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Electroless deposition method over sub-micron apertures

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-028/00
  • B05D-005/12
출원번호 US-0059822 (2002-01-28)
발명자 / 주소
  • Gandikota, Srinivas
  • McGuirk, Chris R.
  • Padhi, Deenesh
  • Malik, Muhammad Atif
  • Ramanathan, Sivakami
  • Dixit, Girish A.
  • Cheung, Robin
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Moser, Patterson & Sheridan
인용정보 피인용 횟수 : 23  인용 특허 : 62

초록

An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinu

대표청구항

1. A method of depositing a conductive material in a sub-micron feature formed on a substrate structure of a substrate, comprising:depositing a catalytic layer by electroless deposition, the catalytic layer comprising a metal selected from the group consisting of a noble metal, a semi-noble metal, a

이 특허에 인용된 특허 (62)

  1. Shacham Yosef Y. (Ithaca NY) Bielski Roman (Ithaca NY), Alkaline free electroless deposition.
  2. Kellam Mark, Aluminum-palladium alloy for initiation of electroless plating.
  3. Chen LinLin, Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece.
  4. Cheung Robin ; Sinha Ashok ; Tepman Avi ; Carl Dan, Apparatus for electro-chemical deposition with thermal anneal chamber.
  5. Chen Ling ; Ganguli Seshadri ; Zheng Bo ; Wilson Samuel ; Marcadal Christophe, CVD method of depositing copper films by using improved organocopper precursor blend.
  6. Brummett Charles Roscoe (Harrisburg PA) Shaak Ray Ned (Lebanon PA) Andrews Daniel Marshall (Harrisburg PA), Catalyst for electroless deposition of metals.
  7. Brummett Charles Roscoe (Harrisburg PA) Shaak Ray Ned (Lebanon PA) Andrews Daniel Marshall (Harrisburg PA), Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates.
  8. Stevens Joe, Cathode contact ring for electrochemical deposition.
  9. Liu Chung-Shi,TWX ; Chang Chung-Long,TWX ; Yu Chen-Hua,TWX, Copper chemical-mechanical-polishing (CMP) dishing.
  10. Hsiung Chiung-Sheng,TWX ; Hsieh Wen-Yi,TWX ; Lur Water,TWX, Copper damascene technology for ultra large scale integration circuits.
  11. Lee Chwan-Ying,TWX ; Huang Tzuen-Hsi,TWX, Copper metallization of USLI by electroless process.
  12. Nidola Antonio (Milan ITX) Martelli Gian N. (Milan ITX), Deposition of catalytic electrodes on ion-exchange membranes.
  13. Zheng Bo ; Chen Ling ; Mak Alfred ; Chang Mei, Deposition of copper with increased adhesion.
  14. Landau Uziel ; D'Urso John J. ; Rear David B., Electro deposition chemistry.
  15. Yezdi Dordi ; Joe Stevens ; Roy Edwards ; Bob Lowrance ; Michael Sugarman ; Mark Denome, Electro-chemical deposition cell for face-up processing of single semiconductor substrates.
  16. Dordi Yezdi ; Olgado Donald J. ; Morad Ratson ; Hey Peter ; Denome Mark ; Sugarman Michael ; Lloyd Mark ; Stevens Joseph ; Marohl Dan ; Shin Ho Seon ; Ravinovich Eugene ; Cheung Robin ; Sinha Ashok K, Electro-chemical deposition system.
  17. Dubin Valery M. ; Shacham-Diamand Yosef ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K., Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications.
  18. Shacham-Diamand Yosi ; Nguyen Vinh ; Dubin Valery, Electroless deposition of metal films with spray processor.
  19. Uchida Hiroki,JPX ; Kiso Masayuki,JPX ; Nakamura Takayuki,JPX ; Kamitamari Tohru,JPX ; Susuki Rumiko,JPX ; Shimizu Koichiro,JPX, Electroless nickel plating solution and method.
  20. Mallory ; Jr. Glenn O. (Inglewood CA), Electroless nickel polyalloys.
  21. Semkow Krystyna W. ; O'Sullivan Eugene J., Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating.
  22. Bengston Jon E. (Newington CT), Electroless plating of nickel onto surfaces such as copper or fused tungston.
  23. Cane Frank N. (3058 Plumstead Way San Jose CA 95148), Electroless plating process for the manufacture of printed circuit boards.
  24. Mallory ; Jr. Glenn O. (Los Angeles CA), Electrolessly plated product having a polymetallic catalytic film underlayer.
  25. Hilgendorff Walter,DEX ; Kahn Gerhard,DEX ; Jordt Frauke,DEX, Filtration apparatus having channeled flow guide elements.
  26. Cheung Robin ; Carl Daniel A. ; Dordi Yezdi ; Hey Peter ; Morad Ratson ; Chen Liang-Yuh ; Smith Paul F. ; Sinha Ashok K., In-situ electroless copper seed layer enhancement in an electroplating system.
  27. Lakshmikanthan Jayant ; Stevens Joe, Inflatable compliant bladder assembly.
