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High throughput plasma treatment system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23F-001/00
  • H01L-021/306
  • C23C-016/00
  • B65G-049/07
출원번호 US-0829305 (2001-04-09)
발명자 / 주소
  • Rigali, Louis A.
  • Hoffman, David E.
  • Wang, Keda
  • Smith, III, William F.
출원인 / 주소
  • Nordson Corporation
대리인 / 주소
    Wood, Herron & Evans, L.L.P.
인용정보 피인용 횟수 : 10  인용 특허 : 58

초록

A system for the plasma treatment of parts. The system includes a chamber base sealingly engageable with a reaction chamber to form a treatment chamber and a lifting device operable to lift the reaction chamber from the chamber base. A transfer mechanism is operable to transfer parts along a guide t

대표청구항

1. A system for the plasma treatment of a plurality of parts at one time, comprising:a reaction chamber having an open bottom;a chamber base sealingly engageable with said bottom of said reaction chamber to form a treatment chamber;a lifting device coupled with said reaction chamber and operable to

이 특허에 인용된 특허 (58)

  1. Yamazaki Shunpei (Tokyo JPX) Imatou Shinji (Atsugi JPX) Ishida Noriya (Atsugi JPX) Sasaki Mari (Atsugi JPX) Sakama Mitsunori (Hiratsuka JPX) Fukada Takeshi (Ebina JPX) Hirose Naoki (Atsugi JPX) Tsuch, Apparatus and method for forming thin films.
  2. Schumacher ; III John E. (Boulder CO), Apparatus and method for plasma treating of circuit boards.
  3. Haji Hiroshi,JPX, Apparatus and method for surface treatment, and apparatus and method for wire bonding using the surface treatment appara.
  4. Haji Hiroshi,JPX, Apparatus and method for surface treatment, and apparatus and method for wire bonding using the surface treatment apparatus.
  5. Tullis Barclay J. (Palo Alto CA) Bailey John S. (Sunnyvale CA) Gunawardena D. R. (Union City CA) Kaempf Ulrich (Los Altos CA), Apparatus for automated cassette handling.
  6. Uehara Akira (Yokohama JPX) Kiyota Hiroyuki (Hiratsuka JPX) Miyazaki Shigekazu (Sagamihara JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for automatic semi-batch sheet treatment of semiconductor wafers by plasma reaction.
  7. Richards Edmond A. (Marlton NJ), Apparatus for conveying a semiconductor wafer.
  8. Sasaki Toshiaki (Kanagawa JPX) Shimizu Hitoshi (Kanagawa JPX), Apparatus for manufacturing a thin-film photovoltaic conversion device.
  9. Tateishi Hideki (Yokohama JPX) Kamei Tsuneaki (Kanagawa JPX) Abe Katsuo (Yokosuka JPX) Kobayashi Shigeru (Kawasaki JPX) Aiuchi Susumu (Yokohama JPX) Nakatsukasa Masashi (Tama JPX) Takahashi Nobuyuki , Apparatus for performing continuous treatment in vacuum.
  10. Uehara Akira (Yokohama JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for the treatment of a wafer by plasma reaction.
  11. Hijikata Isamu (Tokyo JPX) Uehara Akira (Yokohama JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for the treatment of semiconductor wafers by plasma reaction.
  12. Wills James C. (Los Altos CA) Spenser Douglas S. (Santa Clara CA), Apparatus for treating semiconductor wafers.
  13. Layton Howard M. (New Fairfield CT) Yocis Kenneth (Carmel NY), Automated work transfer system for chemical processing baths.
  14. Kim Youl (Daeku KRX), Automatic lead frame feeding device for a TO-220 semiconductor manufacturing apparatus.
  15. Uehara, Akira; Hijikata, Isamu; Nakane, Hisashi; Nakayama, Muneo, Automatic plasma processing device and heat treatment device.
  16. Uehara, Akira; Hijikata, Isamu; Nakane, Hisashi; Nakayama, Muneo, Automatic plasma processing device and heat treatment device for batch treatment of workpieces.
