimed in claim 25, further comprising a control unit for controlling the first material switching valve and the second material switching valve, wherein the control unit controls the first material switching valve and the second material switching valve such that a supply of the second processing gas to the processing container from the second processing gas supply unit is intercepted when the first processing gas supply unit supplies the first processing gas to the processing container, and such that a supply of the first processing gas to the processing container from the first processing gas supply unit is intercepted when the second processing gas supply unit supplies the second processing gas to the processing container. 31. The substrate processing apparatus as claimed in claim 30, wherein the control unit controls such that an aperture of the valve opening of the first exhaust volume adjustment valve mechanism is greater than an aperture of the valve opening of the second exhaust volume adjustment valve mechanism when the first processing gas supply unit supplies the first processing gas to the processing container, and such that the aperture of the valve opening of the second exhaust volume adjustment valve mechanism is greater than the aperture of the valve opening of the first exhaust volume adjustment valve mechanism when the second processing gas supply uni t supplies the second processing gas to the processing container. 32. The substrate processing apparatus as claimed in claim 31, wherein the aperture of the valve opening of the second exhaust volume adjustment valve mechanism is set at less than 3% when the first processing gas is supplied to the processing container, and the aperture of the valve opening of the first exhaust volume adjustment valve mechanism is set at less than 3% when the second processing gas is supplied to the processing container. 33. The substrate processing apparatus as claimed in claim 31, wherein the second exhaust volume adjustment valve mechanism is closed when the first processing gas is supplied to the processing container, and the first exhaust volume adjustment valve mechanism is closed when the second processing gas is supplied to the processing container. 34. The substrate processing apparatus as claimed in claim 31, wherein each of the first exhaust volume adjustment valve mechanism and the second exhaust volume adjustment valve mechanism is fully opened or opened such that a sufficient exhaust volume is obtained when the first processing gas is intercepted and before the second processing gas is supplied to the processing container, and when the second processing gas is intercepted. 35. The substrate processing apparatus as claimed in claim 1, wherein the first processing gas supply unit supplies an inactive gas to the processing container while the supply of the first processing gas is intercepted, and the second processing gas supply unit supplies an inactive gas to the processing container while the supply of the second processing gas is intercepted. 36. The substrate processing apparatus as claimed in claim 25, wherein the first material switching valve is connected to a first inactive gas line and a first exhaust line; the second material switching valve is connected to a second inactive gas line and a second exhaust line; the first material switching valve passes the inactive gas in the first inactive gas line to the first exhaust line when supplying the first processing gas to the processing container, and passes the first processing gas to the first exhaust line and supplies the inactive gas in the first inactive gas line to the processing container when the supply of the first processing gas to the processing container is intercepted; and the second material switching valve passes the inactive gas in the second inactive gas line to the second exhaust line when the second processing gas is supplied to the processing container, and passes the second processing gas to the second exhaust line and supplies the inactive gas in the second inactive gas line to the processing container when the supply of the second processing gas to the processing container is intercepted. 