초록 ▼

A structure for eliminating the influence of an antenna line connected to the patch electrode on the antenna characteristics of a patch antenna built in an MMIC is disclosed. A through-hole is formed in the antenna ground plane which is provided under the patch electrode with an interlayer insulatio

A structure for eliminating the influence of an antenna line connected to the patch electrode on the antenna characteristics of a patch antenna built in an MMIC is disclosed. A through-hole is formed in the antenna ground plane which is provided under the patch electrode with an interlayer insulation film therebetween, the antena line is provided in the side opposite to the patch electrode with respect to the antena ground plane, and the patch electrode and antenna line are connected to each other with a conductor passing through the trough-hole.

대표청구항 ▼

1. A high-frequency semiconductor device comprising:an antenna-ground plane provided above a semiconductor substrate, to be connected to a ground potential;a patch electrode provided on said antenna-ground plane with an interlayer insulation film therebetween;an antenna connection provided under sai

1. A high-frequency semiconductor device comprising:an antenna-ground plane provided above a semiconductor substrate, to be connected to a ground potential;a patch electrode provided on said antenna-ground plane with an interlayer insulation film therebetween;an antenna connection provided under said antenna-ground plane and connected to said patch electrode via a through-hole formed passing through said antenna-ground plane; anda line conductor provided on said antenna-ground plane with an interlayer insulation film therebetween, said line conductor forming a high-frequency transmission line together with said antenna-ground plane,wherein said antenna-ground plane is provided on a substantially entire surface of said semiconductor substrate. 2. A high-frequency semiconductor device as set forth in claim 1, wherein said antenna connection is an antenna line of a patterned conductor. 3. A high-frequency semiconductor device as set forth in claim 1, wherein said antenna connection is an active region formed in said semiconductor substrate. 4. A high-frequency semiconductor device as set forth in claim 1, wherein said interlayer insulation film is composed of a resin insulating material. 5. A high-frequency semiconductor device as set forth in claim 4, wherein said resin insulating material is a polyimide or benzocyclobutene. 6. A high frequency semiconductor device as set forth in claim 1, wherein said patch electrode has a rectangular shape or a circular shape. 7. A high-frequency semiconductor device as set forth in claim 1, wherein each of said patch electrode and antenna-ground plate is formed of a high conductive material. 8. A high frequency semiconductor device as set forth in claim 7, wherein said high conductive material is gold or a super conductor. 9. A high-frequency semiconductor device comprising:an antenna-ground plane provided above a semiconductor substrate, to be connected to a ground potential;a patch electrode provided on said antenna-ground plane with an interlayer insulation film therebetween;an antenna connection provided under said antenna-ground plane and connected to said patch electrode via a through-hole formed passing through said antenna-ground plane; anda line conductor provided on said antenna-ground plane with an interlayer insulation film therebetween, said line conductor forming a high-frequency transmission line together with said antenna-ground plane,wherein said antenna-ground plane is formed to extend to up to a region in which said antenna-ground plane has no longer any effect for antenna functions, and said line conductor is provided on said antenna-ground plane in said region. 10. A high-frequency semiconductor device as set forth in claim 9, further comprising:a ground plate provided between said antenna-ground plane and said semiconductor substrate and under said antenna connection, said ground plate being formed to extend over a substantially entire surface of said semiconductor substrate and to be connected to a ground potential; andanother line conductor provided on said ground plate with an interlayer insulation film therebetween, said another line conductor forming a high-frequency transmission line together with said ground plate. 11. A high-frequency semiconductor device as set forth in claim 9, further comprising a passive device provided under said antenna-ground plane, said passive device being any one of line conductors, capacitors, inductors or resistors. 12. A high-frequency semiconductor device as set forth in claim 9, wherein said antenna connection is an antenna line of a patterned conductor. 13. A high-frequency semiconductor device as set forth in claim 9, wherein said interlayer insulation film is composed of a resin insulating material. 14. A high-frequency semiconductor device as set forth in claim 13, wherein said resin insulating material is a polyimide or benzocyclobutene. 15. A high-frequency semiconductor device as set forth in claim 9, wherein said patch ele ctrode has a rectangular shape or a circular shape. 16. A high-frequency semiconductor device comprising:an antenna-ground plane provided above a semiconductor substrate, to be connected to a ground potential;a patch electrode provided on said antenna-ground plane with an interlayer insulation film therebetween;an antenna connection provided under said antenna-ground plane and connected to said patch electrode via a through-hole formed passing through said antenna-ground plane;a ground plate provided between said antenna-ground plane and said semiconductor substrate and under said antenna connection, said ground plate being formed to extend over a substantially entire surface of said semiconductor substrate and to be connected to a ground potential; anda line conductor provided on said ground plate with an interlayer insulation film therebetween, said line conductor forming a high-frequency transmission line together with said ground plate,wherein said antenna-ground plane and said line conductor are formed together on a common surface of said interlayer insulation film intervening between said line conductor and said ground plate. 17. A high frequency semiconductor device as set forth in claim 16, further comprising a passive device provided under said antenna-ground plane, said passive device being any one of line conductors, capacitors, inductors or resistors. 18. A high-frequency semiconductor device as set forth in claim 16, wherein said antenna connection is an antenna line of a patterned conductor. 19. A high-frequency semiconductor device as set forth in claim 16, wherein said interlayer insulation film is composed of a resin insulating material. 20. A high-frequency semiconductor device as set forth in claim 19, wherein said resin insulation material is a polyimide or benzocyclobutene. 21. A high-frequency semiconductor device as set forth in claim 16, wherein said patch electrode has a rectangular shape or a circular shape.