  17. Ciardella Robert L. (Encinitas CA) Maiorca Philip P. (Poway CA) Babiarz Alec J. (Encinitas CA) La Duong (San Diego CA) Bouras Carlos E. (Encinitas CA) Meier Mark S. (Encinitas CA) Christofferson John, Computer controlled viscous fluid dispensing system.
  18. Cannella Vincent D. (Birmingham MI), Continuous dry etching system.
  19. Kempf Stefan (Alzenau DEX), Device for transferring a workpiece into and out from a vacuum chamber.
  20. Furr Michael G. (San Jose CA) Kava Joseph (San Jose CA) Blackburn Greg (San Jose CA) McGovern Richard (San Jose CA), Domed extension for process chamber electrode.
  21. Yamamoto Shinichi (Yokohama JPX) Sumitomo Yasusuke (Yokohama JPX) Horiike Yasuhiro (Tokyo JPX) Shibagaki Masahiro (Hiratsuka JPX), Etching apparatus using a plasma.
  22. Bobbio Stephen M. (Wake Forest NC) DuBois Thomas D. (Charlotte NC) Tranjan Farid M. (Charlotte NC) Lucey ; Jr. George K. (Burtonsville MD) Geis James D. (Cheshire CT) Lipscomb Robert F. (Chapel Hill , Fluxless soldering method.
  23. Bumble Bruce (Croton-on-Hudson NY) Cuomo Jerome J. (Lake Lincolndale NY) Logan Joseph S. (Poughkeepsie NY) Rossnagel Steven M. (White Plains NY), Hollow cathode enhanced plasma for high rate reactive ion etching and deposition.
  24. Davis Cecil J. (Greenville TX) Matthews Robert (Plano TX) Bowling Robert A. (Garland TX), Integrated circuit processing system.
  25. Sato Koji (Tokyo JPX) Ide Junichi (Tokyo JPX), Magazine conveying apparatus.
  26. Rolfson J. Brett ; Crane William J., Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch.
  27. Sivaramakrishnam Visweswaren ; Nguyen Bang C. ; Rao Gayathri ; Robles Stuardo ; Fong Gary L. ; Lim Vicente ; Lee Peter W., Method and apparatus for forming a thin polymer layer on an integrated circuit structure.
  28. Dornfest Charles ; Gupta Anand ; Girard Gerald, Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers.
  29. Haji Hiroshi,JPX, Method for forming a gold plating electrode a substrate based on the electrode forming method, and a wire bonding method utilizing this electrode forming method.
  30. Haji Hiroshi,JPX, Method for forming a gold plating electrode, a substrate based on the electrode forming method, and a wire bonding meth.
  31. Begin Robert G. (Montecito CA) Clarke Peter J. (Santa Barbara CA), Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus.
  32. Wandke Ernst (Geretsried DEX), Method for soldering printed-circuit boards under low pressure.
  33. Sato Junichi (Tokyo JPX) Hasegawa Toshiaki (Kanagawa JPX) Komatsu Hiroshi (Kanagawa JPX), Multi-chamber wafer process equipment having plural, physically communicating transfer means.
  34. Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Wang David N. (Cupertino CA) Cheng David (San Jose CA) Toshima Masato (San Jose CA) Harari Isaac (Mountain View CA) Hoppe Peter D. (Sun, Multichamber integrated process system.
  35. Beach William F. (Bridgewater NJ) Wary John (Noblesville IN) Olson Roger A. (Amery WI), Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement.
  36. Yamazaki Shunpei (Tokyo JPX) Imatoh Shinji (Kanagawa JPX) Hayashi Shigenori (Kanagawa JPX), Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction.
  37. Frei John K. (Mesa AZ) Fiorenzo Russell T. (Scottsdale AZ), Plasma based soldering by indirect heating.
  38. Haji Hiroshi,JPX, Plasma cleaning device for substrate.
  39. Turner Terry R. (Austin TX) Spain James D. (Georgetown TX) Swyers John R. (Austin TX), Plasma monitoring and control method and system.
  40. Saito Hiroshi (Fujisawa JPX) Suzuki Yasumichi (Yokohama JPX) Tamura Naoyuki (Kudamatsu JPX), Plasma processing method and an apparatus for carrying out the same.