37. The substrate processing apparatus as claimed in claim 25, wherein each of the first exhaust volume adjustment valve mechanism and the second exhaust volume adjustment valve mechanism is fully opened or opened such that a sufficient exhaust is obtained, when the first material switching valve supplies the first inactive gas to the processing container, and the second material switching valve supplies the second inactive gas to the processing container. 38. The substrate processing apparatus as claimed in claim 30, wherein the first material container generates the first processing gas by reaction gas being supplied. 39. The substrate processing apparatus as claimed in claim 30, further comprising a flux control unit for increasing the flux of the first processing gas when the first processing gas is supplied to the processing container in comparison with when the first processing gas is intercepted, the flux control unit being provided between the first material container and the first switching valve. 40. The substrate processing apparatus as claimed in claim 25, further comprising a space for temporarily storing the first processing gas, which is prepared between th e first material container and the first switching valve. 41. The substrate processing apparatus as claimed in claim 40, further comprising a pressure gauge provided to said space, the first processing gas being stored at predetermined pressure in said space. 42. The substrate processing apparatus as claimed in claim 40, further comprising a mass flux controller provided between the first material container and said space such that the first processing gas is stored in said space in predetermined quantity corresponding to accumulated flux based on the flux detected by the mass flux controller. 43. The substrate processing apparatus as claimed in claim 1, wherein the processing container is structured flat, and the first processing gas supply unit and the second processing gas supply unit supply the first processing gas and the second processing gas, respectively, as a flow in the shape of a sheet, and in parallel to the main surface of the substrate-to-be-processed. 44. The substrate processing apparatus as claimed in claim 1, wherein the processing container is structured flat, and the distance between the main surface of the substrate-to-be-processed on which the gas flows in the shape of a sheet in parallel and the bottom of the processing container is variable. 45. The substrate processing apparatus as claimed in claim 1, wherein the processing container is structured flat, and the distance between the main surface of the substrate-to-be-processed on which the gas flows in the shape of a sheet in parallel and the bottom of the processing container is set short after the substrate-to-be-processed is transported. 46. The substrate processing apparatus as claimed in claim 1, wherein each of the first exhaust opening and the second exhaust opening comprises an opening in the shape of a slit that extends in a direction approximately perpendicular to the flow of the first processing gas and the second processing gas, respectively. 47. The substrate processing apparatus as claimed in claim 1, wherein the first processing gas and the second processing gas are mixed with an inactive gas. 48. The substrate processing apparatus as claimed in claim 1, further comprising a third processing gas supply unit provided on the first side of the substrate holding stand in the processing container for supplying a third processing gas to the surface of the substrate-to-be-processed on the substrate holding stand so that the third processing gas flows toward the second side along the surface of the substrate-to-be-processed. 