IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0090257
(2002-03-01)
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발명자
/ 주소 |
- Bazargan, Hassan K.
- Tan, Jian
- Ghia, Atul V.
- Menon, Suresh M.
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출원인 / 주소 |
|
대리인 / 주소 |
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인용정보 |
피인용 횟수 :
8 인용 특허 :
19 |
초록
▼
A hot swap protection circuit ( 40 ) for an integrated circuit being plugged into a powered-up system includes a first circuit ( 10 ) for detecting a hot swap condition, a second circuit ( 20 ) coupled to the first circuit for preventing a pn junction diode ( 52 ) in a pull-up transistor ( 32 ) from
A hot swap protection circuit ( 40 ) for an integrated circuit being plugged into a powered-up system includes a first circuit ( 10 ) for detecting a hot swap condition, a second circuit ( 20 ) coupled to the first circuit for preventing a pn junction diode ( 52 ) in a pull-up transistor ( 32 ) from going into a forward bias condition, and a third circuit ( 30 ) coupled to the first and second circuits for preventing the pull-up transistor from turning on during the hot swap condition.
대표청구항
▼
1. A hot swap protection circuit for an integrated circuit being plugged into a powered-up system, comprises:a first circuit for detecting a hot swap condition,a second circuit coupled to the first circuit for preventing a pn junction diode in a pull-up transistor from going into a forward bias cond
1. A hot swap protection circuit for an integrated circuit being plugged into a powered-up system, comprises:a first circuit for detecting a hot swap condition,a second circuit coupled to the first circuit for preventing a pn junction diode in a pull-up transistor from going into a forward bias condition; anda third circuit coupled to the first and second circuits for preventing the pull-up transistor from turning on during the hot swap condition. 2. The circuit of claim 1, wherein the circuit for detecting comprises detecting a beginning and an ending of the hot swap condition. 3. The circuit of claim 1, wherein the first circuit comprises a transistor having a gate coupled to an input/output voltage supply during the hot swap and said transistor further having a drain coupled to a pad that is coupled to a signal line of the powered-up system during the hot swap. 4. The circuit of claim 3, wherein the second circuit disconnects the NWELL of the pull-up transistor from the input/output voltage supply during the hot swap condition providing isolation of the NWELL from the input/output voltage supply during the hot swap condition. 5. The circuit of claim 4, wherein the second circuit further charges the NWELL, to the voltage level of the signal line during the hot swap condition to prevent the pn junction diode from going into a forward bias condition. 6. The circuit of claim 1, wherein the pull-up transistor is coupled to a pad of the integrated circuit. 7. The circuit or claim 1, wherein the integrated circuit forms a part of a printed circuit board being plugged into the powered-up system. 8. The circuit of claim 1, wherein the pull-up transistor is a pmos transistor. 9. A method of protecting a powered-up system during the insertion of an integrated circuit, comprising the steps of:detecting a hot swap condition;preventing a forward bias condition in a pn junction diode of a pull-up transistor of the integrated circuit during the hot swap condition; andbiasing the pull-up transistor coupled to a pad of the integrated circuit to remain turned off during the hot swap condition. 10. The method of claim 9, wherein the step of detecting comprises the step of detecting the start of the hot swap condition when a voltage at a pad of the integrated circuit is a predetermined amount above an input/output supply voltage and further comprises the step of detecting the end of the hot swap condition when the input/output supply voltage is within a predetermined amount below the voltage at the pad. 11. The method of claim 9, wherein the pull-up transistor forms a portion of a first circuit. 12. A method of protecting a powered-up system during the insertion of a printed circuit board containing an integrated circuit, comprising the steps of:detecting a hot swap condition;isolating an nwell of a pmos pull-up transistor from a power source of the powered-up system during the hot swap condition; andpreventing the pmos pull-up transistor coupled to a pad of the integrated circuit from turning on during the hot swap condition. 13. The method of claim 12, wherein the step of detecting comprises the step of detecting a beginning and an ending of the hot swap condition. 14. The method of claim 12, wherein the step of isolating comprises disconnecting the NWELL of the pull-up transistor from the power source of the powered-up system during the hot swap condition providing isolation of the NWELL frost the power source during the hot swap condition. 15. The method of claim 12, wherein the step of isolating comprises the step of charging the NWELL to the voltage level of a signal line of the powered-up system during the hot swap condition to prevent the pn junction diode from going into a forward bias condition. 16. A system, comprising:a system backplane; anda printed circuit board (PCB) inserted into the system backplane and coupled to receive power therefrom, the PCB comprising an integrated circuit that includes:a first circuit that detects a hot swap condition during an insertion of the PCB into the system backplane when the system backplane is powered up;a second circuit coupled to the first circuit that prevents a pn junction diode in a pull-up transistor from going into a forward bias condition; anda third circuit coupled to the first and second circuits that prevents the pull-up transistor from turning on during the hot swap condition. 17. The system of claim 16, wherein the first circuit detects a beginning and an ending of the hot swap condition. 18. The system of claim 16, wherein the first circuit comprises a transistor having a gate coupled to an input/output voltage supply during the hot swap and further having a drain coupled to a pad that is coupled to a signal line of the system backplane during the hot swap. 19. The system of claim 18, wherein the second circuit disconnects the NWELL of the pull-up transistor from the input/output voltage supply during the hot swap condition, providing isolation of the NWELL from the input/output voltage supply during the hot swap condition. 20. The system of claim 19, wherein the second circuit further charges the NWELL to the voltage level of the signal line during the hot swap condition to prevent the pn junction diode from going into A forward bias condition. 21. The system of claim 16, wherein the pull-up transistor is coupled to a pad of the integrated circuit. 22. The system of claim 16, wherein the pull-up transistor is a PMOS transistor. 23. A printed circuit board (PCB), comprising:a plurality of power terminals; andan integrated circuit coupled to the power terminals, the integrated circuit comprising:a first circuit that detects a hot swap condition when power is applied to the power terminals;a second circuit coupled to the first circuit that prevents a pn junction diode in a pull-up transistor from going into a forward bias condition; anda third circuit coupled to the first and second circuits that prevents the pull-up transistor from turning on during the hot swap condition. 24. The PCB of claim 23, wherein the first circuit detects a beginning and an ending of the hot swap condition. 25. The PCB of claim 23, wherein the first circuit comprises a transistor having a gate coupled to an input/output voltage supply during the hot swap and further having a drain coupled to a pad that is coupled to a signal line of the PCB during the hot swap. 26. The PCB of claim 25, wherein the second circuit disconnects the NWELL of the pull-up transistor from the input/output voltage supply during the hot swap condition, providing isolation of the NWELL from the input/output voltage supply during the hot swap condition. 27. The PCB of claim 26, wherein the second circuit further charges the NWELL to the voltage level of the signal line during the hot swap condition to prevent the pn junction diode from going into a forward bias condition. 28. The PCB of claim 23, wherein the pull-up transistor is coupled to a pad of the integrated circuit. 29. The PCB of claim 23, wherein the pull-up transistor is a PMOS transistor.
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