초록 ▼

A white-light LED with omni-directional reflectors includes an LED chip for emitting white-light. A light transmitting material surrounding the LED and phosphor grains is dispersed in order to excite fluorescence via emission of LED. Two omni-directional reflectors are implemented on the top and/or

A white-light LED with omni-directional reflectors includes an LED chip for emitting white-light. A light transmitting material surrounding the LED and phosphor grains is dispersed in order to excite fluorescence via emission of LED. Two omni-directional reflectors are implemented on the top and/or bottom of the LED symmetrically surrounding the light transmitting material and the LED chip. The light from the LED was reflected omni-directionally, via the dielectric omni-directional reflectors, to increasing the efficiency and/or spectral characteristics and uniformity of the visible light emission.

대표청구항 ▼

1. A white-light light-emitting diode (LED) with dielectric omni-directional reflectors, comprising:an LED chip for emitting white-light through an outgoing surface;a light transmitting material surrounding the LED chip and a plurality of phosphor grains being dispersed to excite fluorescence via em

1. A white-light light-emitting diode (LED) with dielectric omni-directional reflectors, comprising:an LED chip for emitting white-light through an outgoing surface;a light transmitting material surrounding the LED chip and a plurality of phosphor grains being dispersed to excite fluorescence via emission of the LED chip; andtwo omni-directional reflectors placed on the top and bottom of the LED chip which is surrounded by the light transmitting material, the one facing the outgoing surface being a front dielectric omni-directional reflector and the other being a rear omni-directional reflector;wherein light emitted from the LED chip reflected omni-directionally, via the omni-directional reflectors. 2. The white-light LED of claim 1, wherein the LED chip is selected from the group consisting of UV LED chip and blue LED chip. 3. The white-light LED of claim 1, wherein a light outgoing surface of the LED chip is installed with a short wave pass filter to increase the outgoing flux of the LED chip. 4. The white-light LED of claim 1, wherein the visible-light spectrum of the phosphor grains has to be compatible with the wavelength of the LED chip. 5. The white-light LED of claim 1, wherein the front dielectric omni-directional reflector is formed by coating a multi-layer dielectric stack structure with alternately high and low refractive index. 6. The white-light LED of claim 5, wherein the material of the multi-layer dielectric stack is selected from one or more member(s) of the group consisting of SiO 2 /Al 2 O 3 , TiO 2 /SiO 2 , and Ta 2 O 3 /SiO 2 . 7. The white-light LED of claim 1, wherein the light viewing side surface of glass plate where the front dielectric omni-directional reflector coated is selected from the group consisting of a diffractive optical element (DOE) total internal reflection (TIR) lens, dome lens, non-imaging Fresnel lens, microlens, microlens array, a diffuser, and an anti-reflection (AR) coating. 8. The white-light LED of claim 1, wherein the front dielectric omni-directional reflector is a dielectric stack of optical thin-film coating layers. 9. The white-light LED of claim 1, wherein the manufacturing method of the front dielectric omni-directional reflector is selected from the group consisting of self-assembly, sol-gel deposition process by spin coating, dipping, sputtering, E-gun deposition, and chemical vapor deposition (CVD). 10. The white-light LED of claim 1, wherein the rear omni-directional reflector is selected from the group consisting of a metal thin-film coating and a visible/UV mirror. 11. The white-light LED of claim 1, wherein the rear omni-directional reflector is formed by coating a multi-layer dielectric stack structure with alternately high and low refractive index. 12. The white-light LED of claim 11, wherein the material of the multi-layer dielectric stack is selected from one or more member(s) of the group consisting of SiO 2 /Al 2 O 3 , TiO 2 /SiO 2 , and Ta 2 O 3 /SiO 2 . 13. The white-light LED of claim 1, wherein the manufacturing method of the rear-dielectric omni-directional reflector is selected from the group consisting of self-assembly, sol-gel deposition process by spin coating, dipping sputtering, E-gun, and chemical vapor deposition (CVD). 