IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0129998
(2000-11-09)
|
우선권정보 |
DE-0054613 (1999-11-12) |
국제출원번호 |
PCT/US00/30983
(2000-11-09)
|
국제공개번호 |
WO01/34310
(2001-05-17)
|
발명자
/ 주소 |
- Bell, Jane
- Heyer, Joachim
- Hupe, Jü
- rgen
- Kalker, Ingo
- Kleinfeld, Marlies
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
6 인용 특허 :
8 |
초록
▼
The invention describes a process for non-galvanic tin plating of copper and copper alloys by precipitation of tin from methanesulphonic acid and tin-containing electrolytes, containing a complexing agent. In describing a process by which a durable tin layer which can be soldered is a created, which
The invention describes a process for non-galvanic tin plating of copper and copper alloys by precipitation of tin from methanesulphonic acid and tin-containing electrolytes, containing a complexing agent. In describing a process by which a durable tin layer which can be soldered is a created, which, at the same time, prevents liberation of the base material, this invention discloses that the electrolytes have at least one foreign metal added to form a diffusion barrier in the layer.
대표청구항
▼
1. A bath for non-galvanic plating of a tin layer onto a copper or copper alloy base layer, the bath comprising:a tin-containing electrolyte;an acid;a complexing agent;a foreign metal which suppresses diffusion of a base layer material through the tin layer; andan antioxidant. 2. The bath of claim 1
1. A bath for non-galvanic plating of a tin layer onto a copper or copper alloy base layer, the bath comprising:a tin-containing electrolyte;an acid;a complexing agent;a foreign metal which suppresses diffusion of a base layer material through the tin layer; andan antioxidant. 2. The bath of claim 1 wherein the concentration of tin in the bath is 1 to 30 grams/liter. 3. The bath of claim 1 wherein the tin-containing electrolyte comprises a bivalent tin salt. 4. The bath of claim 1 wherein the bivalent tin salt comprises tin methanesulfonate. 5. The bath of claim 1 wherein the bath has a pH of 0 to 3. 6. The bath of claim 1 wherein the acid comprises methanesulfonic acid. 7. The bath of claim 6 wherein the concentration of methanesulfonic acid in the bath is 5 to 200 grams/liter. 8. The bath of claim 1 wherein the complexing agent comprises thiourea or a thiourea derivative. 9. The bath of claim 8 wherein the concentration of thiourea or thiourea derivative is 10-200 grams/liter. 10. The bath of claim 1 further comprising a wetting agent. 11. The bath of claim 1 wherein the concentration of the wetting agent in the bath is 1 to 10 grams/liter. 12. A bath for non-galvanic plating of a tin layer onto a copper or copper alloy base layer, the bath comprising:a tin-containing electrolyte, wherein the concentration of tin in the bath is 1 to 30 grams/liter;an acid;a complexing agent; anda foreign metal which suppresses diffusion of a base layer material through the tin layer, wherein the foreign metal is indium in a concentration of 1 to 500 milligrams/liter. 13. A bath for non-galvanic plating of a diffusion-stable tin layer onto a copper or copper alloy base layer, the bath consisting essentially of thiourea, methanesulfonic acid, tin methanesulfonate, a wetting agent, and bismuth. 14. The bath of claim 13 wherein the concentration, in the bath, of the thiourea is 100 grams/liter, of the methanesulfonic acid is 100 grams/liter, of tin is 5 grams/liter, of the wetting agent is 5 grams/liter, and of the bismuth is 30 milligrams/liter. 15. A bath for non-galvanic plating of a diffusion-stable tin layer onto a copper or copper alloy base layer, the bath consisting essentially of thiourea, methanesulfonic acid, tin methanesulfonate, a wetting agent, an antioxidant, and titanium. 16. The bath of claim 15 wherein the concentration, in the bath, of the thiourea is 100 grams/liter, of the methanesulfonic acid is 100 grams/liter, of tin is 15 grams/liter, of the wetting agent is 3 grams/liter, of the antioxidant is 5 grams/liter, and of the titanium is 5 milligrams/liter. 17. A bath for non-galvanic plating of a diffusion-stable tin layer onto a copper or copper alloy base layer, the bath consisting essentially of thiourea, methanesulfonic acid, tin methanesulfonate, a wetting agent, an antioxidant, and indium. 18. The bath of claim 17 wherein the concentration, in the bath, of the thiourea is 120 grams/liter, of the methanesulfonic acid is 140 grams/liter, of tin is 15 grams/liter, of the wetting agent is 5 grams/liter, of the antioxidant is 5 grams/liter, and of the indium is 50 milligrams/liter. 19. A process for plating a tin layer onto a copper or copper alloy base layer, the process comprising:contacting the copper or copper alloy base layer with a bath comprising a tin-containing electrolyte, an acid, a complexing agent, and a foreign metal which suppresses diffusion of a base layer material through the tin layer, wherein the concentration of tin in the bath is in the range of 1 to 30 grams/liter and the concentration of foreign metal in the bath is in the range of 1 to 500 mg/L; andnon-galvanically precipitating tin and the foreign metal from the bath onto the base layer to thereby form a tin metal layer on the substrate with a diffusion barrier of the foreign metal therein. 