IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0088556
(2000-12-12)
|
우선권정보 |
KR-10-200-0041374 (2000-07-19) |
국제출원번호 |
PCT/KR00/01439
(2002-03-19)
|
§371/§102 date |
20020319
(20020319)
|
국제공개번호 |
WO02/06808
(2002-01-24)
|
발명자
/ 주소 |
- Lee, Don Hee
- Hong, Hyung Ki
|
출원인 / 주소 |
|
대리인 / 주소 |
Birch, Stewart, Kolasch &
|
인용정보 |
피인용 횟수 :
9 인용 특허 :
3 |
초록
▼
An absolute humidity sensor for a microwave oven is disclosed. The absolute humidity sensor includes a substrate having a first hole and a second hole in a predetermined region, a membrane formed on the substrate, a humidity sensing element formed on the membrane where the first hole is formed, for
An absolute humidity sensor for a microwave oven is disclosed. The absolute humidity sensor includes a substrate having a first hole and a second hole in a predetermined region, a membrane formed on the substrate, a humidity sensing element formed on the membrane where the first hole is formed, for detecting humidity exposed to the air, having a variable resistance value depending on the detected humidity, and a temperature compensating element formed on the membrane where the second hole is formed, for compensating for the resistance value of the humidity sensing element. For package, the absolute humidity sensor further includes a stem joined with a lower portion of the substrate, having pins for electrically connecting with the outside, and a hole to pass through external humidity, a wire for electrically connecting the electrode pads of the humidity sensing element and the temperature compensating element with the pins of the stem, and a metal shield case formed on an upper portion of the stem to cover an entire surface of the stem including the humidity sensing element and the temperature compensating element.
대표청구항
▼
1. An absolute humidity sensor comprising:a substrate having a cavity; a membrane formed on the substrate; a resistor formed on the membrane; electrode pads formed on the membrane, for electrically connecting with the resistor; a passivation film formed on an entire surface of the resistor to cover
1. An absolute humidity sensor comprising:a substrate having a cavity; a membrane formed on the substrate; a resistor formed on the membrane; electrode pads formed on the membrane, for electrically connecting with the resistor; a passivation film formed on an entire surface of the resistor to cover the resistor; and a thermal conductive film formed on a region of the passivation film where the resistor is formed. 2. The absolute humidity sensor of claim 1, wherein the membrane is formed of any one of SiO2, Si3N4, SiOxNy, and SiO2/Si3N4/SiO2.3. The absolute humidity sensor of claim 1, wherein the resistor is formed of one or more of Ti, Pt, Ni, Ni?Cr, and VO2.4. The absolute humidity sensor of claim 1, wherein the passivation film is formed of any one of SiO2, Si3N4, SiOxNy, phosphor silicate glass (PSG), and polyimide.5. The absolute humidity sensor of claim 1, wherein the thermal conductive film is formed of any one of Al and Au.6. An absolute humidity sensor comprising:A substrate having a first cavity and a second cavity in a predetermined region; a membrane formed on the substrate; a humidity sensing element formed on the membrane where the first cavity is formed, for detecting humidity exposed to the air, having a variable resistance value depending on the detected humidity; a temperature compensating element formed on the membrane where the second cavity is formed, for compensating for the resistance value of the humidity sensing element, and a thermal conductive film formed on a region of passivation film where a resistor is formed. 7. The absolute humidity sensor of claim 6, wherein the humidity sensing element and the temperature compensating element include:said resistor formed on the membrane; electrode pads formed on the membrane, for electrically connecting with the resistor; and said passivation film formed on an entire surface of the resistor to cover the resistor. 8. The absolute humidity sensor of claim 7, wherein the membrane is formed of any one of SiO2, Si3N4, SiOxNy, and SiO2/Si3N4/SiO2.9. The absolute humidity sensor of claim 7, wherein the resistor is formed of one or more of Ti, Pt, Ni, Ni?Cr, and VO2.10. The absolute humidity sensor of claim 7, wherein the passivation film is formed of any one of SiO2, Si3N4, SiOxNy, phosphor silicate glass (PSG), and polyimide.11. The absolute humidity sensor of claim 6, wherein the thermal conductive film is formed of any one of Al and Au.12. The absolute humidity sensor of claim 6, further comprising a cap formed over the humidity sen sing element and the temperature compensating element to cover the entire surfaces of the humidity sensing element and the temperature compensating element, for separating the humidity sensing element and the temperature compensating element from each other and sealing them therein.13. The absolute humidity sensor of claim 12, wherein a shielding film is formed in a central region of the cap to separate and seal the humidity sensing element and the temperature compensating element.14. The absolute humidity sensor of claim 12, wherein a hole is formed in a region of the cap, where the humidity sensing element is formed, to pass through external humidity.15. The absolute humidity sensor of claim 12, wherein the cap is made of silicon.16. The absolute humidity sensor of claim 6, further comprising:a stem joined with a lower portion of the substrate, having pins for electrically connecting with the outside; a wire for electrically connecting electrode pads of the humidity sensing element and the temperature compensating element with the pins of the stem; and a metal shield case formed on an upper portion of the stem to cover an entire surface of the stem including the humidity sensing element and the temperature compensating element. 17. The absolute humidity sensor of claim 16, wherein a hole is formed in a region of the stem, where the humidity sensing element is formed, to pass through external humidity.18. The absolute humidity sensor of claim 16, wherein a hole is formed in the shield case to pass through external humidity.
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