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Bipolar transistors with low-resistance emitter contacts

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/331
출원번호 US-0069668 (1998-04-29)
발명자 / 주소
  • Ahn, Kie Y.
  • Forbes, Leonard
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Schwegman, Lundberg, Woessner & Kluth, P.A.
인용정보 피인용 횟수 : 2  인용 특허 : 88

초록

Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high electrical resistance that poses an obstacle to improving switching speed and current gain of bipolar tra

대표청구항

1. A method of making an emitter contact for an emitter region of a bipolar transistor, the method comprising:forming a polysilicon structure over an emitter region position of a semiconductive substrate, the substrate having a surface at the emitter region position;providing a metal; andcross-diffu

이 특허에 인용된 특허 (88)

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이 특허를 인용한 특허 (2)

  1. Yeh, Ping-Chun; Yeh, Der-Chyang; Liu, Ruey-Hsin; Liu, Mingo, Schottky device.
  2. Kumagai, Naoki; Tsutsumi, Takashi; Sakai, Yoshiyuki; Oonishi, Yasuhiko; Fujimoto, Takumi; Fukuda, Kenji; Harada, Shinsuke; Okamoto, Mitsuo, Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device.
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