Method for making a thin film using pressurization
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/425
출원번호
US-0018757
(2000-06-29)
우선권정보
FR-1999-908379 (1999-06-30)
국제출원번호
PCT/FR00/01828
(2000-06-29)
국제공개번호
WO01/03171
(2001-01-11)
발명자
/ 주소
Aspar, Bernard
Bruel, Michel
Moriceau, Hubert
출원인 / 주소
Commissariat a l'energie Atomique
대리인 / 주소
Deschere, Esq. Linda M.
인용정보
피인용 횟수 :
112인용 특허 :
4
초록▼
The invention relates to a process for making a thin film starting from a substrate ( 1 ) of a solid material with a plane face ( 2 ) comprising: the implantation of gaseous compounds in the substrate ( 1 ) to make a layer of micro-cavities ( 4 ) at a depth from the said plane face ( 2 ) corr
The invention relates to a process for making a thin film starting from a substrate ( 1 ) of a solid material with a plane face ( 2 ) comprising: the implantation of gaseous compounds in the substrate ( 1 ) to make a layer of micro-cavities ( 4 ) at a depth from the said plane face ( 2 ) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities, partial or total separation of the thin film from the rest of the substrate ( 1 ), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face ( 2 ).
대표청구항▼
1. A process for making a thin film starting from a substrate of a solid material having a plane face comprising:the implantation of gaseous compounds in the substrate to make a layer of micro-cavities at a depth from the plane face corresponding to the thickness of the required thin film, the gaseo
1. A process for making a thin film starting from a substrate of a solid material having a plane face comprising:the implantation of gaseous compounds in the substrate to make a layer of micro-cavities at a depth from the plane face corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities; andpartial or total separation of the thin film from the rest of the substrate, this separation comprising a step in which thermal energy is added to provoke coalescence of at least part of the micro-cavities while a pressure is applied to the plane face, said applied pressure being adjusted during said coalescence to remain above a pressure called the limiting pressure, below which blisters appear on the plane face and above which blisters do not wear on the plane face. 2. The process according to claim 1, in which the pressure is a gas pressure. 3. The process according to claim 1, in which the pressure is a mechanical pressure. 4. The process according to claim 3, in which the mechanical pressure is generated using a piston. 5. The process according to claim 1, in which the pressure is applied locally on the plane face. 6. The process according to claim 1, in which the pressure is applied uniformly on the plane face. 7. The process according to claim 1, also comprising bonding of a thickener onto the plane face, after implantation of the gaseous compounds. 8. The process according to claim 7, in which the thickener is composed of a wafer. 9. The process according to claim 8, in which the wafer is bonded by molecular bonding with the plane face. 10. The process according to claim 7, in which the thickener is formed by deposition of one or several materials. 11. The process according to claim 7, in which the pressure is applied through the thickener. 12. The process according to claim 1, in which the pressure is adjusted during the coalescence of at least part of the micro-cavities, to remain slightly above the limiting pressure. 13. The process according to claim 1, in which coalescence is performed such that the thin film is separated from the rest of the substrate by pulling them apart. 14. The process according to claim 1, in which the thin film is separated from the rest of the substrate by application of a heat treatment and, optionally, by mechanical forces. 15. The process according to claim 1, in which the substrate used as the initial substrate is a substrate that has already been used to produce a thin film according to the process. 16. The process according to claim 15, in which the previously used substrate is polished to provide a new plane face. 17. The process according to claim 1, in which the substrate supports one or several homogeneous and/or heterogeneous layers on the side having the plane face. 18. The process according to claim 1, in which the substrate comprises semi-conducting material, at least on the side having the plane face. 19. The process according to claim 1, in which the substrate comprises all or part of at least one electronic device and/or at least one electro-optical device, on the side having the plane face. 20. The process according to claim 1, in which the separation of the thin film is delayed by the application of an additional step that consists of applying an additional pressure onto the thin film.
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