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Substrate monitoring method and apparatus

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05H-001/00
  • B05C-011/00
  • C23C-014/54
출원번호 US-0545110 (2000-04-06)
발명자 / 주소
  • Lill, Thorsten B.
  • Grimbergen, Michael N.
  • Trevor, Jitske
  • Jiang, Wei-Nan
  • Chinn, Jeffrey
출원인 / 주소
  • Applied Materials Inc
대리인 / 주소
    Janah & Associates
인용정보 피인용 횟수 : 10  인용 특허 : 25

초록

A substrate processing apparatus comprises a chamber 28 capable of processing a substrate 20 . A radiation source 58 provides radiation that is at least partially reflected from the substrate in the chamber. A radiation detector 62 is provided to detect the reflected radiation and generate a signal.

대표청구항

1. A substrate processing apparatus comprising:a process chamber capable of processing a substrate, the substrate having overlying and underlying materials;a radiation source outside the process chamber, the radiation source capable of providing non-polarized radiation that is at least partially ref

이 특허에 인용된 특허 (25)

  1. Flinchbaugh Bruce E. (Dallas TX) Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Reese Jon (Waxahachie TX), Apparatus and method for production process diagnosis using dynamic time warping.
  2. Christol James T. (Cupertino CA) Burchard John S. (Santa Clara CA), End point detection in etching wafers and the like.
  3. Angell David (Poughkeepsie NY) Radens Carl J. (Poughkeepsie NY), End-point detection.
  4. Grimbergen Michael N. ; Lill Thorsten B., Endpoint detection for semiconductor processes.
  5. Michael N. Grimbergen ; Thorsten B. Lill, Endpoint detection in the fabrication of electronic devices.
  6. Reder, Steven E.; Bhatt, Hemanshu D., In situ measurement.
  7. Sternheim Marek A. (Livermore CA) van Gelder Willem (Lehighton PA), Interferometric method and apparatus for measuring etch rate and fabricating devices.
  8. Heimann Peter A. (Clifton NJ) Moran Joseph M. (Berkeley Heights NJ) Schutz Ronald J. (Warren NJ), Interferometric methods and apparatus for device fabrication.
  9. Habegger Millard A. (Boulder CO), Interferometric process and apparatus for the measurement of the etch rate of opaque surfaces.
  10. Aspnes David Erik (Berkeley Heights NJ), Measurement of thin films by polarized light.
  11. Maung Sonny (Plano TX) Butler Stephanie W. (Plano TX) Henck Steven A. (Plano TX), Method and apparatus for process endpoint prediction based on actual thickness measurements.
  12. Bobel Friedrich (Uttenreuth DEX) Bauer Norbert (Erlangen DEX), Method and arrangement for determining the layer-thickness and the substrate temperature during coating.
  13. Busta Heinz H. (Park Ridge IL) Lajos Robert E. (Crystal Lake IL) Bhasin Kul B. (Schaumburg IL), Method for end point detection during plasma etching.
  14. Yu Chorng-Tao (Yorba Linda CA) Isaak Kenneth H. (Tustin CA), Method for film thickness endpoint control.
  15. Meyer Heinrich (Berlin DEX) Plieth Waldfried J. L. (Berlin DEX) Kurpjoweit Martin (Berlin DEX), Method of and device for inspecting and/or controlling metallization processes.
  16. Le Minh ; Chen Kuang Han ; Smith Taber H. ; Boning Duane S. ; Sawin Herbert H., Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra.
  17. Litvak Herbert E. (Cupertino CA), Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.
  18. Kleinknecht Hans P. (Bergdietikon CHX) Kane James (Zumikon CHX), Optically monitoring the thickness of a depositing layer.
  19. Hayasaki, Kei; Ito, Shinichi, Pattern forming method using photolithography.
  20. Schoenborn Philippe (San Jose CA), Plasma etching process control.
  21. Buck David Wallace ; Barna Gabriel G., Plasma etching with fast endpoint detector.
  22. Barna Gabriel G. (Richardson TX) Ratliff Charles (Richardson TX), Process and apparatus for detecting aberrations in production process operations.
  23. Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Flinchbaugh Bruce E. (Dallas TX) Gunturi Sarma S. (Richardson TX) Lassiter Thomas W. (Garland TX) Love Robert L. (McKinney TX), Process and apparatus for detecting aberrations in production process operations.
  24. Kawahara Katsumi (Osaka JPX) Uchida Masami (Osaka JPX) Yoshioka Kazumi (Kyoto JPX) Ohta Takeo (Nara JPX) Horai Keiichiro (Osaka JPX), Process for manufacturing an optical recording medium.
  25. Brooks ; Jr. Edward A. (Novato CA) Bithell Roger M. (Novato CA), Process monitor and method thereof.

이 특허를 인용한 특허 (10)

  1. Watson, Heather Christine; Roberts, Jeffrey James, Assembly for electrical conductivity measurements in the piston cylinder device.
  2. Liphardt, Martin M.; Hale, Jeffrey S.; He, Ping; Pfeiffer, Galen L., Beam focusing and beam collecting optics with wavelength dependent filter element adjustment of beam area.
  3. Liphardt, Martin M.; Hale, Jeffrey S.; He, Ping; Pfeiffer, Galen L, Beam focusing and reflective optics.
  4. Lill, Thorsten; Singh, Harmeet; Paterson, Alex; Kamarthy, Gowri, Controlling ion energy within a plasma chamber.
  5. Lill, Thorsten; Singh, Harmeet; Paterson, Alex; Kamarthy, Gowri, Controlling ion energy within a plasma chamber.
  6. Yue, Hongyu; Lam, Hieu A., Method and apparatus for determining an etch property using an endpoint signal.
  7. Usui, Tatehito; Hirota, Kosa; Inoue, Satomi; Nakamoto, Shigeru; Fukuchi, Kousuke, Plasma processing apparatus and plasma processing method.
  8. Valcore, Jr., John C., Soft pulsing.
  9. Liphardt, Martin M., System for naturally adjusting the cross-sectional area of a beam of electromagnetic radiation entered to a focusing means.
  10. Cohen, Yoel; Finarov, Moshe; Vinokur, Klara, Thin films measurement method and system.
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