  28. Simpson Cindy Reidsema, Interconnect structure in a semiconductor device and method of formation.
  29. Yamazaki Shunpei,JPX, Manufacturing method of a semiconductor device.
  30. Mathieu Gaetan L., Method and apparatus for controlling plating over a face of a substrate.
  31. Vikram Pavate ; Murali Narasimhan, Method and apparatus of forming a sputtered doped seed layer.
  32. Goldstein Rachel (Givataim CT ILX) Kukanskis Peter E. (Watertown CT) Grunwald John J. (New Haven CT), Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence.
  33. Wu Cherng-Dean (Richfield MN), Method for controlling electroless magnetic plating.
  34. Iyer Ravi ; Vasilyeva Irina, Method for depositing a tungsten layer on silicon.
  35. Ehrsam Robert ; Raymond John L., Method for electroless nickel plating of metal substrates.
  36. Dubin Valery ; Ting Chiu, Method for fabricating copper-aluminum metallization.
  37. Bengston Jon E. (Newington CT) Larson Gary B. (Cheshire CT), Method for fabricating printed circuits.
  38. Cheung Robin ; Lopatin Sergey, Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure.
  39. Dubin Valery M., Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure.
  40. Allen Russell D. ; McFeely F. Read ; Noyan Cevdet I. ; Yurkas John J., Method for improving the morphology of refractory metal thin films.
  41. Chan Lap ; Ng Hou Tee,SGX, Method for planarized interconnect vias using electroless plating and CMP.
  42. Huggins Alan H. ; MacPherson John, Method of customizing integrated circuits by selective secondary deposition of layer interconnect material.
  43. Lopatin Sergey ; Achuthan Krishnashree, Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed.
  44. Nogami Takeshi ; Lopatin Sergey ; Joo Young-Chang, Method of forming copper/copper alloy interconnection with reduced electromigration.
  45. Lopatin Sergey ; Nogami Takeshi ; Pramanik Shekhar, Method of metal/polysilicon gate formation in a field effect transistor.
  46. Mallory ; Jr. Glenn O. (Los Angeles CA), Method of preparing substrate surface for electroless plating and products produced thereby.
  47. Doan Trung T. (Boise ID) Tuttle Mark E. (Boise ID), Method to form a low resistant bond pad interconnect.
  48. Uzoh Cyprian Emeka ; Greco Stephen Edward, Method to selectively fill recesses with conductive metal.
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  50. Kaja Suryanarayana (Hopewell Junction NY) Mukherjee Shyama P. (Hopewell Junction NY) O\Sullivan Eugene J. (Upper Nyack NY) Paunovic Milan (Port Washington NY), Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electrol.
  51. Ting Chiu ; Dubin Valery, Plated copper interconnect structure.
  52. Reynolds H. Vincent, Plating cell with horizontal product load mechanism.
  53. Reynolds H. Vincent, Plating cell with rotary wiper and megasonic transducer.
  54. Uchida Hiroki (Hirakata JPX) Kubo Motonobu (Hirakata JPX) Kiso Masayuki (Hirakata JPX) Hotta Teruyuki (Hirakata JPX) Kamitamari Tohru (Hirakata JPX), Process for electroless plating tin, lead or tin-lead alloy.
  55. Walsh Daniel P. (Peabody MA), Process for forming polyimide-metal laminates.
  56. Amelio William J. (Binghamton NY) Hume David W. (Binghamton NY) McBride Donald G. (Binghamton NY) Rickert Robert G. (Endwell NY), Process for preparing a substrate for subsequent electroless deposition of a metal.
  57. Kobayashi Takayuki (Yokohama JPX) Tamamura Ryo (Yokohama JPX), Process for preparing nickel layer.
  58. Schacham-Diamand Yosef ; Dubin Valery M. ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K. ; Desilva Melvin, Protected encapsulation of catalytic layer for electroless copper interconnect.
  59. Zhao Bin (Austin TX) Vasudev Prahalad K. (Austin TX) Dubin Valery M. (Cupertino CA) Shacham-Diamand Yosef (Ithaca NY) Ting Chiu H. (Saratoga CA), Selective electroless copper deposited interconnect plugs for ULSI applications.
  60. Calabrese Gary S. (North Andover MA) Calvert Jeffrey M. (Burke VA) Chen Mu-San (Ellicott MD) Dressick Walter J. (Fort Washington MD) Dulcey Charles S. (Washington DC) Georger ; Jr. Jacque H. (Holden , Selective metallization process.
  61. DuRose Arthur H. (Pinellas Park FL), Two-step preplate system for polymeric surfaces.
  62. Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.