20. The process of claim 19 wherein the tin-containing electrolyte comprises a bivalent tin salt. 21. The process of claim 20 wherein the bivalent tin salt comp rises tin methanesulfonate. 22. The process of claim 21 wherein the bath has a pH of 0 to 3. 23. The process of claim 22 wherein the acid comprises methanesulfonic acid. 24. The process of claim 23 wherein the concentration of methanesulfonic acid in the bath is 5 to 200 grams/liter. 25. The process of claim 24 wherein the complexing agent comprises thiourea or a thiourea derivative and the concentration of the complexing agent in the bath is 10-200 grams/liter. 26. The process of claim 19 wherein the foreign metal is selected from the group consisting of silver, bismuth, nickel, titanium, zirconium, indium, and mixtures thereof. 27. The process of claim 19 wherein the bath further comprises a wetting agent and the concentration of the wetting agent in the bath is 1 to 10 grams/liter. 28. The process of claim 19 wherein the bath further comprises a wetting agent. 29. The process of claim 19 wherein the foreign metal is indium. 30. The process of claim 19 wherein the foreign metal is indium and the bath further comprises a wetting agent. 31. The process of claim 19 wherein the foreign metal is indium and the bath further comprises an antioxidant. 32. The process of claim 19 wherein the foreign metal is indium and the bath further comprises an antioxidant and a wetting agent. 33. The process of claim 19 wherein the foreign metal is bismuth. 34. The process of claim 19 wherein the foreign metal is bismuth and the bath further comprises a wetting agent. 35. The process of claim 19 wherein the foreign metal is bismuth and the bath further comprises an antioxidant. 36. The process of claim 19 wherein the foreign metal is bismuth and the bath further comprises an antioxidant and a wetting agent. 37. A process for plating a tin layer onto a copper or copper alloy base layer, the process comprising:contacting the copper or copper alloy base layer with a bath at a pH of 0 to 3 comprising tin methanesulfonate, methanesulfonic acid, a complexing agent of thiourea or a thiourea derivative in a concentration in the bath between 10 and 200 g/L, a wetting agent in a concentration in the bath between 1 and 10 g/L, an antioxidant, and a foreign metal selected from the group consisting of silver, bismuth, nickel, titanium, zirconium, indium, and mixtures thereof; andnon-galvanically precipitating tin and the foreign metal from the bath onto the base layer. 38. A process for plating a tin layer onto a copper or copper alloy base layer, the process comprising:contacting the copper or copper alloy base layer with a bath comprising a tin-containing electrolyte, an acid, a complexing agent, an antioxidant, and a foreign metal which suppresses diffusion of a base layer material through the tin layer; andnon-galvanically precipitating tin and the foreign metal from the bath onto the base layer. 39. The process of claim 38 wherein the tin-containing electrolyte comprises a bivalent tin salt. 40. The process of claim 39 wherein the bivalent tin salt comprises tin methanesulfonate. 41. The process of claim 38 wherein the bath has a pH of 0 to 3. 42. The process of claim 38 wherein the complexing agent comprises thiourea or a thiourea derivative and the concentration of the complexing agent in the bath is 10-200 grams/liter. 43. The process of claim 38 wherein the foreign metal is selected from the group consisting of silver, bismuth, nickel, titanium, zirconium, indium, and mixtures thereof. 44. The process of claim 38 wherein the bath further comprises a wetting agent. 45. The process of claim 38 wherein the foreign metal is indium. 46. The process of claim 38 wherein the foreign metal is bismuth. 47. A process for plating a tin layer onto a copper or copper alloy base layer, the process comprising:contacting the copper or copper alloy base layer with a bath consisting essentially of thiourea, methanesulfonic acid, tin methanesulfonate, a wetting agent, an antioxidant, and titanium; andnon-galvanically precipitating tin and titanium from the bath onto th e base layer whereby the titanium diffusion of material from the base layer material through the tin layer. 48. The process of claim 47 wherein the concentration, in the bath, of the thiourea is 100 grams/liter, of the methanesulfonic acid is 100 grams/liter, of tin is 15 grams/liter, of the wetting agent is 3 grams/liter, of the antioxidant is 5 grams/liter, and of the titanium is 5 milligrams/liter. 49. A process for plating a tin layer onto a copper or copper alloy base layer, the process comprising:contacting the copper or copper alloy base layer with a bath consisting essentially of thiourea, methanesulfonic acid, tin methanesulfonate, a wetting agent, an antioxidant, and indium; andnon-galvanically precipitating tin and titanium from the bath onto the base layer whereby the titanium diffusion of material from the base layer material through the tin layer. 50. The process of claim 49 wherein the concentration, in the bath, of the thiourea is 120 grams/liter, of the methanesulfonic acid is 140 grams/liter, of tin is 15 grams/liter, of the wetting agent is 5 grams/liter, of the antioxidant is 5 grams/liter, and of the indium is 50 milligrams/liter.
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