49. The substrate processing apparatus as claimed in claim 48, further comprising a third material container and a third material switching valve, wherein the third processing gas supply unit supplies the third processing gas from the third material container through the third material switching valve, wherein the control unit controls the first material switching valve, the second material switching valve, and the third material switching valve such that supply of the second processing gas to the processing container from the second processing gas supply unit and supply of the third processing gas to the processing container from the third processing gas supply unit are intercepted when the first processing gas supply unit supplies the first processing gas to the processing container, such that supply of the first processing gas to the processing container from the first processing gas supply unit and supply of the third processing gas to the processing container from the third processing gas supply unit are intercepted when the second processing gas supply unit supplies the second processing gas to the processing container, and such that supply of the first processing gas to the processing container from the first processing gas supply unit and supply of the second processing gas to the processing container from the second processing gas supply unit are intercepted when the third processing gas supply unit supplies the thi rd processing gas to the processing container. 50. The substrate processing apparatus as claimed in claim 48, wherein a control unit controls the aperture of the valve opening of the first exhaust volume adjustment valve to be greater than the aperture of the valve opening of the second exhaust volume adjustment valve while the third processing gas supply unit supplies the third processing gas to the processing container. 51. The substrate processing apparatus as claimed in claim 48, wherein the third processing gas supply unit supplies an inactive gas to the processing container when the supply of the third processing gas to the processing container is intercepted. 52. The substrate processing apparatus as claimed in claim 48, wherein the third processing gas supply unit supplies the third processing gas from the first side to the second side as a flow in the shape of a sheet parallel to the main surface of the substrate-to-be-processed. 53. The substrate processing apparatus as claimed in claim 48, wherein the third material switching valve is connected to a third inactive gas line and a third exhaust line, the third material switching valve passes the inactive gas in the third inactive gas line to the third exhaust line when the third processing gas is supplied to the processing container, and passes the third processing gas to the third exhaust line, and supplies the inactive gas in the third inactive gas line to the processing container when the third processing gas is intercepted. 54. The substrate processing apparatus as claimed in claim 48, wherein the third processing gas is mixed with an inactive gas. 55. The substrate processing apparatus as claimed in claim 1, further comprising: a third processing gas supply unit provided on a third side of the substrate holding stand in the processing container, the third processing gas supply unit supplying a third processing gas to the surface of the substrate-to-be-processed on the substrate holding stand, the third processing gas flowing along the surface of the substrate-to-be-processed to a fourth side that is opposite to the third side; and a fourth exhaust opening provided on the third side of the substrate holding stand in the processing container. 56. The substrate processing apparatus as claimed in claim 55, further comprising: a fourth processing gas supply unit provided on the fourth side of the substrate holding stand in the processing container, the fourth processing gas supply unit supplying a fourth processing gas to the surface of the substrate-to-be-processed on the substrate holding stand, the fourth processing gas flowing from the fourth side to the third side along the surface of the substrate-to-be-processed; and a fourth exhaust opening provided on the third side of the substrate holding stand in the processing container. 