IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0143806
(2002-05-14)
|
우선권정보 |
JP-0153578 (2001-05-23); JP-0144466 (2001-05-15); JP-0157139 (2001-05-25) |
발명자
/ 주소 |
- Ohtsuka, Hisashi
- Okazaki, Yoji
- Katoh, Takayuki
|
출원인 / 주소 |
- Fuji Photo Film Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
9 |
초록
▼
A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho 3+ , Sm 3+ , Eu 3+ , Dy 3+ , Er 3+ , and Tb 3+ so that a laser beam is emitted from the solid-st
A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho 3+ , Sm 3+ , Eu 3+ , Dy 3+ , Er 3+ , and Tb 3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5 S 2 to 5 I 7 , from 5 S 2 to 5 I 8 , from 4 G 5/2 to 6 H 5/2 , from 4 G 5/2 to 6 H 7/2 , from 4 F 3/2 to 6 H 11/2 , from 5 D 0 to 7 F 2 , from 4 F 9/2 to 6 H 13/2 , from 4 F 9/2 to 6 H 11/2 , from 4 S 3/2 to 4 I 15/2 , from 2 H 9/2 to 4 I 13/2 , and from 5 D 4 to 7 F 5 . The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
대표청구항
▼
1. A laser-diode-excited solid-state apparatus comprising:a GaN-based compound laser diode which emits an excitation laser beam; anda solid-state crystal which is doped with Sm 3+ , and emits a solid-state laser beam generated by one of a first transition from 4 G 5/2 to 6 H 5/2 , a second tran
1. A laser-diode-excited solid-state apparatus comprising:a GaN-based compound laser diode which emits an excitation laser beam; anda solid-state crystal which is doped with Sm 3+ , and emits a solid-state laser beam generated by one of a first transition from 4 G 5/2 to 6 H 5/2 , a second transition from 4 G 5/2 to 6 H 7/2 , and a third transition from 4 F 3/2 to 6 H 11/12 when the solid-state laser crystal is excited with said excitation laser beam. 2. A laser-diode-excited solid-state laser apparatus according to claim 1, wherein said solid-state laser beam is generated by said first transition from 4 G 5/2 to 6 H 5/2 and is in a wavelength range of 556 to 576 nm. 3. A laser-diode-excited solid-state laser apparatus according to claim 1, wherein said solid-state laser beam is generated by said second transition from 4 G 5/2 to 6 H 7/2 and is in a wavelength range of 605 to 625 nm. 4. A laser-diode-excited solid-state laser apparatus according to claim 1, wherein said solid-state laser beam is generated by said third transition from 4 F 3/2 to 6 H 11/2 and is in a wavelength range of 640 to 660 nm. 5. A laser-diode-excited solid-state laser apparatus according to claim 1, wherein said solid-state laser crystal is doped with no rare-earth ion other than Sm 3+ . 6. A laser-diode-excited solid-state apparatus according to claim 1, wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials. 7. The laser-diode-excited solid-state laser apparatus of claim 1, wherein the laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials and emits an excitation laser beam. 8. The laser-diode-excited solid-state laser apparatus of claim 1, wherein the solid-state laser crystal comprises an Y 3 Al 5 O 12 crystal doped with and the doping concentration of the Sm 3+ ion is substantially 1 atomic percent; andwherein a backward end surface of the solid-state crystal is coated to be substantially reflective at a predetermined oscillation wavelength of the solid-state crystal and substantially antireflective at other oscillation wavelengths; andwherein a forward end surface of the solid-state crystal is coated as to have a transmittance that is substantially 1% at the predetermined oscillation wavelength of the solid-state crystal and substantially reflective at the other oscillation wavelengths. 9. The laser-diode-excited solid-state laser apparatus of claim 8, wherein the predetermined oscillation wavelength is substantially 566 nm. 10. The laser-diode-excited solid-state laser apparatus of claim 8, wherein the predetermined oscillation wavelength is substantially 615 nm. 11. The laser-diode-excited solid-state laser apparatus of claim 8, wherein the predetermined oscillation wavelength is substantially 650 nm. 12. A laser-diode-excited solid-state laser apparatus comprising:a laser diode which has an active layer made of one of InGaN, InGaNAs, and GaNAs materials, and emits an excitation laser beam;a solid-state laser crystal which is doped with at least one rare-earth ion including Sm 3+ , and emits a solid-state laser beam generated by one of a first transition from 4 G 5/2 to 6 H 5/2 , a second transition from 4 G 5/2 to 6 H 7/2 , and a third transition from 4 F 3/2 to 6 H 11/2 when the solid-state laser crystal is excited with said excitation laser beam; andan optical wavelength conversion element which converts said solid-state laser beam into ultraviolet laser light by wavelength conversion. 13. A laser-diode-excited solid-state laser apparatus according claim 12, wherein said solid-state laser beam is generated by said first transition from 4 G 5/2 to 6 H 5/2 and has a wavelength of about 566 nm, and said ultraviolet laser light has a wavelength of about 283 nm. 14. A laser-diode-excited solid-state laser apparatus according to claim 12, wherein said solid-state laser beam is generated by said second transition from 4 G 5/2 to 6 H 5/2 and has a wavelength of about 615 nm, and said ultraviolet laser light has a wavelength of about 308 nm. 15. A laser-diode-excited solid-state laser apparatus according to claim 12, wherein said solid-state laser beam is generated by said third transition from 4 F 3/2 to 6 H 11/2 and has a wavelength of about 650 nm, and said ultraviolet laser light has a wavelength of about 325 nm. 16. A laser-diode-excited solid-state laser apparatus according to claim 12, wherein said solid-state laser crystal is doped with no rare-earth ion other than Sm 3+ . 17. A laser-diode-excited solid-state laser apparatus according claim 12, wherein said optical wavelength conversion element is realized by a nonlinear optical crystal having periodic domain-inverted structure. 18. The laser-diode-excited solid-state laser apparatus of claim 12,wherein the optical wavelength conversion element is comprised of a nonlinear optical material which is comprised of a periodic domain-inverted structure in a MgO-doped LiNbO 3 crystal; andwherein the optical wavelength conversion element is located in between the solid-state crystal and a resonator mirror.
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