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A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive structures are embedded in the foam

A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive structures are embedded in the foamed polymer layer. An insulator is formed by forming a polymer layer having a thickness on a substrate. The polymer layer is foamed to form a foamed polymer layer having a surface and a foamed polymer layer thickness, which is greater than the polymer layer thickness. The surface of the foamed polymer layer is treated to make the surface hydrophobic.

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1. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed polymer layers on the substrate, each of the stacked foamed polymer layers has a surface that is hydrophobic, and each of the foamed polymer layers has a cell size less than about one micron; and a plurality of

1. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed polymer layers on the substrate, each of the stacked foamed polymer layers has a surface that is hydrophobic, and each of the foamed polymer layers has a cell size less than about one micron; and a plurality of conductive structures embedded in each of the plurality of foamed polymer layers. 2. The integrated circuit structure of claim 1, wherein a minimum distance between the plurality of conductive structures has a value, and the cell size is less than the value.3. The integrated circuit structure of claim 1, wherein the cell size is less than about 0.1 micron.4. The integrated circuit structure of claim 1, wherein each of the plurality of stacked foamed polymer layers is fabricated from polyimide.5. The integrated circuit structure of claim 1, wherein each of the plurality of conductive structures is fabricated from an aluminum alloy.6. The integrated circuit structure of claim 1, wherein each of the plurality of conductive structures is fabricated from a copper alloy.7. An integrated circuit structure comprising:a substrate; a foamed material layer on the substrate, the foamed material layer having a surface that is hydrophobic; and a plurality of conductive structures embedded in the foamed material layer. 8. The integrated circuit structure of claim 7, wherein the foamed material layer is a foamed fluro-polymer layer.9. The integrated circuit structure of claim 7, wherein the foamed material layer is a foamed parylene layer.10. The integrated circuit structure of claim 7, wherein the foamed material layer is a foamed aerogel layer.11. The integrated circuit structure of claim 7, wherein the foamed material layer is a foamed polymer layer.12. The integrated circuit structure of claim 7, wherein the foamed material layer has a dielectric constant between about 0.9 and about 1.8.13. An integrated circuit structure comprising:a substrate; a foamed material layer on the substrate, the foamed material layer having a surface that is hydrophobic; and a plurality of conductive structures embedded in the foamed material layer, wherein the foamed material layer has a plurality of cells with an average cell size less than about 1 micron. 14. An integrated circuit structure comprising:a substrate; a foamed material layer on the substrate, the foamed material layer having surface that is hydrophobic; and a plurality of conductive structures embedded in the foamed material layer, wherein the foamed material layer has a plurality of cells with an average cell size less than about 0.1 micron. 15. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed aerogel layers on the substrate, each of the stacked foamed aerogel layers having a surface that is hydrophobic; and a plurality of conductive structures embedded in each of the plurality of foam aerogel layers. 16. The integrated circuit structure of claim 15, wherein the foamed aerogel layers have a thickness between about 1.8 microns and about 2.4 microns.17. The integrated circuit structures of claim 15, wherein the plurality of conductive structures include a metal selected from a group consisting of silver, aluminum, gold, copper, and tungsten.18. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed polyimide layers on the substrate, each of the stacked foamed polyimide layers having a surface that is hydrophobic; and a plurality of conductive structures embedded in each of the plurality of foamed polyimide layers. 19. The integrated circuit structure of claim 18, wherein the foamed polyimide layers have a thickness between about 1.8 microns and about 2.4 microns.20. The integrated circuit structure of claim 18, wherein the plurality of conductive structures include a metal selected from a group consisting of alloys of silver, aluminum, gold, copper, and tungsten.21. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed polyimide layers on the substrate, each of the stacked foamed polymer layers having a surface that is hydrophobic; and a plurality of conductive structures embedded in each of the plurality of foamed polymer layers, wherein the foamed polyimide layers are foamed polyimide layers containing silane. 22. An integrated circuit structure comprising:a substrate; a plurality of electronic devices on the substrate; and an air-bridge structure coupling two of the electronic devices, the air-bridge structure having a surface that is hydrophobic. 23. The integrated circuit structure of claim 22, wherein the air-bridge structure includes a metal selected from a group consisting of alloys of silver, aluminum, gold, copper, and tungsten.24. The integrated circuit structure of claim 22, wherein the air-bridge structure includes a metal selected from a group consisting of silver, aluminum, gold, copper, and tungsten.25. An integrated circuit structure comprising:a substrate; a foamed material layer on the substrate, the foamed material layer having a surface that is hydrophobic; and a plurality of conductive structures embedded in the foamed material layer; the foamed material layer formed by exposing an unfoamed material layer to a supercritical fluid to form the foamed material layer. 