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특허 상세정보

Memory device with active passive layers

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-027108    H01L-031119   
미국특허분류(USC) 257/296; 257/288
출원번호 US-0413841 (2003-04-15)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Amin &
인용정보 피인용 횟수 : 96  인용 특허 : 72
초록

A memory including memory cells having active and passive layers may store multiple information bits. The active layer may include an organic polymer that has a variable resistance based on the movement of charged species (ions or ions and electrons) between the passive layer and the active layer. The passive layer may be a super-ionic material that has high ion and electron mobility. The active layer may be self-assembled from a monomer in a liquid or gas.

대표
청구항

1. A reversibly programmable memory comprising at least one memory cell, the at least one memory cell comprising:a first conductive electrode layer; a passive layer formed over the first conductive electrode layer, the passive layer comprising a super-ionic material comprising copper sulfide adapted to reversibly donate and accept charged species, the charged species comprising ions or ions and electrons; an active layer formed over the passive layer, the active layer comprising an organic polymer that has a reversibly variable electrical conductivity up...

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