이 특허를 인용한 특허 (23)

  1. Sharma, Sunity K.; Fornasiero, Francesco; Dhau, Jaspreet Singh, Conductive pattern formation.
  2. Weidman, Timothy W.; Wijekoon, Kapila P.; Zhu, Zhize; Gelatos, Avgerinos V. (Jerry); Khandelwal, Amit; Shanmugasundram, Arulkumar; Yang, Michael X.; Mei, Fang; Moghadam, Farhad K., Contact metallization scheme using a barrier layer over a silicide layer.
  3. Dory,Thomas S.; Wong,Kenneth N., Deep via seed repair using electroless plating chemistry.
  4. Chen, Qingyun; Valverde, Charles; Paneccasio, Vincent; Petrov, Nicolai; Stritch, Daniel; Witt, Christian; Hurtubise, Richard, Defectivity and process control of electroless deposition in microelectronics applications.
  5. Chen, Qingyun; Valverde, Charles; Paneccasio, Vincent; Petrov, Nicolai; Stritch, Daniel; Witt, Christian; Hurtubise, Richard, Defectivity and process control of electroless deposition in microelectronics applications.
  6. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  7. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  8. Sharma, Sunity; Dhau, Jaspreet Singh, Flexible circuit chemistry.
  9. Sharma, Sunity; Dhau, Jaspreet Singh, Flexible circuit formation.
  10. Sharma, Sunity; Dhau, Jaspreet Singh, Flexible circuits.
  11. Sharma, Sunity; Dhau, Jaspreet Singh, Flexible circuits.
  12. Sharma, Sunity Kumar; Beavers, Jr., Alex Newsom; Furst, Thomas, Indium-less transparent metalized layers.
  13. Nakahira, Shinichi; Okazaki, Kentaro; Miyauchi, Yasuaki, Method and apparatus for producing conductive material.
  14. Lopatin,Sergey; Shanmugasundram,Arulkumar; Lubomirsky,Dmitry; Pancham,Ian A., Method for forming CoWRe alloys by electroless deposition.
  15. Wang,Ching Tang; Niao,Chin Tung; Su,Keng Hui; Chiu,Huang Sheng; Wang,Min Hsin, Method of forming a silicon nitride layer.
  16. Johnston, Steven W.; Cheng, Chin-Chang, Method of making a bottomless via.
  17. Ivanov, Igor C.; Zhang, Weiguo, Methods and systems for processing a microelectronic topography.
  18. Ivanov,Igor C.; Zhang,Weiguo, Methods and systems for processing a microelectronic topography.
  19. Lopatin,Sergey; Shanmugasundram,Arulkumar; Emami,Ramin; Fang,Hongbin, Pretreatment for electroless deposition.
  20. Lubomirsky, Dmitry; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Kovarsky, Nicolay Y.; Wijekoon, Kapila, Process for electroless copper deposition.
  21. Dhau, Jaspreet Singh; Sharma, Sunity K., Reduced porosity copper deposition.
  22. Lopatin,Sergey D.; Shanmugasundrum,Arulkumar; Shacham Diamand,Yosef, Silver under-layers for electroless cobalt alloys.
  23. Edwards,Charles O.; Albertalli,David; Gratchev,Oleg, Temperature controlled vacuum chuck.
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