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The present invention relates to gas separation membranes including a metal-based layer having sub-micron scale thicknesses. The metal-based layer can be a palladium alloy supported by ceramic layers such as a silicon oxide layer and a silicon nitride layer. By using MEMS, a series of perforations (

The present invention relates to gas separation membranes including a metal-based layer having sub-micron scale thicknesses. The metal-based layer can be a palladium alloy supported by ceramic layers such as a silicon oxide layer and a silicon nitride layer. By using MEMS, a series of perforations (holes) can be patterned to allow chemical components to access both sides of the metal-based layer. Heaters and temperature sensing devices can also be patterned on the membrane. The present invention also relates to a portable power generation system at a chemical microreactor comprising the gas separation membrane. The invention is also directed to a method for fabricating a gas separation membrane. Due to the ability to make chemical microreactors of very small sizes, a series of reactors can be used in combination on a silicon surface to produce an integrated gas membrane device.

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1. A membrane, comprising:at least one support layer including at least one hole; anda metal-based layer positioned adjacent the at least one support layer, the metal-based layer having a thickness of less than 1 μm and being capable of performing gas separation or catalysis,wherein the at lea

1. A membrane, comprising:at least one support layer including at least one hole; anda metal-based layer positioned adjacent the at least one support layer, the metal-based layer having a thickness of less than 1 μm and being capable of performing gas separation or catalysis,wherein the at least one hole allows chemical components to access both sides of at least a portion of the metal-based layer. 2. A membrane as in claim 1, wherein the at least one hole has a diameter of at least about 0.1 μm. 3. A membrane as in claim 1, wherein the at least one hole has a diameter of at least about 0.5 μm. 4. A membrane as in claim 1, wherein the at least one hole has a diameter of at least about 1 μm. 5. A membrane as in claim 1, wherein the at least one hole has a diameter of at least about 2 μm. 6. A membrane as in claim 1, wherein the at least one hole has a diameter of at least about 4 μm. 7. A membrane as in claim 1, wherein the metal-based layer is a solid layer. 8. A membrane as in claim 7, wherein the solid layer is a palladium alloy. 9. A membrane as in claim 1, wherein the metal-based layer has a thickness of less than about 0.5 μm. 10. A membrane as in claim 1, wherein the metal-based layer has a thickness of less than about 0.3 μm. 11. A membrane as in claim 1, wherein the metal-based layer has a thickness of less than about 0.2 μm. 12. A membrane as in claim 1, wherein the metal-based layer has a thickness of less than about 0.1 μm. 13. A membrane as in claim 1, wherein the at least one support layer comprises a first ceramic layer positioned adjacent the metal-based layer. 14. A membrane as in claim 13, wherein the at least one support layer further comprises a second ceramic layer positioned adjacent the first ceramic layer. 15. A membrane as in claim 13, wherein the first ceramic layer is selected from the group consisting of metal oxides, metal nitrides, and metal carbides. 16. A membrane as in claim 15, wherein the first ceramic layer is a silicon oxide layer. 17. A membrane as in claim 14, wherein the second ceramic layer is selected from the group consisting of metal oxides, metal nitrides, and metal carbides. 18. A membrane as in claim 17, wherein the second ceramic layer is a silicon nitride layer. 19. A membrane as in claim 1, wherein the at least one support layer has a thickness of less than about 1 μm. 20. A membrane as in claim 1, wherein the at least one support layer has a thickness of less than about 0.5 μm. 21. A membrane as in claim 1, wherein the at least one support layer has a thickness of less than about 0.3 μm. 22. A gas separation membrane, comprising:at least one support layer;a metal-based layer positioned adjacent the at least one support layer, the metal-based layer having a thickness of less than 1 μm and being capable of performing gas separation or catalysis; anda heater in thermal communication with the at least one support layer, the heater able to heat the at least one support layer to a temperature of at least about 200° C. 23. A membrane as in claim 22, wherein the heater is able to heat the at least one support layer to a temperature of at least about 300° C. 24. A membrane as in claim 22, wherein the heater is able to heat the at least one support layer to a temperature of at least about 600° C. 25. A valving device at a specific, predetermined temperature, comprising a gas separation membrane having at least one support layer and a metal-based layer positioned adjacent the at least one support layer, the metal-based layer having a thickness of less than 1 μm and being capable of performing gas separation or catalysis, wherein, at a temperature of at least about 200° C., a hydrogen flow exists across the membrane and at a temperature of less than about 200° C., the hydrogen flow is nonexistent. 26. A valving device as in claim 25, where the valving device is an opening for a gas reservoir. 27. A method for fabricating a gas separation membrane, comprising:providing at least one insulating support layer;patterning holes in the at least one support layer; anddepositing a metal-based layer adjacent the at least one insulating support layer, wherein the metal-based layer has a thickness of less than about 1 μm. 28. A method as in claim 27, wherein the at least one insulating support layer comprises a first and a second ceramic layer, the first ceramic layer adjacent the second ceramic layer. 29. A method as in claim 28, wherein the step of patterning holes comprises patterning holes in the second ceramic layer only. 30. A method as in claim 29, wherein the depositing step comprises depositing the metal-based layer adjacent the first ceramic layer. 31. A method as in claim 30, further comprising patterning holes on the first ceramic layer after depositing the metal-based layer, wherein the holes of the first ceramic layer are substantially aligned with the holes of the second ceramic layer. 32. A method as in claim 31, further comprising patterning a heater on the second ceramic layer. 33. A method as in claim 27, wherein the providing step comprises providing the at least one insulating support layer on a silicon surface. 34. An article comprising:at least one support layer containing fabricated holes of an average size less than 1 μm; anda metal-based layer adjacent the at least one support layer having a thickness of less than 1 μm. 35. A device comprising:a gas separation membrane comprising at least one support layer having a first ceramic layer and a second ceramic layer positioned adjacent the first ceramic layer, the membrane further comprising a metal-based layer positioned adjacent the first ceramic layer, the metal-based layer having a thickness of less than 1 μm and being capable of performing gas separation or catalysis,wherein the first and second ceramic layers comprise a front side of the membrane, the membrane further comprising first and second end portions at a back side of the membrane, the first and second end portions being positioned adjacent a top surface of respective first and second silicon wafer supports. 36. A device as in claim 35, further comprising first and second silicon oxide layer portions positioned adjacent an opposing bottom surface of the respective first and second silicon wafer supports. 37. A device as in claim 36, further comprising first and second silicon nitride layer portions positioned adjacent the respective first and second silicon oxide layer portions. 38. A device as in claim 37, wherein the first and second silicon wafer supports comprise inner and outer side surfaces, the device further comprising a continuous metal-based layer positioned adjacent the inner side surfaces of the first and second silicon wafer supports. 39. A device as in claim 38, wherein the first and second silicon nitride layer portions are integral with the metal-based layer of the membrane. 40. A device as in claim 39, further comprising an aluminum plate contacting the portion of the continuous metal-based layer positioned adjacent the first and second silicon nitride layer portions so as to form a channel. 41. A device as in claim 40, wherein the metal-based layer of the membrane is a palladium alloy. 42. A device as in claim 40, further comprising a capping wafer positioned adjacent the front side of the membrane, the capping wafer being constructed and arranged so as to form a second channel upon being positioned adjacent the membrane. 43. A device as in claim 42, wherein the capping wafer comprises an epoxy-molded wafer. 44. A device as in claim 42, wherein the capping wafer comprises a silicon wafer.