26. The integrated circuit structure of claim 25, wherein the supercritical fluid is CO2.27. The integrated circuit structure of claim 25, wherein the unfoamed material layer is subjected to a low temperature bake before forming the foamed material layer.28. The integrated circuit structure of claim 25, wherein exposing an unfoamed material layer to a supercritical fluid further includes depressurizing at a rate such that the unfoamed material layer converts to the foamed material layer before substantial diffusion of the supercritical fluid out of the unfoamed material layer.29. The integrated circuit structure of claim 25, wherein the supercritical fluid is selected from a group consisting of NH3, NR3, ROH, H2O, CO2, N2O, He, Ne, Ar, HF, HCl, HBr, BCl3, Cl2, F2, O2, N2, CH4, C2H6, C3H8, C3H4, CO(OCH3)2, CF4, CF2F4, CH3F, and C5H2F6O2.30. An integrated circuit structure comprising:a substrate; a foamed material layer on the substrate, the foamed material layer having a surface that is hydrophobic; and a plurality of conductive structures embedded in the foamed material layer; the surface of the foamed material layer formed hydrophobic by exposing the surface of the foamed material layer to a plurality of methane radicals. 31. The integrated circuit structure of claim 30, wherein the plurality of methane radicals is formed by passing methane gas through a plasma.32. The integrated circuit structure of claim 30, wherein the plurality of methane radicals is formed by using a high frequency electric field.33. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed polymer layers on the substrate, each of the stacked foamed polymer layers having a surface that is hydrophobic; and a plurality of conductive structures embedded in each of the plurality of foamed polymer layers; the foamed polymer layers having a hydrophobic surface being formed by exposing an unfoamed polymer layer to a supercritical fluid to form the foamed polymer layer, and exposing the surface of each foamed polymer layer to a plurality of methane radicals. 34. The integrated circuit structure of claim 33, wherein the supercritical fluid is CO2.35. The integrated circuit structure of claim 33, wherein each unfoamed polymer layer is cured before forming the foamed polymer layer.36. The integrated circuit structure of claim 35, wherein each unfoamed polymer layer is cured by adding a curing agent.37. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed aerogel layers on the substrate, each of the stacked foamed polymer layers having a surface that is hydrophobic; and a plurality of conductive structures embedded in each of the plurality of foamed polymer layers; the foamed polymer layers having a hydrophobic surface being formed by exposing an unfoamed polymer layer to a supercritical fluid to form the foamed polymer layer, and exposing the surface of each foamed polymer layer to a plurality of methane radicals, wherein each unfoamed polymer layer is a polymer layer containing silane. 38. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed aerogel layers on the substrate, each of the stacked foamed aerogel layers having a surface that is hydrophobic; a plurality of conductive structure embedded in each of the plurality of foamed aerogel layers; and the foamed aerogel layers having a hydrophobic surface being formed by exposing an unfoamed aerogel layer to a supercritical fluid to form the foamed aerogel layer, and exposing the surface of each foamed aerogel layer to a plurality of methane radicals. 39. The integrated circuit structure of claim 38, wherein the supercritical fluid is CO2.40. An integrated circuit structure comprising:a substrate; a plurality of stacked foamed aerogel layers on the substrate, each of the stacked foamed aerogel layers having a surface that is hydrophobic; a plurality of conductive structures embedded in each of the plurality of foam aerogel layers; and the foamed aerogel layers having a hydrophobic surface being formed by exposing an unfoamed aerogel layer to a supercritical fluid to form the foamed aerogel layer, and exposing the surface of each foamed aerogel layer to a plurality of methane radicals, wherein each foamed aerogel layer has a plurality of cells with an average cell size less than about 1 micron. 41. An integrated circuit structure comprising:a substrate; a plurality of electronic devices on the substrate; and an air-bridge structure coupling two of the electronic devices, the air-bridge structure having a surface that is hydrophobic; the surface of the air-bridge structure bein made hydrophobic by exposing the surface of the air bridge structure to a plurality of methane radicals. 42. The integrated circuit structure of claim 38, wherein the plurality of methane radicals is formed by passing methane gas through a plasma.43. The integrated circuit structure of claim 41, wherein the plurality of methane radicals is formed by passing methane gas through a plasma.44. The integrated circuit structure of claim 41, wherein the plurality of methane radicals is formed by using a high frequency electric field.45. The integrated circuit structure of claim 41, wherein the air-bridge structure includes a metal selected from a group consisting of alloys of silver, aluminum, gold, copper, and tungsten.46. The integrated circuit structure of claim 41, wherein the air-bridge structure includes a metal selected from a group consisting of silver, aluminum, gold, copper, and tungsten.