초록 ▼

A method and apparatus for reducing or eliminating the formation of air pockets or voids in a flowable material provided in contact with at least one substrate. The flowable material is provided in a non-horizontal direction and flows from a lower portion to an upper portion. As a result, the flowab

A method and apparatus for reducing or eliminating the formation of air pockets or voids in a flowable material provided in contact with at least one substrate. The flowable material is provided in a non-horizontal direction and flows from a lower portion to an upper portion. As a result, the flowable material is provided uniformly with a single, uniform flow front due to gravity acting thereon and gravity thereby substantially preventing voids and air pockets from forming in the flowable material. In one embodiment, the at least one substrate is provided in the cavity of a transfer mold in which the cavity is filled from a gate at a lower portion of the cavity to a vent at an upper portion of the cavity. In another embodiment, a bumped semiconductor device is attached to a substrate having a gap therebetween, in which the gap is oriented longitudinally perpendicular to a horizontal plane so that the flowable material may fill the gap in a vertical direction.

대표청구항 ▼

1. A method of molding a semiconductor assembly comprising:providing a transfer mold having an inner surface defining at least one mold cavity;providing an assembly including at least one semiconductor device attached face down to a carrier substrate with conductive structures providing an assembly

1. A method of molding a semiconductor assembly comprising:providing a transfer mold having an inner surface defining at least one mold cavity;providing an assembly including at least one semiconductor device attached face down to a carrier substrate with conductive structures providing an assembly gap therebetween;positioning the assembly in the at least one mold cavity of the transfer mold so that the carrier substrate abuts with a first inner surface of the transfer mold to provide an outer gap between a back surface of the at least one semiconductor device and an opposing second inner surface of the transfer mold; andintroducing a flowable material onto at least one surface of the assembly to flow through the assembly gap and the outer gap in an upward, substantially vertical direction in the at least one mold cavity. 2. The method according to claim 1, wherein the providing the transfer mold comprises configuring the transfer mold so that the at least one mold cavity is substantially vertically oriented with at least one gate at a lower portion of the at least one mold cavity and at least one vent at an upper portion of the at least one mold cavity. 3. The method according to claim 2, wherein the introducing the flowable material comprises:substantially filling the at least one mold cavity in the upward, substantially vertical direction. 4. The method according to claim 3, wherein the substantially filling the at least one mold cavity comprises:introducing the flowable material through the at least one gate until a single flow front of the flowable material contacts the at least one vent. 5. The method according to claim 2, wherein the positioning the assembly further comprises:positioning the assembly substantially vertically. 6. The method according to claim 5, wherein the introducing the flowable material comprises:filling the at least one mold cavity until a single flow front of the flowable material contacts the at least one vent. 7. The method according to claim 6, wherein the filling the at least one mold cavity with the flowable material comprises:encapsulating the assembly so that the flowable material fills the assembly gap and the outer gap. 8. The method according to claim 1, wherein the introducing the flowable material in the upward, substantially vertical direction comprises:inducing a substantially uniform flow front. 9. The method according to claim 1, wherein the introducing the flowable material comprises introducing the flowable material to flow substantially across the at least one surface of the assembly. 10. The method according to claim 1, wherein the introducing the flowable material onto the at least one surface of the assembly in the upward, substantially vertical direction comprises substantially preventing voids in the flowable material. 11. The method according to claim 1, wherein the providing the assembly comprises:providing the assembly with the at least one semiconductor device connected to an interposer. 12. The method according to claim 1, wherein the introducing the flowable material comprises:introducing the flowable material to flow between the at least one semiconductor device and the carrier substrate. 13. The method according to claim 1, wherein the providing the assembly comprises:providing at least one individual semiconductor die. 14. The method according to claim 1, wherein the providing the assembly comprises:providing a large-scale substrate including a plurality of semiconductor devices attached face down thereto. 15. The method according to claim 14, wherein the providing the large-scale substrate comprises:providing the large-scale substrate having the conductive structures protruding from bond pads of the plurality of semiconductor devices. 16. The method according to claim 1, wherein the introducing the flowable material includes capillary action on the flowable material. 17. The method according to claim 1, wherein the introducing the flowable material includes positi ve pressure on the flowable material. 18. The method according to claim 1, wherein the introducing the flowable material includes negative pressure on the flowable material. 19. A method for transfer molding a semiconductor assembly comprising:providing at least one transfer mold having an inner surface defining at least one cavity, the at least one transfer mold including at least one gate at a lower portion thereof and at least one vent at an upper portion thereof;providing an assembly including at least one semiconductor device attached face down to a carrier substrate with conductive structures providing an assembly gap therebetween;positioning the assembly in the at least one cavity of the at least one transfer mold so that the carrier substrate abuts with a first inner surface of the at least one transfer mold to provide an outer gap between a back surface of the at least one semiconductor device and an opposing second inner surface of the at least one transfer mold; andintroducing a resin material into the at least one cavity through the at least one gate so that the resin material moves upwardly over the assembly and through the assembly gap and the outer gap in a non-horizontal direction. 20. The method according to claim 19, comprising:removing substantially all gas from within the at least one cavity through the at least one vent during the introducing the resin material. 21. The method according to claim 19, wherein the introducing the resin material comprises:at least partially encapsulating the assembly. 22. The method according to claim 19, wherein the providing the at least one transfer mold comprises:providing the at least one transfer mold with the at least one cavity being oriented non-horizontally with at least one gate at a lower portion of the transfer mold at least one cavity and at least one vent at an upper portion of the transfer mold at least one cavity. 23. The method according to claim 19, wherein the providing the at least one transfer mold comprises:providing the at least one transfer mold with the at least one cavity being substantially vertically oriented with at least one gate at a lower portion of the transfer mold at least one mold cavity and at least one vent at an upper portion of the transfer mold at least one mold cavity. 24. The method according to claim 19, wherein the introducing the resin material includes a single, substantially uniform flow front around the assembly. 25. The method according to claim 19, wherein the introducing the resin material includes introducing the resin material until a single, substantially uniform flow front of the resin material contacts the at least one vent at the upper portion of the at least one transfer mold. 26. The method according to claim 19, wherein the providing the assembly comprises:providing a flip-chip type semiconductor device. 27. The method according to claim 19, wherein the introducing the resin material comprises:introducing the resin material to flow between the at least one semiconductor device and the carrier substrate. 28. The method according to claim 27, wherein the introducing the resin material further comprises:at least partially encapsulating at least one of the at least one semiconductor device and the carrier substrate.