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Data retention of a ferroelectric transistor is extended by intecting holes or electrons into the ferroelectric transistor when power is removed. The ferroelectric FET has a mechanism to trap charge in a buffer dielectric layer or in the ferroelectric layer sandwiched between a top electrode and a s

Data retention of a ferroelectric transistor is extended by intecting holes or electrons into the ferroelectric transistor when power is removed. The ferroelectric FET has a mechanism to trap charge in a buffer dielectric layer or in the ferroelectric layer sandwiched between a top electrode and a silicon substrate. The state of polarization is detected before power is removed from the ferroelectric FET. Charge is injected into the ferroelectric FET to produce a first threshold voltage when a first polarization state is determined before power is removed. Charge is removed from the ferroelectric FET to produce a second threshold voltage when a second polarization state is determined before power is removed. When the ferroelectric FET is powered up again, the state of charge injected is determined. The ferroelectric FET is then polarized to correspond to a first threshold voltage when the charge state corresponding to the first threshold is determined. The ferroelectric FET is polarized to correspond to a second threshold voltage when a charge state corresponding to the second threshold is determined.

대표청구항 ▼

1. A ferroelectric field effect transistor (FET) exhibiting hysteresis, comprising:a semiconductor substrate of a first conductivity type;a source, said source comprising a region of said semiconductor substrate doped to have a conductivity opposite that of said semiconductor substrate;a drain, spac

1. A ferroelectric field effect transistor (FET) exhibiting hysteresis, comprising:a semiconductor substrate of a first conductivity type;a source, said source comprising a region of said semiconductor substrate doped to have a conductivity opposite that of said semiconductor substrate;a drain, spaced from said source, said drain comprising a portion of said semiconductor substrate doped to have a conductivity opposite of said substrate,a channel being formed in the space between said source and said drain;a ferroelectric layer overlaying the channel;a conductive electrode layer overlaying the ferroelectric layer;wherein charge is injected into and removed from the ferroelectric layer, the quantity of charge so stored being selected so as to provide the ferroelectric FET with a first threshold voltage and a first shifted threshold voltage when charge is stored and a second threshold voltage and a second shifted threshold voltage when charge is removed. 2. The FET of claim 1 wherein charge is injected into the ferroelectric FET to produce a first threshold voltage when a first polarization state is determined before power is removed. 3. The FET of claim 1 wherein charge is removed from the ferroelectric FET to produce a second threshold voltage when a second polarization state is determined before power is removed. 4. The FET of claim 1 further comprising a dielectric layer formed between said ferroelectric layer and conductive electrode layer. 5. The FET of claim 1 further comprising a dielectric layer formed between said channel and said ferroelectric layer. 6. The FET of claim 5 wherein charge is injected into the first dielectric layer. 7. The FET of claim 5 wherein the dielectric layer comprises silicon nitride. 8. The FET of claim 5 wherein the dielectric layer comprises silicon dioxide. 9. The FET of claim 5 wherein the dielectric layer comprises thermally grown silicon dioxide. 10. The FET of claim 5 wherein the dielectric layer comprises two or more dielectric sub-layers. 11. The FET of claim 5 wherein the dielectric layer comprises a silicon nitride layer overlying a silicon dioxide layer. 12. The FET of claim 1 wherein the conductive electrode layer comprises a polysilicon-containing material. 13. The FET of claim 1 wherein the ferroelectric layer comprises a material having the general formula AxMnyOz, where x, y, z vary from 0.1 to 10 and A is a rare earth selected from a group consisting of CE, Pr, Nd, Pm, Sm, Eu, GD, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y or Sc. 14. The FET of claim 1 wherein the ferroelectric layer comprises a low-dielectric ferroelectric material. 15. The FET of claim 1 wherein the ferroelectric layer is formed utilizing MOCVD. 16. The FET of claim 4 wherein the dielectric layer is formed utilizing either ALD and MOCVD. 17. The FET of claim 5 wherein the dielectric layer is formed utilizing either ALD or MOCVD. 18. The FET of claim 4 wherein the dielectric layer comprises a material with a dielectric constant of 10 and greater. 19. The FET of claim 5 wherein the dielectric layer comprises a material with a dielectric constant of 10 and greater. 20. The FET of claim 1 wherein charge is injected utilizing mechanisms selected from a group consisting of tunneling, Fowler-Nordheim tunneling, hot carrier injection, avalanche breakdown, and impact ionization. 21. The FET of claim 1 wherein the silicon substrate comprises a CMOS compatible substrate. 22. The FET of claim 1 wherein the silicon substrate comprises a silicon-on-insulator substrate.