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An electrically insulative layer of a shape memory alloy (SMA) actuator includes an inorganic material formed upon a portion of an SMA substrate. A conductive material formed upon a portion of the electrically insulative layer in a trace pattern includes a first end, a second end, and a heating elem

An electrically insulative layer of a shape memory alloy (SMA) actuator includes an inorganic material formed upon a portion of an SMA substrate. A conductive material formed upon a portion of the electrically insulative layer in a trace pattern includes a first end, a second end, and a heating element disposed between the first and second ends. The SMA substrate is trained to deform at a transition temperature achieved when electricity is conducted through the conductive material via first and second interconnect pads terminating the first and second ends of the trace pattern.

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1. An elongated medical device adapted for controlled deformation by means of one or more actuators, the one or more actuators comprising:a shape memory alloy (SMA) substrate including a surface and a groove formed upon the surface establishing a trace pattern;an electrically insulative layer formed

1. An elongated medical device adapted for controlled deformation by means of one or more actuators, the one or more actuators comprising:a shape memory alloy (SMA) substrate including a surface and a groove formed upon the surface establishing a trace pattern;an electrically insulative layer formed upon a portion of the surface of the SMA substrate, which includes the groove; the insulative layer including an inorganic material;a conductive material formed upon the electrically insulative layer according to the trace pattern and including a first end, a second end, and a heating element disposed between the first end and the second end;a first interconnect pad terminating the first end of the trace pattern; anda second interconnect pad terminating the second end of the trace pattern;wherein the SMA substrate is trained to deform at a transition temperature achieved when electricity is conducted through the conductive material via the first and second interconnect pads. 2. The medical device of claim 1, wherein the electrically insulative layer further includes an organic material. 3. The medical device of claim 1, wherein the inorganic material comprises an oxide. 4. The medical device of claim 3, wherein the SMA substrate comprises Nitinol and the inorganic material comprises a native oxide of Nitinol. 5. The medical device of claim 1, wherein the inorganic material comprises a nitride. 6. The medical device of claim 5, wherein the nitride is selected from the group consisting of boron nitride, silicon nitride, and aluminum nitride. 7. The medical device of claim 1, wherein the inorganic material comprises carbide. 8. The medical device of claim 1, wherein a thickness of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is between approximately 0.5 micrometer and approximately 1 micrometer. 9. The medical device of claim 1, wherein a thickness of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is less than approximately 0.5 micrometer. 10. The medical device of claim 1, wherein a dielectric strength of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is sufficient for an applied operating voltage greater than approximately 100V. 11. The medical device of claim 1, wherein a dielectric strength of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is sufficient for an applied operating voltage greater than approximately 10V. 12. The medical device of claim 1, wherein a dielectric strength of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is sufficient for an applied operating voltage between approximately 1V and approximately 10V. 13. A method for manufacturing a shape memory alloy (SMA) actuator, comprising:forming an electrically insulative layer including an inorganic material on a surface of an SMA substrate;forming a conductive material on a portion of the insulating layer in a trace pattern; andforming a groove on the surface of the SMA substrate to establish a portion of the trace pattern in the SMA substrate prior to formation of the insulative layer. 14. A method for manufacturing a shape memory alloy (SMA) actuator, comprising:forming an electrically insulative layer including an inorganic material on a surface of an SMA substrate; andforming a conductive material on a portion of the insulating layer in a trace pattern;wherein means for forming the insulative layer includes a vacuum deposition method. 15. The method of claim 13, wherein means for forming the insulative layer is selected from the group consisting of printing and coating. 16. The method of claim 13, wherein the inorganic material comprises an oxide. 17. The method of claim 16, wherein the oxide is a native oxide and means for forming the insulativ e layer is selected from the group consisting of electrochemically forming the native oxide, chemically forming the native oxide and thermally forming the native oxide. 18. The method of claim 13, wherein the inorganic material comprises a nitride. 19. The method of claim 18, wherein the nitride is selected from the group consisting of boron nitride, silicon nitride, and aluminum nitride. 20. The method of claim 13, wherein the inorganic material comprises carbide. 21. A shape memory alloy (SMA) actuator comprising:an SMA substrate including a surface and a groove formed upon the surface establishing a trace pattern;an electrically insulative layer formed upon a portion of the surface of the SMA substrate, which includes the groove; the insulative layer including an inorganic material;a conductive material formed upon the electrically insulative layer according to the trace pattern and including a first end, a second end, and a heating element disposed between the first end and the second end;a first interconnect pad terminating the first end of the trace pattern; anda second interconnect pad terminating the second end of the trace pattern;wherein the SMA substrate is trained to deform at a transition temperature achieved when electricity is conducted through the conductive material via the first and second interconnect pads. 22. The SMA actuator of claim 21, wherein the electrically insulative layer further includes an organic material. 23. The SMA actuator of claim 21, wherein the electrically insulative layer comprises an oxide. 24. The SMA actuator of claim 23, wherein the SMA substrate comprises Nitinol and the electrically insulative layer comprises a native oxide of Nitinol. 25. The SMA actuator of claim 21, wherein the electrically insulative layer comprises a nitride. 26. The SMA actuator of claim 25, wherein the nitride is selected from the group consisting of boron nitride, silicon nitride, and aluminum nitride. 27. The SMA actuator of claim 21, wherein the electrically insulative layer comprises carbide. 28. The SMA actuator of claim 21, wherein a thickness of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is between approximately 0.5 micrometer and approximately 1 micrometer. 29. The SMA actuator of claim 21, wherein a thickness of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is less than approximately 0.5 micrometer. 30. The SMA actuator of claim 21, wherein a dielectric strength of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is sufficient for an applied operating voltage greater than approximately 100V. 31. The SMA actuator of claim 21, wherein a dielectric strength of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is sufficient for an applied operating voltage greater than approximately 10V. 32. The SMA actuator of claim 21, wherein a dielectric strength of the portion of the electrically insulative layer over which the trace pattern of conductive material is formed is sufficient for an applied operating voltage between approximately 1V and approximately 10V. 33. The method of claim 14, wherein the inorganic material comprises an oxide. 34. The method of claim 14, wherein the inorganic material comprises a nitride. 35. The method of claim 34, wherein the nitride is selected from the group insisting of boron nitride, silicon nitride and aluminum nitride. 36. The method of claim 14, wherein the inorganic material comprises a carbide. 37. A method for manufacturing a shape memory alloy (SMA) actuator, comprising:forming an electrically insulative layer including a native oxide on a surface of an SMA substrate; andforming a conductive material on a portion of the insulating layer in a trace pattern;wherein means for forming the electrically insulative layer i s selected from the group consisting of electrochemically forming the native oxide, chemically forming the native oxide and thermally forming the native oxide.