14. A white-light light-emitting diode (LED) with dielectric omni-directional reflectors, comprising:a plurality of LED chips for emitting white-light through an outgoing surface;a light transmitting material surrounding the LED chip and a plurality of phosphor grains being dispersed to excite fluorescence via emission of the LED chip; andtwo omni-directional reflectors on the top and bottom of the LED chip, which is surrounded by the light transmitting material, the one facing the outgoing surface being a front dielectric omni-directional reflector and the other being a rear omni-directional reflector, and the top of the rear omni-directional reflector being covered with a transparent electrode layer to form a ci rcuit;wherein light emitted from the LED chip is reflected omni-directionally, via the omni-directional reflectors. 15. The white-light LED of claim 14, wherein the LED chip is selected from the group consisting of UV LED chip and blue LED chip. 16. The white-light LED of claim 14, wherein a light outgoing surface of the LED chip is installed with a short wave pass filter to increase the outgoing flux of the LED chip. 17. The white-light LED of claim 14, wherein the visible-light spectrum of the phosphor grains has to be compatible with the desired wavelength of the LED chip. 18. The white-light LED of claim 14, wherein the front dielectric omni-directional reflector is formed by coating a multi-layer dielectric stack structure with alternately high and low refractive index. 19. The white-light LED of claim 18, wherein the material of the multi-layer dielectric stack is selected from one or more member(s) of the group consisting of SiO 2 /Al 2 O 3 , TiO 2 /SiO 2 , and Ta 2 O 3 /SiO 2 . 20. The white-light LED of claim 14, wherein the light viewing side surface of glass plate where the front dielectric omni-directional reflector coated is selected from the group consisting of a diffractive optical element (DOE) total internal reflection (TIR) lens, dome lens, non-imaging Fresnel lens, microlens, microlens array, a diffuser, and an anti-reflection (AR) coating. 21. The white-light LED of claim 14, wherein the front dielectric omni-directional reflector is a dielectric stack of optical thin-film coating layers. 22. The white-light LED of claim 14, wherein the manufacturing method of the front dielectric omni-directional reflector is selected from the group consisting of self-assembly, sol-gel deposition process by spin coating, dipping, sputtering, E-gun deposition, and chemical vapor deposition (CVD). 23. The white-light LED of claim 14, wherein the rear omni-directional reflector is selected from the group consisting of a metal thin-film coating and a visible/UV mirror. 24. The white-light LED of claim 14, wherein the rear omni-directional reflector is formed by coating a multi-layer dielectric stack structure with alternately high and low refractive index. 25. The white-light LED of claim 24, wherein the material of the multi-layer dielectric stack is selected from one or more member(s) of the group consisting of SiO 2 /Al 2 O 3 , TiO 2 /SiO 2 , and Ta 2 O 3 /SiO 2 . 26. The white-light LED of claim 14, wherein the manufacturing method of the rear omni-directional reflector is selected from the group consisting of self-assembly, sol-gel deposition process by spin coating, dipping sputtering, E-gun, and chemical vapor deposition (CVD). 27. The white-light LED of claim 14, wherein the transparent electrode layer is ITO. 28. A white-light LED with dielectric omni-directional reflectors comprising: an LED chip installed in a supporting body having an upper surface with a depression having an opening in the upper surface for emitting white-light, a light transmitting material surrounding the LED and a plurality of phosphor grains being dispersed to excite fluorescence via light emission of the LED chip through the light transmitting material, wherein the white-light LED is characterized in that: the surface of the light transmitting material having an dielectric omni-directional reflector to reflect the light from the LED chip omni-directionally irrespective of polarization. 29. The white-light LED of claim 28, wherein the LED chip is selected from the group consisting of an UV LED chip and a blue LED chip. 30. The white-light LED of claim 28, wherein the visible-light spectrum of the phosphor grains has to be compatible with the desired wavelength of the LED chip. 31. The white-light LED of claim 28, wherein the dielectric omni-directional reflector is a dielectric optical thin-film coating. 32. The white-light LED of claim 28, wherein the dielectric omni-directional reflector is formed by coating a multi-layer die lectric stack structure with alternately high and low refractive index. 33. The white-light LED of claim 32, wherein the material of the multi-layer dielectric stack is selected one or more member(s) of the group consisting of SiO 2 /Al 2 O 3 , TiO 2 /SiO 2 , and Ta 2 O 3 /SiO 2 .