초록

A method and system of voltage compensated integrated circuits. Operating characteristics of integrated circuitry are enhanced by application of voltage compensation.

대표청구항 ▼

1. An integrated circuit comprising:a first stage comprising first transistor devices comprising a first threshold voltage;a first feedback stage comprising transistor devices comprising a first plurality of threshold voltages, wherein at least one of said first plurality of threshold voltages is di

1. An integrated circuit comprising:a first stage comprising first transistor devices comprising a first threshold voltage;a first feedback stage comprising transistor devices comprising a first plurality of threshold voltages, wherein at least one of said first plurality of threshold voltages is different from said first threshold voltage, wherein said first feedback stage is coupled to said first stage in a feedback configuration;wherein said first feedback stage comprises a frequency-voltage characteristic that, when combined in opposition with a frequency-voltage characteristic of said first stage, produces a frequency-voltage characteristic of said integrated circuit that is more stable with respect to voltage over a range of frequencies than is said first stage;wherein said feedback configuration comprises an output of said first stage driving an input of said first feedback stage and output of said first feedback stage driving an input of said first stage; andwherein said first feedback stage comprises a second feedback stage, said second feedback stage comprising:transistor devices comprising a second plurality of threshold voltages, wherein at least one of said second plurality of threshold voltages is different from one of said first plurality of threshold voltages; andwherein said second feedback stage is coupled to said first feedback stage in a feedback configuration. 2. The integrated circuit of claim 1 wherein said first stage, said first feedback stage and said second feedback stage comprise an inverter stage. 3. The integrated circuit of claim 1 comprising at least three transistor devices, each transistor having different gate thicknesses. 4. The integrated circuit of claim 1 embodied within a microprocessor. 5. The integrated circuit of claim 4 embodied within a computer system.