57. The substrate processing apparatus as claimed in claim 1, wherein the first processing gas is for forming a film, and the second processing gas is for oxidization. 58. The substrate processing apparatus as claimed in claim 1, wherein the first processing gas is chosen from the group that consists of ZrCl 4 , ZrBr 4 , Zr(I—OC 3 H 7 ) 4 , Zr(n-OC 4 H 9 ) 4 , Zr(t-OC 4 H 9 ) 4 , Zr(AcAc) 4 , Zr(DPM) 4 , Zr(O-iPr)(DPM) 3 , Zr(HFA) 4 , Zr(BH 4 ) 4 , Zr(N(CH 3 ) 2 ) 4 and Zr(N(C 2 H 5 ) 2 ) 4 , the group consisting of (C 2 H 5 ) 2 AlN 3 , (C 2 H 5 ) 2 AlBr, (C 2 H 5 ) 2 AlCl, (C 2 H 5 ) 2 AlI, (I—C 4 H 9 )AlH, (CH 3 ) 2 AlNH 2 , (CH 3 ) 2 AlCl, (CH 3 ) 2 AlH, (CH 3 ) 2 AlH:N(CH 3 ) 2 C 2 H 5 , AlH 3 :N(CH 3 ) 2 C 2 H 5 , Al(C 2 H 5 )Cl 2 , Al(CH 3 )Cl 2 , Al(C 2 H 5 ) 3 , Al(I—C 4 H 9 ), Al(I—OC 4 H 9 ) 3 , AlCl 3 , Al(CH 3 ) 3 , AlH 3 :N(CH 3 ) 3 , Al(AcAc) 3 and Al(DPM) 3 , Al(HFA) 3 , Al(OC 2 H 5 ) 3 , Al(I—C 4 H 9 ) 3 , Al(I—OC 3 H 7 ) 3 , Al(OCH 3 ) 3 , Al(n-OC 4 H 9 ) 3 , Al(n-OC 3 H 7 ) 3 , Al(sec- OC 4 H 9 ) 3 , Al(t-OC 4 H 9 ) 3 and AlBr 3 , the group consisting of Y(AcAc) 3 , Y(DPM) 3 , Y(O-iPr)(DPM) 2 , Y(HFA) 3 , Cp 3 Y, the group consisting of HfCl 4 , HfBr 4 , Hf(AcAc) 4 , Hf[N(C 2 H 5 ) 2 ] 4 , Hf[N(CH 3 ) 2 ] 4 , Hf(DPM) 4 , Hf(O-iPr)(DPM) 3 , and Hf(HFA) 4 , the group consisting of TiCl 4 , TiBr 4 , TiI 4 , Ti(I—OCH 3 ) 4 , Ti(OC 2 H 5 ) 4 , Ti(I—OC 3 H 7 ) 4 , Ti(n-OC 3 H 7 ) 4 , Ti(n-OC 4 H 9 ) 4 , Ti(AcAc) 4 , Ti(AcAc) 2 Cl 2 , Ti(DPM) 4 , Ti(DPM) 2 Cl 2 , Ti(O-iPr)(DPM) 3 , and Ti(HFA) 2 Cl 2 , and the group consisting of LaBr 3 , LaI 3 , La(OCH 3 ) 3 , La(OC 2 H 5 ) 3 , La(I—OC 3 H 7 ) 2 , Cp 3 La, MeCp 3 La, La(DPM) 3 , La(HFA) 3 , La(AcAc) 3 , Cp(C8H8)Ti, Cp 2 Ti[N(CH 3 ) 2 ] 2 , Cp 2 TiCl 2 , (C 2 H 5 )Ti(N 3 ) 2 , Ti[N(C 2 H 5 ) 2 ] 4 , and Ti[N(CH 3 ) 2 ] 4 , and the second processing gas is chosen from the group that consists of oxygen radical atoms, oxygen radical molecules, O 3 , O 2 , N 2 O, NO, NO 2 , H 2 O 2 , H 2 O and D 2 O. 59. The substrate processing apparatus as claimed in claim 48, wherein the third processing gas is for forming a film. 60. The substrate processing apparatus as claimed in claim 48, wherein the third processing gas is different from the first processing gas, and is chosen from the group consisting of H 2 Si[N(CH 3 ) 2 ] 2 , (C 2 H 5 ) 2 SiH 2 , (CH 3 ) 2 SiCl 2 , (CH 3 ) 2 Si(OC 2 H 5 ) 2 , (CH 3 ) 2 Si(OCH 3 ) 2 , (CH 3 ) 2 SiH 2 , C 2 H 5 Si(OC 2 H 5 ) 3 , (CH 3 ) 3 SiSi(CH 3 ) 3 , HN[Si(CH 3 ) 3 ] 2 , (CH 3 )(C 6 H 5 )SiCl 2 , CH 3 SiH 3 , CH 3 SiCl 3 , CH 3 Si(OC 2 H 5 ) 3 , CH 3 Si(OCH 3 ) 3 , C 6 H 5 Si(Cl)(OC 2 H 5 ) 2 , C 6 H 5 Si(OC 2 H 5 ) 3 , (C 2 H 5 ) 4 Si, Si[N(CH 3 ) 2 ] 4 , Si(CH 3 ) 4 , Si(C 2 H 5 ) 3 H, (C 2 H 5 ) 3 SiN 3 , (CH 3 ) 3 SiCl, (CH 3 ) 3 SiOC 2 H 5 , (CH 3 ) 3 SiOCH 3 , (CH 3 ) 3 SiH, (CH 3 ) 3 SiN 3 , (CH 3 ) 3 (C 2 H 3 )Si, SiH[N(CH 3 ) 2 ] 3 , SiH[N(CH 3 ) 2 ] 3 , Si(CH 3 COO) 4 , Si(OCH 3 ) 4 , Si(OC 2 H 5 ) 4 , Si(I—OC 3 H 7 ) 4 , Si(t-OC 4 H 9 ) 4 , Si(n-OC 4 H 9 ) 4 , Si(OC 2 H 5 ) 3 F, HSi(OC 2 H 5 ) 3 , Si(I—OC 3 H 7 ) 3 F, Si(OCH 3 ) 3 F, HSi(OCH 3 ) 3 , H 2 SiCl 2 , Si 2 Cl 6 , Si 2 F 6 , SiF 4 , SiCl 4 , SiBr 4 , HSiCl 3 , SiCl 3 F, Si 3 H 8 , SiH 2 Cl 2 , Si(C 2 H 5 ) 2 Cl 2 , and the group consisting of (C 2 H 5 ) 2 AlN 3 , (C 2 H 5 ) 2 AlBr, (C 2 H 5 ) 2 AlCl, (C 2 H 5 ) 2 AlI, (I—C 4 H 9 )AlH, (CH 3 ) 2 AlNH 2 , (CH 3 ) 2 AlCl, (CH 3 ) 2 AlH, (CH 3 ) 2 AlH:N(CH 3 ) 2 C 2 H 5 , AlH 3 :N(CH 3 ) 2 C 2 H 5 , Al(C 2 H 5 )Cl 2 , Al(CH 3 ) Cl 2 , Al(C 2 H 5 ) 3 , Al(I—C 4 H 9 )Al, Al(I—OC 4 H 9 ) 3 AlCl 3 , Al(CH 3 ) 3 , AlH 3 :N(CH 3 ) 3 , Al(AcAc) 3 , Al(DPM) 3 , Al(HFA) 3 , Al(OC 2 H 5 ) 3 , Al(I—C 4 H 9 ) 3 , Al(I—OC 3 H 7 ) 8 , Al(OCH 3 ) 3 , Al(n-OC 4 H 9 ) 3 , Al(n-OC 3 H 7 ) 3 , Al(sec-OC 4 H 9 ) 3 , Al(t-OC 4 H 9 ) 3 , and AlBr 3 . 