초록 ▼

A thin film hydrogen getter and EMI shielding are provided for protecting GaAs circuitry sealed in an hermetic package. The thin film getter comprises a multilayer metal film that is deposited by vacuum evaporation techniques onto a conductive metal, such as aluminum or copper, that serves as the EM

A thin film hydrogen getter and EMI shielding are provided for protecting GaAs circuitry sealed in an hermetic package. The thin film getter comprises a multilayer metal film that is deposited by vacuum evaporation techniques onto a conductive metal, such as aluminum or copper, that serves as the EMI shielding. The conductive layer is first formed on an interior surface. The multilayer hydrogen getter film comprises (1) a titanium film and (2) a palladium film that is deposited on the titanium film. Both the titanium and the palladium are deposited during the same coating process run, thereby preventing the titanium from being oxidized. The palladium continues to prevent the titanium from being oxidized once the getter is exposed to the atmosphere. However, hydrogen is easily able to diffuse through the palladium into the titanium where it is chemically bound up, since palladium is highly permeable to hydrogen.

대표청구항 ▼

1. A combination of (a) a hydrogen getter for gettering hydrogen evolved from packaging materials employed in a device comprising hermetically-sealed GaAs integrated circuitry employing at least one interconnect frame and (b) an EMI shield for shielding internal signals, comprising:(a) a layer of an

1. A combination of (a) a hydrogen getter for gettering hydrogen evolved from packaging materials employed in a device comprising hermetically-sealed GaAs integrated circuitry employing at least one interconnect frame and (b) an EMI shield for shielding internal signals, comprising:(a) a layer of an electrically conductive metal for providing electromagnetic interference shielding, formed on surfaces of said interconnect frame;(b) a layer of titanium for absorbing and chemically binding up said hydrogen, formed on said layer of electrically conductive metal; and(c) a layer of palladium for preventing oxidation of said titanium, but permeable to said hydrogen, formed on said layer of titanium. 2. The combination of claim 1 wherein said titanium has a total mass larger than that given by the following equation:where M Ti is the mass of titanium, Q eff is the rate of hydrogen production from said packaging materials, and T L is a specified lifetime of said device, and wherein said palladium has a thickness of about 2,000 to 6,000 Å. 3. The combination of claim 1 wherein said layer of said electrically conductive metal has a thickness ranging from 5 to 6 skin depths of wave propagation media. 4. The combination of claim 3 wherein said electrically conductive metal is selected from the group consisting of aluminum and copper. 5. The combination of claim 4 wherein said layer of said electrically conductive metal comprises aluminum and wherein said hydrogen getter further includes a layer of titanium for adhering said aluminum layer to said surface of said interconnect frame. 6. The combination of claim 5 wherein said adhering layer of titanium has a thickness of about 20 nm. 7. A method for fabricating a combination of (a) a hydrogen getter for gettering hydrogen evolved from packaging materials employed in a device comprising hermetically-sealed GaAs integrated circuitry employing at least one interconnect frame and (b) an EMI shielding for shielding internal signals, said method comprising:(a) forming a layer of an electrically conductive metal for providing electromagnetic interference shielding on surfaces of said interconnect frame;(b) vacuum-depositing a layer of titanium for absorbing and chemically binding up said hydrogen, formed on said layer of electrically conductive metal; and(c) vacuum-depositing a layer of palladium for preventing oxidation of said titanium, but permeable to said hydrogen, on said layer of titanium, said vacuum deposition of both said titanium layer and said palladium layer being done sequentially during a single coating run to thereby prevent oxidation of said titanium layer. 8. The method of claim 7 wherein said titanium has a total mass larger than that given by the following equation:where M Ti is the mass of titanium, Q eff is the rate of hydrogen production from said interconnect frame, and T L is a specified lifetime of said device, and wherein said palladium has a thickness of about 2,000 to 6,000 Å. 9. The method of claim 7 wherein said layer of said electrically conductive metal has a thickness ranging from 5 to 6 skin depths of wave propagation media. 10. The method of claim 9 wherein said electrically conductive metal is selected from the group consisting of aluminum and copper. 11. The method of claim 10 wherein said layer of said electrically conductive metal comprises aluminum and wherein said hydrogen getter further includes a layer of titanium for adhering said aluminum layer to said surface of said interconnect frame. 12. The method of claim 11 wherein said adhering layer of titanium has a thickness of about 20 nm. 13. The method of claim 10 wherein said layer of electrically conductive material comprises copper and is electroless-deposited on said surface of said interconnect frame. 14. A hydrogen getter for gettering hydrogen evolved from packaging materials employed in a transmit/receive module configured to transmit and receive electromagnetic radiation over a predetermined portion of the electromagnetic spectrum, said transmit/receive module comprising a least one frame component formed as a single piece from a synthetic resin dielectric material, said frame component configured to support a plurality of electrical connectors, said hydrogen getter comprising a thin film coating on at least one surface of said frame component, said thin film coating comprising:(a) a layer of titanium for absorbing and chemically binding up said hydrogen, formed on said at least one surface; and(b) a layer of palladium for preventing oxidation of said titanium, but permeable to said hydrogen, formed on said layer of titanium. 15. The hydrogen getter of claim 14 wherein said titanium has a total mass larger than that given by the following equation:where M Ti is the mass of titanium, Q eff is the rate of hydrogen production from said packaging materials, and T L is a specified lifetime of said transmit/receive module, and wherein said palladium has a thickness of about 2,000 to 6,000 Å. 16. The hydrogen getter of claim 14 further including a layer of an electrically conductive metal for providing electromagnetic interference shielding, formed between said layer of titanium and said surface of said frame component. 17. The hydrogen getter of claim 16 wherein said layer of said electrically conductive metal has a thickness ranging from 5 to 6 skin depths of wave propagation media. 18. The hydrogen getter of claim 17 wherein said electrically conductive metal is selected from the group consisting of aluminum and copper. 19. The hydrogen getter of claim 18 wherein said layer of said electrically conductive metal comprises aluminum and wherein said hydrogen getter further includes a layer of titanium for adhering said aluminum layer to said surface of said frame component. 20. The hydrogen getter of claim 19 wherein said adhering layer of titanium has a thickness of about 20 nm.