  41. Lantsman Alexander D. (Middletown NY), Plasma processing system with reduced particle contamination.
  42. Kawakami Satoru (Sagamihara JPX) Suzuki Tsuyoshi (Kawasaki JPX) Arami Junichi (Tokyo-To JPX) Deguchi Yoichi (Machida JPX), Plasma treatment apparatus.
  43. Straemke Siegfried (Fichtenhain 6 D-5135 Selfkant 4 DEX), Plasma treatment apparatus.
  44. Turlot Emmanuel (Verrires le Buisson FRX) Emeraud Thierry (Bures sur Yvettes FRX) Schmitt Jacques (La Ville du Bois FRX), Plasma treatment apparatus and method for operating same.
  45. Mikami Akiyoshi (Yamatotakada JPX) Ogura Takashi (Nara JPX) Terada Kousuke (Tenri JPX) Yoshida Masaru (Nara JPX) Yamashita Takuo (Tenri JPX) Tanaka Koichi (Nara JPX) Okibayashi Katsushi (Sakurai JPX), Process for preparing an electroluminescent device.
  46. Kuehnle Manfred R. (New London NH) Hagenlocher Arno K. (Framingham MA) Giardino Nicholas A. (Sharon MA), Rectilinear sputtering apparatus and method.
  47. Ebata Hitoshi (Mishima JPX) Komiyama Yoshizo (Gotenba JPX), Semiconductor vapor phase growing apparatus.
  48. Kakizaki Satoshi (Tokyo JPX) Karino Toshikazu (Tokyo JPX) Izumi Shoichiro (Tokyo JPX) Koizumi Mikio (Tokyo JPX) Ozawa Makoto (Tokyo JPX) Ikeda Fumihide (Tokyo JPX) Yoshida Tohru (Tokyo JPX) Saito Ryo, Semiconductor wafer reaction furnace with wafer transfer means.
  49. Davis Cecil J. (Greenville TX) Matthews Robert (Plano TX) Hildenbrand Randall C. (Richardson TX), Semiconductor wafer transfer method and arm mechanism.
  50. Kitayama Hirofumi (Aikawa JPX) Kato Mitsuo (Sagamihara JPX) Takanabe Eiichiro (Shiroyama JPX) Kobayashi Masaru (Shiroyama JPX), Substrate transfer device.
  51. Miyoshi Hideaki (Tokyo JPX), Substrate transport apparatus and substrate transport path adjustment method.
  52. Kondo Hiroshi (Tokyo JPX) Tachibana Mitsuhiro (Yamanashi JPX), System for continuously washing and film-forming a semiconductor wafer.
  53. Bhat Pawan K., Treatment system including vacuum isolated sources and method.
  54. Ukai Katsumi (Fuchu JPX) Tsukada Tsutomu (Fuchu JPX) Ikeda Kouji (Fuchu JPX) Adachi Toshio (Fuchu JPX), Vacuum processing apparatus.
  55. Katagiri Yoshitaka (Yokohama JPX), Vacuum processing apparatus and transportation system thereof.
  56. Nishida Keijiro (Nimomiya JPX) Kakei Mitsuo (Tokyo JPX) Kamiya Osamu (Yokohama JPX) Sekimura Nobuyuki (Yokohama JPX), Vapor deposition apparatus.
  57. Morisako Isamu (Fukuoka JPX), Wire bonding apparatus and method.
  58. Haji Hiroshi (Chikushino JPX), Wire bonding method.

이 특허를 인용한 특허 (10)

  1. Yeap,Boon June; Hu,Jie Wei; Duan,Rong; Kwan,Ka Shing Kenny, Conduit for preventing oxidation of a electronic device.
  2. Dhas, Arul; Boumatar, Kareem; Ramsayer, Christopher James, Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas.
  3. Augustyniak, Edward; Ramsayer, Christopher James; Singhal, Akhil N.; Boumatar, Kareem, Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates.
  4. Ikushima, Kazumasa, Desktop working apparatus.
  5. White,John M.; Blonigan,Wendell T., Linear vacuum deposition system.
  6. Kim, Beong-Ju; Kim, Sung-Chul, Sealant curing apparatus.
  7. Blonigan,Wendell T.; White,John M., Substrate conveyor system.
  8. Kang, Hu; LaVoie, Adrien, Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging.
  9. Kang, Hu; LaVoie, Adrien, Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging.
  10. Bolden, II,Thomas V., Width adjustable substrate support for plasma processing.
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