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특허 상세정보

GaN structures having low dislocation density and methods of manufacture

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/00   
미국특허분류(USC) 438/046; 438/022; 438/042; 438/044
출원번호 US-0255181 (2002-09-25)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    McCarthy Daniel P.
인용정보 피인용 횟수 : 83  인용 특허 : 48
초록

Included in the invention are laminates having layers of group III-V materials having low dislocation densities, semiconductor devices fabricated using low dislocation density group III-V layers, and methods for making these structures. Some of the inventions are concerned with GaN layers, GaN semiconductor devices, and semiconductor lasers fabricated from GaN materials. Detailed information on various example embodiments of the inventions are provided in the Detailed Description below, and the inventions are defined by the appended claims.

대표
청구항

1. A method of making a laminate material having regions of low-dislocation density, comprising:depositing a low temperature buffer layer of group III-V material on a substrate;depositing a pattern mask on the low temperature buffer layer, said pattern mask having a pattern intended to produce islands of low temperature buffer material separated by troughs;removing material from the low temperature buffer layer exposed by the pattern mask forming a formed low temperature buffer layer;removing the deposited pattern mask;depositing vertically grown high te...

이 특허에 인용된 특허 (48)

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