IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0160738
(2002-05-31)
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발명자
/ 주소 |
- Dunbar, Timothy D.
- Zazzera, Lawrence A.
- Pellerite, Mark J.
- Boardman, Larry D.
- Moore, George G.
- Guerra, Miguel A.
- Elsbernd, Cheryl L.
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출원인 / 주소 |
- 3M Innovative Properties Company
|
인용정보 |
피인용 횟수 :
13 인용 특허 :
29 |
초록
Silicon substrates having Si?H bonds are chemically modified using a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1;n is an integer greater than or equal to 0;Z is a divalent linking group; andRf is a highly fluorinated organic group.
대표청구항
▼
1. A method for modifying a silicon substrate comprising:providing a silicon substrate having a plurality of Si?H bonds; providing a composition comprising: a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1, n is an integer greater than or equal to 0, Z is a
1. A method for modifying a silicon substrate comprising:providing a silicon substrate having a plurality of Si?H bonds; providing a composition comprising: a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1, n is an integer greater than or equal to 0, Z is a divalent linking group, Rf is a highly fluorinated organic group, and optional solvent; and contacting the composition with the silicon substrate under conditions such that the fluorinated olefin becomes covalently attached to the surface of the silicon substrate. 2. The method of claim 1, wherein m is in the range of from about 1 to about 20.3. The method of claim 1, wherein m is about 1.4. The method of claim 1, wherein n is in the range of from about 0 to about 20.5. The method of claim 1, wherein n is in the range of from about 0 to about 3.6. The method of claim 1, wherein Z is a covalent bond, ?O?, or wherein R1 is alkyl or H.7. The method of claim 1, wherein Z is ?O? or 8. The method of claim 1, wherein Rf contains fluorine in an amount of greater than or equal to at least 50 percent by weight.9. The method of claim 1, wherein Rf contains fluorine in an amount of greater than or equal to at least 60 percent by weight.10. The method of claim 1, wherein Rf comprises a perfluoroalkyl group having from about 4 to about 12 carbon atoms.11. The method of claim 1, wherein the fluorinated olefin comprises a poly(perfluoroalkyleneoxy) group.12. The method of claim 1, wherein the fluorinated olefin has the formula: 13. The method of claim 12, wherein the fluorinated olefin comprises a poly(perfluoroalkylenoxy) group.14. The method of claim 1, wherein the fluorinated olefin comprises a plurality of allyloxy groups.15. The method of claim 1, wherein the fluorinated olefin has the formula:Rf?CH2OCH2CH?CH2. 16. The method of claim 15, wherein Rf contains fluorine in an amount of greater than or equal to at least 50 percent by weight.17. The method of claim 15, wherein Rf contains fluorine in an amount of greater than or equal to at least 60 percent by weight.18. The method of claim 15, wherein Rf comprises a perfluoroalkyl group having from about 4 to about 12 carbon atoms.19. The method of claim 15, wherein the fluorinated olefin comprises a poly(perfluoroalkylenoxy) group.20. The method of claim 15, wherein the fluorinated olefin comprises a plurality of allyloxy groups.21. The method of claim 1, wherein the silicon substrate comprises a microelectromechanical systems device.22. The method of claim 1, wherein the silicon substrate comprises a microfluidic device.23. The method of claim 1, wherein the composition further comprises solvent having a boiling point of greater than or equal to about 180° C.24. The method of claim 1, wherein said conditions comprise a temperature in excess of about 180° C.25. The method of claim 1, wherein contacting the composition with the silicon substrate comprises contacting a fluorinated olefin vapor with the silicon substrate.26. The method of claim 1, wherein the composition further comprises at least one of a free-radical photoinitiator or a photocatalyst; and wherein said conditions comprise electromagnetic radiation.27. The method of claim 26, wherein the free-radical photoinitiator comprises 2-hydroxy-2-methyl-1-phenyl-1-propanone.28. An article comprising a chemically modified silicon substrate prepared according to a method comprising:providing a silicon substrate; etching the silicon substrate to form a plurality of Si?H bonds; providing a composition comprising: a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1, n is an integer greater than or equal to 0, Z is a divalent linking group, Rf is a highly fluorinated organic group, and optional solvent; and contacting the composition with the silicon substrate under conditions such that the fluorinated olefin becomes covalently attached to the silicon substrate. 29. The article of claim 28, wherein m is in the range of from about 1 to about 20.30. The article of claim 28, wherein m is about 1.31. The article of claim 28, wherein n is in the range of from about 0 to about 20.32. The article of claim 28, wherein n is in the range of from about 0 to about 3.33. The article of claim 28, wherein Z is a covalent bond, ?O?, or wherein R1 is alkyl or H.34. The article of claim 28, wherein Z is ?O?or 35. The article of claim 28, wherein Rf contains fluorine in an amount of greater than or equal to at least 50 percent by weight.36. The article of claim 28, wherein Rf contains fluorine in an amount of greater than or equal to at least 60 percent by weight.37. The article of claim 28, wherein Rf comprises a perfluoroalkyl group having from about 4 to about 12 carbon atoms.38. The article of claim 28, wherein the fluorinated olefin comprises a poly(perfluoroalkylenoxy) group.39. The article of claim 28, wherein the fluorinated olefin has the formula: 40. The article of claim 28, wherein the fluorinated olefin comprises a plurality of allyloxy groups.41. The article of claim 28, wherein the fluorinated olefin has the formula:Rf?CH2OCH2CH?CH2. 42. The article of claim 41, wherein Rf contains fluorine in an amount of greater than or equal to at least 50 percent by weight.43. The article of claim 41, wherein Rf contains fluorine in an amount of greater than or equal to at least 60 percent by weight.44. The article of claim 41, wherein Rf comprises a perfluoroalkyl group having from about 4 to about 12 carbon atoms.45. The article of claim 41, wherein the fluorinated olefin comprises a poly(perfluoroalkylenoxy) group.46. The article of claim 41, wherein the fluorinated olefin comprises a plurality of allyloxy groups.47. The article of claim 28, wherein the silicon substrate comprises a microelectromechanical systems device.48. The article of claim 28, wherein the silicon substrate comprises a microfluidic device.49. The article of claim 28, wherein the composition further comprises solvent having a boiling point of greater than or equal to about 180° C.50. The article of claim 28, wherein said conditions comprise a temperature in excess of about 180° C.51. The article of claim 28, wherein contacting the composition with the silicon substrate comprises contacting a fluorinated olefin vapor with the silicon substrate.52. The article of claim 28, wherein the composition further comprises at least one of a free-radical photoinitiator or a photocatalyst; and wherein said conditions comprise electromagnetic radiation.53. The article of claim 28, wherein the free-radical photoinitiator comprises 2-hydroxy-2-methyl-1-phenyl-1-propanone.
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