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Method for forming a double-gated semiconductor device

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-02100
  • H01L-02120
  • H01L-0213205
출원번호 US-0427577 (2003-05-01)
발명자 / 주소
  • Pham, Daniel T.
  • Barr, Alexander L.
  • Mathew, Leo
  • Nguyen, Bich-Yen
  • Vandooren, Anne M.
  • White, Ted R.
출원인 / 주소
  • Freescale Semiconductor, Inc.
인용정보 피인용 횟수 : 149  인용 특허 : 10

초록

A method for forming a polysilicon FinFET (10) or other thin film transistor structure includes forming an insulative layer (12) over a semiconductor substrate (14). An amorphous silicon layer (32) forms over the insulative layer (12). A silicon germanium seed layer (44) forms in association with th

대표청구항

1. A method for forming a double-gated transistor, comprising the steps of:forming an insulative layer over a substrate; forming an amorphous silicon layer over said insulative layer for producing a polysilicon layer; forming a silicon germanium seed layer associated with said amorphous silicon laye

이 특허에 인용된 특허 (10)

  1. Gambino, Jeffrey P.; Lasky, Jerome B.; Rankin, Jed H., Fin field effect transistor with self-aligned gate.
  2. Chenming Hu ; Tsu-Jae King ; Vivek Subramanian ; Leland Chang ; Xuejue Huang ; Yang-Kyu Choi ; Jakub Tadeusz Kedzierski ; Nick Lindert ; Jeffrey Bokor ; Wen-Chin Lee, Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture.
  3. Kim Jeong Hyun,KRX ; Oh Eui Yeol,KRX, Method of depositing an amorphous silicon film by APCVD.
  4. Chun Hung Lin TW, Method of molding semiconductor device and molding die for use therein.
  5. Thakur Randhir P. S. (Boise ID), Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal.
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  7. Zoran Krivokapic ; Matthew Buynoski, Self-aligned double gate silicon-on-insulator (SOI) device.
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  9. Inaba, Satoshi; Ohuchi, Kazuya, Semiconductor device having MIS field effect transistors or three-dimensional structure.
  10. King Tsu-Jae ; Ho Jackson H., Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates.

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AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트