61. The substrate processing apparatus as claimed in claim 1, wherein a first switching valve comprises:a switching valve container,a ceramic valve element prepared rotation-free in the switching valve container,a magnetic unit that is combined in one body with the ceramic valve element in the switching valve container, andan electromagnetic driving unit that is magnetically combined with the magnetic body, and prepared outside of the switching valve container, wherein a slot is formed to the ceramic valve element. 62. A substrate processing method using a substrate processing apparatus equipped with a processing container, a substrate holding stand prepared for holding a substrate-to-be-processed in the processing container, a first processing gas supply unit provided on a first side of the substrate holding stand in the processing container, a first exhaust opening provided on a second side countering the first side of the substrate holding stand in the processing container, a second processing gas supply unit provided on the second side of the substrate holding stand in the processing container, and a second exhaust opening provided on the first side of the substrate holding stand in the processing container, comprising:a first step for performing a first process on the surface of the substrate-to-be-processed, wherein the first processing gas supply unit supplies a first processing gas from the first side to the second side along the surface of the substrate-to-be-processed, and the discharging volume of the second exhaust opening is controlled to be less than the discharging volume of the first exhaust opening, anda second step for performing a second process on the surface of the substrate-to-be-processed, wherein the second processing gas supply unit supplies a second processing gas that is different from the first processing gas from the second side to the first side along the surface of the substrate-to-be-processed, and the discharging volume of the first exhaust opening is controlled to be less than the discharging volume of the second exhaust opening. 63. The substrate processing method as claimed in claim 62, wherein an inactive gas is supplied to the processing container from the second processing gas supply unit in the first step, and an inactive gas is supplied to the processing container from the first processing gas supply unit in the second step. 64. A substrate processing apparatus comprising:a processing container,a substrate holding stand prepared for holding a substrate-to-be-processed in the processing container,a processing gas supply unit provided on a first side of the substrate holding stand in the processing container for supplying a processing gas to the surface of the substrate-to-be-processed on the substrate holding stand, wherein the processing gas flows along the surface of the substrate-to-be-processed from the first side to a second side that counters the first side,a first exhaust opening provided on the second side of the substrate holding stand in the processing container,a radical source provided on the second side of the substrate holding stand in the processing container for supplying radicals to the surface of the substrate-to-be-processed on the substrate holding stand such that the radicals flow along the surface of the substrate-to-be-processed from the second side to the first side, anda second exhaust opening provided on the first side of the substrate holding stand in the processing container. 65. The substrate processing apparatus as claimed in claim 64, wherein the radical source comprises a source of plasma provided on a side wall portion of the processing container. 66. The substrate processing apparatus as claimed in claim 1, wherein the second processing gas has reactivity to the first processing gas. 67. The substrate processing apparatus as claimed in claim 62, wherein the second processing gas has reactivity to the first processing gas.