Methods of bonding two aluminum-comprising masses to one another
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B23K-00120
B23K-03102
C23C-01400
출원번호
US-0659867
(2000-09-12)
발명자
/ 주소
Kim, Jaeyeon
출원인 / 주소
Honeywell International Inc.
대리인 / 주소
Wells St. John P.S.
인용정보
피인용 횟수 :
22인용 특허 :
52
초록▼
The invention encompasses a method of bonding a first mass to a second mass. A first mass of first material and a second mass of second material are provided and joined in physical contact with one another. The first and second masses are then diffusion bonded to one another simultaneously with the
The invention encompasses a method of bonding a first mass to a second mass. A first mass of first material and a second mass of second material are provided and joined in physical contact with one another. The first and second masses are then diffusion bonded to one another simultaneously with the development of grains of the second material in the second mass. The diffusion bonding comprises solid state diffusion between the first mass and the second mass. A predominate portion of the developed grains in the second material have a maximum dimension of less than 100 microns. The invention also encompasses methods of forming a physical vapor deposition target bonded to a backing plate.
대표청구항▼
1. A method of bonding a first aluminum-comprising mass to a second aluminum-comprising mass, comprising:providing a first aluminum-comprising mass and a second aluminum-comprising mass, the first aluminum-comprising mass having a first surface and the second aluminum-comprising mass having a second
1. A method of bonding a first aluminum-comprising mass to a second aluminum-comprising mass, comprising:providing a first aluminum-comprising mass and a second aluminum-comprising mass, the first aluminum-comprising mass having a first surface and the second aluminum-comprising mass having a second surface; exposing at least one of the first and second surfaces to a mixture comprising HF and HNO3; after the exposing, physically contacting the first surface with the second surface; pressing the first and second mass together to bond the first mass to the second mass; and wherein the first and second aluminum-comprising masses correspond to a backing plate and a physical vapor deposition target, respectively, and wherein the pressing comprises: joining the target and backing plate in physical contact with one another; compressing the target and backing plate together under a load that progresses sequentially as follows: (1) the load is maintained of a first pressure of at least about 4 ksi for a time of at least about 20 seconds; (2) the load is increased by at least about 0.5 ksi to a second pressure; and (3) the load is maintained at the second pressure for at least about 20 seconds. 2. The method of claim 1 further comprising, after maintaining the load at the second pressure, reducing the load to a third pressure over a time of at least about 2 minutes, the third pressure being greater than the first pressure and less than the second pressure.3. The method of claim 1 wherein the first pressure is from about 8 ksi to about 10 ksi, and wherein the second pressure is from about 12 ksi to about 20 ksi; and wherein the third pressure is from about 10 ksi to about 15 ksi.4. The method of claim 1 wherein the first pressure is from about 4 ksi to about 10 ksi.5. The method of claim 1 wherein the first pressure is at least about 4 ksi.6. The method of claim 1 wherein the first pressure is from about 4 ksi to about 10 ksi, and wherein the second pressure is from greater than 4 ksi to about 30 ksi.7. The method of claim 1 wherein the first pressure is from about 8 ksi to about 10 ksi, and wherein the second pressure is from about 12 ksi to about 20 ksi.8. The method of claim 1 wherein the first aluminum-comprising mass consists essentially of aluminum; or consists essentially of aluminum with less than 10% of one or more elements selected from the group consisting of Si, Cu, Ge, Pb, Sn, Ag, Ga, Hf, Mg, Mn, Sc, Zn, B, Ba, Be, C, Ca, Cd, Ce, Co, Cr, Dy, Er, Fe, Gd, Ho, Ir, La, Lu, Mo, Nb, Nd, Ni, P, Pd, Pm, Pr, Pt, Pu, Rh, Ru, S, Sb, Se, Sm, Sr, Ta, Tb, Te, Ti, Tm, V, W, Y, Yb and Zr.9. The method of claim 1 wherein the second aluminum-comprising mass consists essentially of aluminum; or consists essentially of aluminum with less than 10% of one or more elements selected from the group consisting of Si, Cu, Ge, Pb, Sn, Ag, Ga, Hf, Mg, Mn, Sc, Zn, B, Ba, Be, C, Ca, Cd, Ce, Co, Cr, Dy, Er, Fe, Gd, Ho, Ir, La, Lu, Mo, Nb, Nd, Ni, P, Pd, Pm, Pr, Pt, Pu, Rh, Ru, S, Sb, Se, Sm, Sr, Ta, Tb, Te, Ti, Tm, V, W, Y, Yb and Zr.10. The method of claim 1 wherein the first aluminum-comprising mass is selected from the group consisting of 2000 Series, 3000 Series, 4000 Series, 5000 Series, 6000 Series and 7000 Series aluminum.11. The method of claim 1 wherein the first aluminum-comprising mass is 2000 Series aluminum which is thermally treated at a temperature of from about 250° C. to about 800° C. for a time of from about 10 minutes to about 1 week prior to the exposing.12. The method of claim 1 wherein the first aluminum-comprising mass is 2000 Series aluminum which is thermally treated at a temperature of from about 350° C. to about 400° C. for a time of from about 6 hours to about 12 hours prior to the exposing.13. The method of claim 1 wherein the second aluminum-comprising mass consists essentially of aluminum with one or more of copper and silicon; with the copper being greater than 0% of the mass and less than about 10% of the mass (by weight) and the silicon being less than about 10% of the mass (by weight).
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