Two-wavelength antireflection film and objective lens coated with two-wavelength antireflection film
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G02B-021/02
G02B-001/10
출원번호
US-0424264
(2003-04-28)
발명자
/ 주소
Watanabe, Tadashi
Yamashita, Hideto
Kohsaka, Masato
Yamauchi, Takao
Kurata, Kiyonobu
출원인 / 주소
Olympus Optical Co., Ltd.
대리인 / 주소
Frishauf, Holtz, Goodman & Chick, P.C.
인용정보
피인용 횟수 :
7인용 특허 :
0
초록▼
A two-wavelength antireflection film to prevent light in two-wavelength regions of a deep-ultraviolet region and a region from a visible region to the near-infrared region on a surface of a substrate by coating the two-wavelength antireflection film on the surface of the substrate which penetrates l
A two-wavelength antireflection film to prevent light in two-wavelength regions of a deep-ultraviolet region and a region from a visible region to the near-infrared region on a surface of a substrate by coating the two-wavelength antireflection film on the surface of the substrate which penetrates light from the deep-ultraviolet region to the near-infrared region, comprising a first thin film which is formed on the substrate, and has a refractive index of 1.6 to 2.0 and optical film thickness of 0.4λ to 0.7λ for design main wavelength (λ), a second thin film which is formed on the first thin film, and has a refractive index of 1.35 to 1.55 and an optical film thickness of 0.05λ to 0.6λ for the design main wavelength λ, a third thin film which is formed on the second thin film, and has a refractive index of 1.6 to 2.0 and an optical film thickness of 0.1λ to 0.5λ for the design main wavelength λ, and a fourth thin film which is formed on the third thin film, and has a refractive index of 1.35 to 1.55 and an optical film thickness of 0.2λ to 0.35λ for the design main wavelength λ.
대표청구항▼
1. A two-wavelength antireflection film for antireflection in two-wavelength regions of light between 200 nanometers and 850 nanometers wherein one of the two-wavelength regions ranges from about 200 nanometers to 350 nanometers and includes a design main wavelength and the other two-wavelength regi
1. A two-wavelength antireflection film for antireflection in two-wavelength regions of light between 200 nanometers and 850 nanometers wherein one of the two-wavelength regions ranges from about 200 nanometers to 350 nanometers and includes a design main wavelength and the other two-wavelength region extends from about 650 nanometers to 850 nanometers comprising:a substrate which is transparent in wavelength regions in which the substrate is to be used;a first thin film which is formed on the substrate, and has a refractive index of 1.6 to 2.0 and optical film thickness of 0.4λ to 0.1λ for the design main wavelength (λ);a second thin film which is formed on the first thin film, and has a refractive index of 1.35 to 1.55 and an optical film thickness of 0.05λ to 0.6λ for the design main wavelength λ;a third thin film which is formed on the second thin film, and has a refractive index of 1.6 to 2.0 and an optical film thickness of 0.1λ to 0.5λ for the design main wavelength λ; anda fourth thin film which is formed on the third thin film, and has a refractive index of 1.35 to 1.55 and optical film thickness of 0.2λ to 0.35λ for design main wavelength λ. 2. The two-wavelength antireflection film according to claim 1, wherein, the substrate is quartz glass or fluorite glass. 3. The two-wavelength antireflection film according to claim 1, wherein,the first thin film, and the third thin film contain material which has a plurality of components chosen by a group of Al 2 O 3 , LaF 3 , NdF 3 , YF 3 , La 2 O 3 , and mixture or compound thereof, andthe second thin film and the fourth thin film contain material which has a plurality of components chosen by a group of MgF 2 , S 1 O 2 , NaF, LiF, and mixture or compound thereof. 4. The two-wavelength antireflection film according to claim 1, wherein an incident angle of the light of the design main wavelength is set within a range of 0° to 70°. 5. The two-wavelength antireflection film according to claim 1, wherein the design main wavelength is 248 nm. 6. The two-wavelength antireflection film according to claim 5, whereina wavelength which performs antireflection includes two wavelength regions of a wavelength in vicinity of main design wavelength and a wavelength from 650 to 800 nm,an optical film thickness of the first thin film is 0.4λ to 0.6λ,an optical film thickness of the second thin film is 0.4λ to 0.6λ,an optical film thickness of the third thin film is 0.1λ to 0.3λ, andan optical film thickness of the fourth thin film is from 0.35λ to 0.2λ. 7. The two-wavelength antireflection film according to claim 5, wherein,a wavelength which performs antireflection includes two wavelength regions of a wavelength in vicinity of main design wave length and a wavelength in the vicinity of 750 nm,the first thin film and the third thin film include mixture of Al 3 O 3 and La 2 O 3 , and the second thin film and fourth thin film include MgF 2 ,an optical film thickness of the first thin film is 0.4λ to 0.6λ,an optical film thickness of the second thin film is 0.4λ to 0.6λ,an optical film thickness of the third thin film is 0.2λto 0.3λ, andan optical film thickness of the fourth thin film is 0.2λ to 0.3λ. 8. The two-wavelength antireflection film according to claim 5, wherein, a wavelength which performs antireflection includes two wavelength regions of a wavelength in vicinity of main design wavelength and a wavelength from 550 to 650 nm,an optical film thickness of the first thin film is 0.5λ to 0.7λ,an optical film thickness of the second thin film is 0.05λ to 0.2λ,an optical film thickness of the third thin film is 0.25λ to 0.5λ, andan optical film thickness of the fourth thin film is 0.2λ to 0.35λ. 9. The two-wavelength antireflection film according to cla im 5, wherein a wavelength which performs antireflection includes two wavelength regions of a wavelength in vicinity of main design wave length and a wavelength in vicinity of 600 nm,the first thin film and the third thin film include mixture of Al 2 O 3 and La 2 O 3 , and the second thin film and fourth thin film include MgF 2 ,an optical film thickness of the first thin film is 0.6λ to 0.7λ,an optical film thickness of the second thin film is 0.05λ to 0.1λ,an optical film thickness of the third thin film is 0.25λ to 0.35λ, andan optical film thickness of the second thin film is 0.25λ to 0.35λ. 10. An objective lens used for an optical equipment, which performs an observation by the light of the deep-ultraviolet region wavelength of 300 nm or less and has a focusing mechanism (auto focus) in the wavelength region from a visible region to a near-infrared region, comprising a plurality of single lenses, whereineach of the plurality of single lenses has a two-wavelength antireflection film according to claim 1 on the surface thereof. 11. The objective lens according to claim 10, further comprisinga first lens group which contains a plurality of single lenses having positive lens and negative lens whose medium are different from each other and has negative power as a whole; anda second lens group which is arranged from the first lens group to the object side, and contains a plurality of single lenses having positive lens and negative lens whose medium are different form each other, whereinthe first and second lens groups have air intervals between the positive lens and negative lens, respectively, anda numerical aperture is 0.7 or more.
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