초록 ▼

To provide a technique for manufacturing a wiring line having a low resistance and a high heat resistance so as to make an active matrix type display device larger and finer. The wiring line is constructed of a laminated structure of a refractory metal, a low resistance metal and a refractory metal,

To provide a technique for manufacturing a wiring line having a low resistance and a high heat resistance so as to make an active matrix type display device larger and finer. The wiring line is constructed of a laminated structure of a refractory metal, a low resistance metal and a refractory metal, and the wiring line is further protected with an anodized film. As a result, it is possible to form the wiring line having the low resistance and the high heat resistance and to form a contact with an upper line easily.

대표청구항 ▼

1. A method of manufacturing a semiconductor device comprising:forming a multi-layered film comprising a first conductive layer, a second conductive layer on the first conductive layer, and a third conductive layer on the second conductive layer;patterning the multi-layered film to form a first wiri

1. A method of manufacturing a semiconductor device comprising:forming a multi-layered film comprising a first conductive layer, a second conductive layer on the first conductive layer, and a third conductive layer on the second conductive layer;patterning the multi-layered film to form a first wiring line;forming an insulating film over the first wiring line;forming a contact hole extending through the insulating film and reaching the first wiring line;forming a second wiring line electrically connected with the first wiring line through the contact hole, andwherein the second wiring line is connected with an upper surface of the second conductive layer at a bottom portion of the contact hole. 2. A method according to claim 1, wherein the second conductive layer comprising aluminum or titanium as its main component. 3. A method according to claim 1, wherein the wiring line is the gate line of a thin film transistor. 4. A method of manufacturing a semiconductor device comprising:forming a multi-layered film comprising a first conductive layer, a second conductive layer on the first conductive layer, and a third conductive layer on the second conductive layer;patterning the multi-layered film to form a first wiring line;oxidizing the first wiring;forming an insulating film over the first wiring line;forming a contact hole extending through the insulating film and reaching the first wiring line;forming a second wiring line electrically connected with the first wiring line through the contact hole, andwherein the second wiring line is connected with an upper surface of the second conductive layer at a bottom portion of the contact hole. 5. A method according to claim 4, wherein the step of oxidizing the wiring line is conducted by anodizing. 6. A method according to claim 4, wherein the second conductive layer comprising aluminum or titanium as its main component. 7. A method according to claim 4, wherein the wiring line is the gate line of a thin film transistor. 8. A method of manufacturing a semiconductor device comprising:forming a multi-layered film comprising a first conductive layer, a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer;patterning the multi-layered film to form a first wiring line;oxidizing the first wiring line;forming an insulating film over the first wiring line;forming a contact hole extending through the insulating film and reaching the first wiring line; andforming a second wiring line electrically connected with the first wiring line through the contact hole,wherein the second wiring line is connected with an upper surface of the second conductive layer at a bottom portion of the contact hole, andwherein the second conductive layer has a width different from those of the first and the third conductive layers. 9. A method according to claim 8, wherein the second conductive layer comprising aluminum or titanium as its main component. 10. A method according to claim 8, wherein the first wiring line is the gate line of a thin film transistor. 11. A method of manufacturing a semiconductor device comprising:forming a multi-layered film comprising a first conductive layer, a second conductive layer on the first conductive layer, and a third conductive layer on the second conductive layer;patterning the multi-layered film to form a first wiring line;reducing the width of the second conductive layer;forming an insulating film over the first wiring line;forming a contact hole extending through the insulating film and reaching the first wiring line;forming a second wiring line electrically connected with the first wiring line through the contact hole, andwherein the second wiring line is connected with an upper surface of the second conductive layer at a bottom portion of the contact hole. 12. A method according to claim 11, wherein the second conductive layer comprising aluminum or titanium as its main component. 13. A method according to claim 1 1, wherein the first wiring line is the gate line of a thin film transistor.