초록 ▼

Included in the invention are laminates having layers of group III-V materials having low dislocation densities, semiconductor devices fabricated using low dislocation density group III-V layers, and methods for making these structures. Some of the inventions are concerned with GaN layers, GaN semic

Included in the invention are laminates having layers of group III-V materials having low dislocation densities, semiconductor devices fabricated using low dislocation density group III-V layers, and methods for making these structures. Some of the inventions are concerned with GaN layers, GaN semiconductor devices, and semiconductor lasers fabricated from GaN materials. Detailed information on various example embodiments of the inventions are provided in the Detailed Description below, and the inventions are defined by the appended claims.

대표청구항 ▼

1. A method of making a laminate material having regions of low-dislocation density, comprising:depositing a low temperature buffer layer of group III-V material on a substrate;depositing a pattern mask on the low temperature buffer layer, said pattern mask having a pattern intended to produce islan

1. A method of making a laminate material having regions of low-dislocation density, comprising:depositing a low temperature buffer layer of group III-V material on a substrate;depositing a pattern mask on the low temperature buffer layer, said pattern mask having a pattern intended to produce islands of low temperature buffer material separated by troughs;removing material from the low temperature buffer layer exposed by the pattern mask forming a formed low temperature buffer layer;removing the deposited pattern mask;depositing vertically grown high temperature group III-V layers adhering to the formed low temperature buffer layer islands;and depositing a continuous high temperature group III-V layer adhering to the vertically grown high temperature layer, the continuous high temperature layer having exposed regions of low dislocation density. 2. A method according to claim 1, further comprising the step of depositing at least one layer of doped group III-V material over at least one exposed region of low dislocation density. 3. A method according claim 1, further comprising the step of depositing a plurality doped layers of group III-V material over at least one exposed region of low dislocation density, the doped layers including at least two contact layers and at least one light producing layer. 4. A method according to claim 1, wherein said depositing a low temperature buffer layer is performed by a vapor phase deposition technique while maintaining the substrate at a temperature from about 200° C. to about 600° C. 5. A method according to claim 1, wherein said depositing vertically grown high temperature group III-V layers is performed by a vapor phase deposition technique while maintaining the substrate at a temperature greater than 1000° C. 6. A method according to claim 1, wherein said depositing a low temperature buffer layer produces a layer of buffer material having a thickness of 10 to 50 nm. 7. A method according to claim 1, wherein said depositing vertically grown high temperature group III-V layers produces layers having a thickness of 0.7 to 1.0 μm. 8. A method according to claim 1, wherein said depositing a pattern mask is performed to orient the troughs in the <1{overscore (1)}00> direction of the low temperature buffer material. 9. A method according to claim 1, wherein said depositing vertically grown high temperature group III-V layers deposits a ratio of group V compound to a group III compound of 500 to 50,000. 10. A method according to claim 1, wherein said depositing a continuous high temperature group III-V layer deposits a ratio of group V compound to a group III compound of 100 to 50,000. 11. A method according to claim 1, wherein said depositing a continuous high temperature group III-V layer deposits a ratio of group V compound to a group III compound of 500 to 50,000. 12. A method according to claim 1, wherein said depositing a continuous high temperature group III-V layer is performed by a vapor phase deposition technique while maintaining the substrate at a temperature of about 800° C. to about 1300° C. 13. A method according to claim 1, wherein said depositing a low temperature buffer layer produces troughs separating islands of the low temperature buffer layer by about 10 to about 500 μm. 14. A method according to claim 1, wherein said depositing a continuous high temperature group III-V layer deposits a layer having a thickness of about 2 to about 100 μm. 15. A method of making a laminate material having regions of low-dislocation density, comprising:depositing a low temperature buffer layer of group III-V material on a substrate, said depositing being performed by a vapor phase deposition technique at a temperature from about 200° C. to about 600° C., said depositing forming a low temperature buffer layer having a thickness of about 10 to about 50 nm.;depositing a pattern mask on the low temperature buffer layer, said pattern mask having a pattern intended to produce islands of low temperature buffer material separated by troughs, the troughs being oriented in the <1{overscore (1)}00> direction of the low temperature buffer material, the troughs separating the islands of low temperature buffer layer material by about 10 to about 500 μm.;removing material from the low temperature buffer layer exposed by the pattern mask forming a formed low temperature buffer layer;removing the deposited pattern mask;depositing vertically grown high temperature group III-V layers adhering to the formed low temperature buffer layer islands, said depositing a vertically grown layer performed by a vapor phase deposition technique while maintaining the substrate at a temperature greater than 1000° C., said depositing a vertically grown layer producing layers having thicknesses of about 0.7 to about 1.0 μm.;and depositing a continuous high temperature group III-V layer adhering to the vertically grown high temperature layer, the continuous high temperature layer having exposed regions of low dislocation density, said depositing a continuous high temperature group III-V layer is performed by a vapor phase deposition technique while maintaining the substrate at a temperature of about 800° C. to about 1300° C., said depositing a continuous high temperature group III-V layer deposits a layer having a thickness of about 2 to about 100 μm. 16. A product of laminate material having regions of low-dislocation density, the product made by the process of:depositing a low temperature buffer layer of group III-V material on a substrate, said depositing being performed by a vapor phase deposition technique while maintaining the substrate at a temperature from about 200° C. to about 600° C., said depositing forming a low temperature buffer layer having a thickness of about 10 to about 50 nm.;depositing a pattern mask on the low temperature buffer layer, said pattern mask having a pattern intended to produce islands of low temperature buffer material separated by troughs, the troughs being oriented in the <1{overscore (1)}00> direction of the low temperature buffer material, the troughs separating the islands of low temperature buffer layer material by about 10 to about 500 μm.;removing material from the low temperature buffer layer exposed by the pattern mask forming a formed low temperature buffer layer;removing the deposited pattern mask;depositing vertically grown high temperature group III-V layers adhering to the formed low temperature buffer layer islands, said depositing a vertically grown layer performed by a vapor phase deposition technique while maintaining the substrate at a temperature greater than 1000° C., said depositing a vertically grown layer producing layers having thicknesses of about 0.7 to about 1.0 μm.;and depositing a continuous high temperature group III-V layer adhering to the vertically grown high temperature layer, the continuous high temperature layer having exposed regions of low dislocation density, said depositing a continuous high temperature group III-V layer is performed by a vapor phase deposition technique while maintaining the substrate at a temperature of about 800° C. to about 1300° C., said depositing a continuous high temperature group III-V layer deposits a layer having a thickness of about 2 to about 100 μm.