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Gas temperature control for a plasma process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • C23F-001/00
  • F25B-029/00
출원번호 US-0173671 (2002-06-19)
발명자 / 주소
  • Long, Maolin
출원인 / 주소
  • Tokyo Electron Limited
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 32  인용 특허 : 22

초록

A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an individual gas species or mixed gas

대표청구항

1. An in-line heat exchanger apparatus for controlling the temperature of a gas comprising:an inlet-side gas line for receiving a gas having a temperature to be controlled;an outlet-side gas line for expelling the gas after the temperature of the gas has been controlled;at least one temperature sens

이 특허에 인용된 특허 (22)

  1. Ohmi Tadahiro,JPX, Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films.
  2. Yamamuka Mikio,JPX ; Kawahara Takaaki,JPX ; Tarutani Masayoshi,JPX ; Horikawa Tsuyoshi,JPX, Chemical vapor deposition apparatus.
  3. Asaba Tetsuo (Odawara JPX) Makino Kenji (Yokohama JPX), Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitab.
  4. Craig R. Metzner ; Turgut Sahin ; Gregory F. Redinbo ; Pravin K. Narwankar ; Patricia M. Liu, Deposition reactor having vaporizing, mixing and cleaning capabilities.
  5. Tushar Mandrekar ; Anish Tolia ; Nitin Khurana, Direct temperature control for a component of a substrate processing chamber.
  6. Seung Yoon Yang KR; In Jae Park KR; Jong Woo Yoon KR; Chang Jae Kim KR; Tanigawa Eiki JP, Gas injection system for chemical vapor deposition device.
  7. Takeshita Kazuhiro,JPX ; Nagashima Shinji,JPX ; Mizutani Yoji,JPX ; Katayama Kyoshige,JPX, Gas treatment apparatus.
  8. Van Buskirk Peter C. ; Bilodeau Steven M. ; Carl ; Jr. Ralph J., Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer.
  9. Murakami Seishi (Kofu JPX) Hatano Tatsuo (Nirasaki JPX), Liquid material supply apparatus and method.
  10. Shibuya Munehiro (Osaka JPX) Kitagawa Masatoshi (Osaka JPX) Kamada Takeshi (Osaka JPX) Hirao Takashi (Osaka JPX), Low vapor-pressure material feeding apparatus.
  11. Mandrekar Tushar ; Tolia Anish ; Khurana Nitin, Method and apparatus for controlling cooling and heating fluids for a gas distribution plate.
  12. Ohnishi Hiroshi (Amagasaki JPX) Hoshinouchi Susumu (Amagasaki JPX), Mixture thin film forming apparatus.
  13. Garo J. Derderian ; Gordon Morrison, Preheating of chemical vapor deposition precursors.
  14. Gomi Hisashi,JPX ; Itoh Masahide,JPX ; Jinnouchi Shimpei,JPX ; Ikeda Towl,JPX, Process gas supply apparatus.
  15. Fujikawa Yuichiro (Yamanashi-ken JPX) Hatano Tatsuo (Yamanashi-ken JPX) Murakami Seishi (Yamanashi-ken JPX), Shower head and film forming apparatus using the same.
  16. Inokuchi Yasuhiro,JPX ; Ikeda Fumihide,JPX, Substrate processing apparatus.
  17. Ono Tetsuo (Kokubunji JPX) Hiraoka Susumu (Kokubunji JPX) Saito Sakae (Tokorozawa JPX) Harada Kunio (Hachioji JPX) Tachibana Mituhiro (Fuchu JPX) Kubota Shigeo (Saitama JPX) Suzuki Keizo (Kodaira JPX, Surface treating apparatus, surface treating method and semiconductor device manufacturing method.
  18. Chang-Jae Kim KR, Temperature controllable gas distributor.
  19. Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
  20. Yasushi Yagi JP; Takeshi Sakuma JP; Wataru Okase JP; Masayuki Kitamura JP; Hironori Yagi JP; Eisuke Morisaki JP, Thermal treatment method and apparatus.
  21. Yoshioka Naoki,JPX ; Ito Seiji,JPX, Unit for vaporizing liquid materials.
  22. Lee Hideki,JPX, Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus.

이 특허를 인용한 특허 (32)

  1. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Apparatus for an improved deposition shield in a plasma processing system.
  2. Sharpless, Leonard J.; Comendant, Keith, Apparatus for an optimized plasma chamber top piece.
  3. Escher,Gary; Allen,Mark A., Barrier layer for a processing element and a method of forming the same.
  4. Derderian,Garo J.; Morrison,Gordon, Deposition system to provide preheating of chemical vapor deposition precursors.
  5. Canney, Brian A.; Karrat, Wally; Lehman, Bret W.; Molloy, Christopher L., Free cooling solution for a containerized data center.
  6. Canney, Brian A.; Karrat, Wally; Lehman, Bret W.; Molloy, Christopher L., Free cooling solution for a containerized data center.
  7. Harada,Yoshio; Takeuchi,Junichi; Nagayama,Nobuyuki; Mitsuhashi,Kouji, Internal member for plasma-treating vessel and method of producing the same.
  8. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  9. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  10. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  11. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  12. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  13. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  14. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  15. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  16. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  17. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved deposition shield in a plasma processing system.
  18. Nishimoto, Shinya; Mitsuhashi, Kouji; Saigusa, Hidehito; Takase, Taira; Nakayama, Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  19. Nishimoto,Shinya; Mitsuhashi,Kouji; Saigusa,Hidehito; Takase,Taira; Nakayama,Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  20. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  21. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  22. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  23. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  24. Fink, Steven T., Method and apparatus for improved baffle plate.
  25. Escher, Gary; Allen, Mark A.; Kudo, Yasuhisa, Method for adjoining adjacent coatings on a processing element.
  26. Sharpless, Leonard J.; Comendant, Keith, Plasma chamber top piece assembly.
  27. Sharpless, Leonard J.; Comendant, Keith, Plasma chamber top piece assembly.
  28. Fink, Steven T., Plasma processing system and baffle assembly for use in plasma processing system.
  29. Okino, Akitoshi; Miyahara, Hidekazu, Plasma temperature control apparatus and plasma temperature control method.
  30. Moriya,Tsuyoshi; Nagaike,Hiroshi; Nakayama,Hiroyuki; Okuyama,Kikuo; Shimada,Manabu, Processing apparatus and method for removing particles therefrom.
  31. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  32. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
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