A family of extremely fine-grained alloys are used to make coatings or free-standing bodies having desirable properties for use as a heat-resistant and wear-resistant material. In an illustrative embodiment, the alloys are comprised of a multiplicity of alternate, microcrystalline or nanocrystalline
A family of extremely fine-grained alloys are used to make coatings or free-standing bodies having desirable properties for use as a heat-resistant and wear-resistant material. In an illustrative embodiment, the alloys are comprised of a multiplicity of alternate, microcrystalline or nanocrystalline films of tungsten metal and tungsten compound. The tungsten compound film may be comprised of a tungsten carbide or a tungsten boride. The tungsten films are the primary films. Their desirable characteristics, in addition to their very fine crystalline habit, per se, are the high strength, high hardness, high resilience, and high fracture energy which these fine crystallites foster. They may be manufactured by a chemical vapor deposition process in which reactive gas flows are rapidly switched to produce alternate films with abrupt hetero-junctions and thereby to produce the useful micro-crystalline habit. The unique synthesis method allows effective control of critical flaw size. The structure is such that the primary films may be made sufficiently thick so as to assure some desirable ductile behavior, but sufficiently thin so as to have high yield strength by dint of their microcrystalline size, and as to limit the size of any flaws. The secondary films are made of enough thickness to prevent the epitaxial growth from one primary film to the next-deposited primary film and thin enough so that they can not contain a flaw of critical size. In addition, the exterior surface of any body made by this method may have a sufficiently smooth surface that the strength of the body is determined by the bulk properties of the material and not by surface flaws.
대표청구항▼
1. A method of making a high strength alloy, the method comprising the steps of:depositing a Group VIB transition metal in a primary film by physical vapor deposition or chemical vapor deposition on a substrate;using the same deposition method to deposit an adherent film of silicon carbide having a
1. A method of making a high strength alloy, the method comprising the steps of:depositing a Group VIB transition metal in a primary film by physical vapor deposition or chemical vapor deposition on a substrate;using the same deposition method to deposit an adherent film of silicon carbide having a crystal habit different from the body-centered-cubic habit of the metal of the primary film and having limited solubility or reactivity with respect to said body-centered-cubic metal at the deposition and use temperatures of the alloy;wherein the deposited film of said silicon carbide is of a thickness sufficient to arrest the growth of the crystallites of the primary film and prevent epitaxial growth between adjoining primary microcrystalline films; andrepeating the alternate deposition of the adherent Group VIB transition metal films and the adherent silicon carbide films until a plurality of such alternate films is made to the required thickness of the coating or body. 2. A method of making a high strength alloy of a Group VIB transition metal, the method comprising the steps of:supplying a flow of a precursor gas containing said Group VIB transition metal to a gas-tight, anaerobic, chemical-vapor-deposition, reactor vessel containing a heated mandrel or substrate;decomposing said precursor gas on the heated mandrel or substrate to make a deposited primary film of said Group VIB transition metal, the thickness of which is not greater than 1350 nm;continuing the flow of said precursor gas and adding an additional decomposable gas containing either a non-metal or semi-metal capable of combining with said Group VIB transition metal to make a hard metal compound of said metal;passing the mixture of said precursor gas and said additional gas over the heated mandrel or substrate and decomposing them to form a secondary film of said hard metal compound of said Group VIB transition metal, which secondary film is adherent to the previously-deposited primary film, and which secondary film is of sufficient thickness to arrest the growth of the crystallites of the primary films and to interrupt the epitaxial growth of the metal crystallites of the primary film;stopping the flow of the additional gas, but continuing the flow of the gas containing said Group VIB transition metal and decomposing said gas on the heated mandrel or substrate to make another deposited primary film of said metal, the thickness of which does not exceed 1350 nanometers, which primary film is adherent to the previously-deposited secondary film;again adding the additional gas to repeat the formation of another secondary film of a hard metal compound, adherent to the previously-deposited primary film; andcontinuing the alternate deposition of primary and secondary films until the desired thickness of the alloy is achieved. 3. The method of claim 2 further wherein the secondary films formed each have a thickness that is less than the thickness of the primary films. 4. The method of claim 2 wherein said the secondary films formed each have a thickness that is greater than the thickness of the primary films but less than 400 nm. 5. The method of claim 2 wherein the primary film deposited is tungsten. 6. The method of claim 5 wherein the secondary film deposited is tungsten carbide. 7. The method of claim 5 wherein the secondary film deposited is tungsten boride. 8. The method of claim 5 wherein the precursor gas for the deposition of the primary films comprises a volatile tungsten chloride. 9. The method of claim 5 wherein the deposition process is conducted at a total pressure greater than 700 Pa and less than 33,000 Pa. 10. The method of claim 5 wherein the thickness of the deposited primary films of tungsten is between 10 and 1000 nanometers. 11. The method of claim 5 wherein the thickness of the deposited primary films of tungsten do not exceed 100 nm. 12. The method of claim 2 wherein the thickness of the secondary film is at least 1 nm. 13. The method of claim 2 wher ein the alloy comprises a coating or a body having a surface finish (Ra) better than 250 nm. 14. The method of claim 2 wherein the alloy comprises a coating or a body and the method further comprises the step of finishing the exterior surface of the coating or body by electro-polishing, electro-chemical grinding, or chemical-mechanical finishing. 15. The method of claim 2 further comprising the step of removing the adherent array of thin film deposits from the mandrel, mechanically, thermochemically, or by chemical dissolution for the purpose of creating a free-standing body.
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